Heat transfer mechanisms during short-duration laser heating of thin metal films

1997 ◽  
Vol 18 (5) ◽  
pp. 1257-1268 ◽  
Author(s):  
M. A. Al-Nimr
2010 ◽  
Vol 51 (6) ◽  
pp. 1156-1162 ◽  
Author(s):  
Hyung Sub Sim ◽  
Seungho Park ◽  
Tae-Hyoung Kim ◽  
Young Ki Choi ◽  
Joon Sik Lee ◽  
...  

Author(s):  
Takeru Komatsu ◽  
Hiroyasu Ohtake ◽  
Yasuo Koizumi

The present study was intended to examine how the condensation heat transfer, especially the drop-wise condensation, was affected by modifying the surface nature. In the present study, condensation heat transfer experiments for steam were performed by using mirror-finished copper surface, mirror-finished silicon surface and some mirror-finished silicon surfaces with very thin metal films by using spattering. The silicon surfaces with the thin metal films were created by the MEMS technology. The film- and also the drop-wise condensation were observed on the copper surface. The filmwise condensation heat flux was in good agreement with the values of the Nusselt’s equation. It was approximately one-tenth of the drop-wise condensation heat flux. The condensation on the mirror-finished silicon surface was the drop-wise condensation. The heat flux was approximately one-tenth of the drop-wise condensation heat flux on the copper surface. The condensation on silicon surfaces with thin Copper (Cu), Chromium (Cr), Lead (Pb) and Gold (Au) films were drop-wise. The condensation on silicon surfaces with thin Nickel (Ni), Titanium (Ti) and Aluminum (Al) films were filmwise.


Author(s):  
L. M. Gignac ◽  
K. P. Rodbell

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.


2021 ◽  
Vol 494 ◽  
pp. 229344
Author(s):  
Roelof J. Kriek ◽  
Liesel A. van Heerden ◽  
Anzel Falch ◽  
Malcolm I. Gillespie ◽  
Alaa Y. Faid ◽  
...  

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