Mechanisms of interactions between atomic hydrogen and vacancies in the silicon crystal lattice

1996 ◽  
Vol 37 (1) ◽  
pp. 18-23
Author(s):  
V. M. Pinchuk ◽  
A. N. Nazarov ◽  
V. S. Lysenko ◽  
V. M. Kovalev
Keyword(s):  
Crystal Lattice ◽  
Atomic Hydrogen ◽  
Silicon Crystal

Thermal Donor Formation Affected by Strain Fields Induced by Imperfections of Silicon Crystal Lattice

1993 ◽  
Vol 103-105 ◽  
pp. 543-550
Author(s):  
I.I. Kolkovskii ◽  
P.F. Lugakov ◽  
V.V. Lukyanitsa ◽  
A.V. Tsikunov
Keyword(s):  
Crystal Lattice ◽  
Silicon Crystal ◽  
Strain Fields ◽  
Thermal Donor ◽  
Donor Formation

scholarly journals Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon

2021 ◽  
Vol 24 (3) ◽  
pp. 255-260
Author(s):  
K.А. Ismailov ◽  
◽  
X.M. Iliev ◽  
M.O. Tursunov ◽  
B.K. Ismaylov ◽  
...  
Keyword(s):  
Complex Formation ◽  
Crystal Lattice ◽  
Silicon Crystal ◽  
Covalent Bond ◽  
Group Vi ◽  
Impurity Atoms ◽  
Unit Cells ◽  
Formation Of Complexes

Formation of complexes of impurity Mn atoms with impurity atoms of group VI elements (S, Se, Te) in the silicon crystal lattice has been studied. It has been experimentally found that formation of electrically neutral molecules with an ionic-covalent bond between Mn atoms and group VI elements takes place, which possibly leads to formation of new Si2BVI++Mn binary unit cells in the silicon crystal lattice. It has been shown that in the samples Si<S, Mn>, Si<Se, Mn> and Si<Te, Mn>, an intense complex formation occurs at the temperatures 1100, 820 and 650°C, respectively.

Adsorption states and adsorption kinetics of atomic hydrogen on silicon crystal surfaces

1985 ◽  
Vol 149 (2-3) ◽  
pp. 537-557 ◽  
Author(s):  
H. Froitzheim ◽  
U. Köhler ◽  
H. Lammering
Keyword(s):  
Adsorption Kinetics ◽  
Atomic Hydrogen ◽  
Silicon Crystal ◽  
Crystal Surfaces ◽  
Kinetics Of

Study on Influence of Silicon Crystal Dislocation on Removal in Atmospheric Pressure Plasma Polishing

2016 ◽  
Vol 878 ◽  
pp. 83-88 ◽  
Author(s):  
Guang Lu Jia ◽  
Bing Li ◽  
Ju Fan Zhang
Keyword(s):  
Dislocation Density ◽  
Crystal Lattice ◽  
Dislocation Structure ◽  
Edge Dislocation ◽  
Atmospheric Pressure ◽  
Silicon Crystal ◽  
Atmospheric Pressure Plasma ◽  
Perfect Crystal ◽  
Pressure Plasma ◽  
Quantum Chemistry Simulation

Compared to perfect crystal lattice, typical edge dislocation structure has been modeled by quantum chemistry simulation in order to analyze the influence of crystal structure defects on removal process in atmospheric pressure plasma polishing (APPP). The Partial density of states (PDOS), number of states, average number of bonding electrons and energy have been calculated and analyzed further for these models. The analysis results reveal that silicon crystal with edge dislocation can be etched more easily than that of perfect crystal lattice. It is also found that the removal rate of sample with higher dislocation density is larger than that of lower dislocation density in the same experiment conditions. Thus, theoretical simulation demonstrates that structure dislocation is helpful for raising the etching rate, which accords well with testifying experiments results. But maybe structure dislocation could deteriorate surface roughness to some extent in initial stage of machining, as the dislocation structure is usually etched unevenly, although this is just a transition period.

scholarly journals The effects of ion implantation damage to photonic crystal optomechanical resonators in silicon

2021 ◽  
Author(s):  
Cliona Shakespeare ◽  
Teemu Loippo ◽  
Henri Lyyra ◽  
Juha T Muhonen
Keyword(s):  
Ion Implantation ◽  
Crystal Lattice ◽  
Lattice Structure ◽  
Silicon Crystal ◽  
Silicon On Insulator ◽  
Ion Milling ◽  
Implantation Damage ◽  
Before And After ◽  
Lattice Damage ◽  
Optical And Mechanical Properties

Abstract Optomechanical resonators were fabricated on a silicon-on-insulator (SOI) substrate that had been implanted with phosphorus donors. The resonators’ mechanical and optical properties were then measured (at 6 kelvin and room temperature) before and after the substrate was annealed. All measured resonators survived the annealing and their mechanical linewidths decreased while their optical and mechanical frequencies increased. This is consistent with crystal lattice damage from the ion implantation causing the optical and mechanical properties to degrade and then subsequently being repaired by the annealing. We explain these effects qualitatively with changes in the silicon crystal lattice structure. We also report on some unexplained features in the pre-anneal samples. In addition, we report partial fabrication of optomechanical resonators with neon ion milling.

Germanium in Czochralski Silicon

2005 ◽  
Vol 242-244 ◽  
pp. 169-184 ◽  
Author(s):  
De Ren Yang ◽  
Jiahe Chen
Keyword(s):  
Mechanical Strength ◽  
Crystal Lattice ◽  
Silicon Crystal ◽  
Zone Formation ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

The behaviors of isovalent impurities doped in Czochralski (CZ) silicon crystal have attracted considerable attention in recent years. In this article, a review concerning recent processes in the study about germanium in CZ silicon is presented. The disturbance of silicon crystal lattice in and the influence on the mechanical strength due to germanium doping is described. Oxygen related donors, oxygen precipitation and voids defects in germanium doped Czochralski (GCZ) silicon has been demonstrated in detail. In addition, the denuded zone formation and the internal gettering technology of GCZ silicon is also discussed.

Growth of Diamond from Sputtered Atomic Carbon and Atomic Hydrogen

1992 ◽  
Vol 270 ◽  
Author(s):  
Darin S. Olson ◽  
Michael A. Kelly ◽  
Sanjiv Kapoor ◽  
Stig B. Hagstrom
Keyword(s):  
Growth Rate ◽  
Atomic Hydrogen ◽  
Surface Reaction ◽  
Crystal Surface ◽  
Silicon Crystal ◽  
Diamond Films ◽  
Diamond Growth ◽  
Graphite Target ◽  
Hydrogen Flux ◽  
Deposited Film

ABSTRACTDiamond thin films were grown on a scratched silicon crystal surface by a novel CVD technique. The substrate was exposed to a bombardment of sputtered carbon atoms from a graphite target in a helium DC glow discharge, and subsequently exposed to atomic hydrogen generated by a hot tungsten filament. The resulting diamond films were characterized by Raman spectroscopy and SEM. Deposited film quality, and growth rate are presented as a function of carbon flux, and atomic hydrogen flux. The observed increase in growth rate with atomic hydrogen indicates that a surface reaction mechanism may be responsible for growth. The saturation of the utilization of carbon confirms that the diamond growth is probably a surface reaction. Based on this work we propose that the growth of diamond films in the sequential CVD reactor is most likely governed by surface reactions, and that the necessity of gas phase precursors can be precluded.

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