Detection of the single electron tunneling noise using coulomb blockade electrometer

1996 ◽  
Vol 46 (S4) ◽  
pp. 2281-2282 ◽  
Author(s):  
A. B. Zorin ◽  
V. A. Krupenin ◽  
S. V. Lotkhov ◽  
J. Niemeyer ◽  
D. E. Presnov ◽  
...  
Keyword(s):  
Coulomb Blockade ◽  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Tunneling

ROOM TEMPERATURE TUNNELING CHARACTERISTICS OF ULTRA-SMALL NORMAL JUNCTIONS

1992 ◽  
Vol 06 (05) ◽  
pp. 273-280 ◽  
Author(s):  
M.D. REEVE ◽  
O.G. SYMKO ◽  
R. LI
Keyword(s):  
Scanning Tunneling Microscope ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Tunnel Junctions ◽  
Electron Tunneling ◽  
Single Electron ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Single Electron Tunneling ◽  
Coulomb Staircase

Tunneling studies between a Scanning Tunneling Microscope (STM)-controlled fine NbN tip and a NbN thin film show single electron tunneling characteristics at room temperature. The I-V curves display the Coulomb blockade and the Coulomb staircase caused by single electron charging of a series combination of two tunnel junctions. These room temperature observations indicate that it may be possible to operate single-electron-based devices in non-cryogenic regimes.

scholarly journals COULOMB BLOCKADE IN GRAPHENE QUANTUM DOTS

2012 ◽  
Vol 27 (01) ◽  
pp. 1350008 ◽  
Author(s):  
QIONG MA ◽  
TAO TU ◽  
LI WANG ◽  
CHEN ZHOU ◽  
ZHI-RONG LIN ◽  
...  
Keyword(s):  
Phase Transition ◽  
Quantum Dots ◽  
Line Shape ◽  
Low Temperatures ◽  
Coulomb Blockade ◽  
Electron Tunneling ◽  
Graphene Quantum Dots ◽  
Single Electron ◽  
Single Electron Tunneling ◽  
Conductance Spectrum

We study the conductance spectrum of graphene quantum dots, both single- and multiple-dot cases. The single electron tunneling through a graphene dot is investigated and the periodicity, amplitude and line shape of the Coulomb blockade oscillations at low temperatures are obtained, which are consistent with the recent experimental observations. Further, we discuss the transport behavior when multiple dots are assembled in array and find a phase transition of conductance spectra from individual Coulomb blockade to collective Coulomb blockade.

Single electron tunneling near the Coulomb blockade threshold

1994 ◽  
Vol 203 (3-4) ◽  
pp. 417-422 ◽  
Author(s):  
A.D. Zaikin ◽  
D.S. Golubev ◽  
S.V. Panyukov
Keyword(s):  
Coulomb Blockade ◽  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Tunneling

On the observability of Coulomb blockade and single-electron tunneling

1992 ◽  
Vol 42-44 ◽  
pp. 22-32 ◽  
Author(s):  
M.H. Devoret ◽  
D. Esteve ◽  
H. Grabert ◽  
G.-L. Ingold ◽  
H. Pothier ◽  
...  
Keyword(s):  
Coulomb Blockade ◽  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Tunneling

scholarly journals Analysis of Triple Quantum Dots Single Electron Transistor (TQD-SET) for Various Configuration

2020 ◽  
Vol 2 (2) ◽  
pp. 56
Author(s):  
Stephanus Hanurjaya ◽  
Miftahul Anwar ◽  
Meiyanto Eko Sulistyo ◽  
Irwan Iftadi ◽  
Subuh Pramono
Keyword(s):  
Quantum Dots ◽  
Coulomb Blockade ◽  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Single Electron Transistors ◽  
Single Electron Tunneling ◽  
Triple Quantum Dots ◽  
Working Principle ◽  
Electron Transistors

<p class="Abstract">Single electron transistor (SET) has high potential for the development of quantum computing technologies in order to provide low power consumption electronics. For that purpose, many studies have been conducted to develop SET using dopants as quantum dots (QD). The working principle of SET basically is a single electron tunneling one by one through tunnel junction based on the coulomb blockade effect. This research will simulate various configurations of triple quantum dots single electron transistors (TQD-SET) using SIMON 2.0 with an experimental approach of MOSFET with dopants QD. The configurations used are series, parallel, and triangle configuration. The mutual capacitance (Cm), tunnel junctions (TJ), and temperature values of TQD-SET configurations are varied. The I-V characteristics are observed and analyzed for typical source-drain voltage (Vsd). it is found that the TQD series requires larger Vsd than parallel or triangular TQDs. On the other hands, the current in parallel TQD tends to be stable even though Cm is changed, and the current in the TQD triangle is strongly influenced by the Cm. By comparing these three configurations, it is observed that the tunnelling rate is higher for parallel TQD due to higher probability current moves through three dots by applying Vds.</p>

Sign in / Sign up

Export Citation Format

Share Document