Energetic-position population in the inner zone

1996 ◽  
Vol 19 (4) ◽  
pp. 461-467 ◽  
Author(s):  
A. A. Gusev ◽  
I. M. Martin ◽  
G. I. Pugacheva ◽  
A. Turtelli ◽  
W. N. Spjeldvik
Keyword(s):  
Energetic Position

Identification of spatial localization and energetic position of electrically active defects in amorphous high-k dielectrics for advanced devices

2008 ◽  
Vol 354 (2-9) ◽  
pp. 393-398 ◽  
Author(s):  
H. García ◽  
S. Dueñas ◽  
H. Castán ◽  
L. Bailón ◽  
K. Kukli ◽  
...  
Keyword(s):  
Spatial Localization ◽  
High K ◽  
Energetic Position

The effect of local symmetry on the energetic position of DX centres in (AlxGa1-x)As and Ga(As1-xPx) alloys

1992 ◽  
Vol 7 (10) ◽  
pp. 1245-1250 ◽  
Author(s):  
J M Sallese ◽  
D K Maude ◽  
M L Fille ◽  
U Willke ◽  
P Gibart ◽  
...  
Keyword(s):  
Local Symmetry ◽  
Energetic Position

Defect states and their energetic position and distribution in organic molecular semiconductors

2013 ◽  
Vol 102 (14) ◽  
pp. 143301 ◽  
Author(s):  
Akanksha Sharma ◽  
Sarita Yadav ◽  
Pramod Kumar ◽  
Sumita Ray Chaudhuri ◽  
Subhasis Ghosh
Keyword(s):  
Defect States ◽  
Molecular Semiconductors ◽  
Energetic Position

scholarly journals Spin-resolved photoemission from Ir(111): Transitions into a secondary band and energetic position of the final state bands

1987 ◽  
Vol 61 (3) ◽  
pp. 187-192 ◽  
Author(s):  
N. Müller ◽  
B. Kessler ◽  
B. Schmiedeskamp ◽  
G. Schönhense ◽  
U. Heinzmann
Keyword(s):  
Final State ◽  
Energetic Position

Nonequilibrium Charge Carrier Generation - Recombination Mechanisms in CdMnTe Thin Films

2005 ◽  
Vol 865 ◽  
Author(s):  
Iuliana M. Caraman ◽  
Sergiu A. Vatavu ◽  
Valentina Z. Nicorici ◽  
Petru A. Gasin
Keyword(s):  
Thin Films ◽  
Charge Carrier ◽  
Energy Gap ◽  
Nonequilibrium Charge Carrier ◽  
Photoluminescence Spectra ◽  
Flash Evaporation ◽  
Carrier Generation ◽  
Vapor Phase Deposition ◽  
Substrate Temperatures ◽  
Energetic Position

The absorption, photoconductivity and photoluminescence spectra of Cd0.5Mn0.5Te thin films, deposited by “flash” evaporation and vapor phase deposition have been analyzed. The energy gap and the energetic position of the recombination levels in CdMnTe thin films for different substrate temperatures have been determined. The investigation results have been compared with the same parameters for CdMnTe single crystals used as evaporation material.

Luminescence Spectroscopy on Highly Excited Si - Experimental Determination of the Plasma Drift Velocity

1983 ◽  
Vol 23 ◽  
Author(s):  
B. Laurich ◽  
A. Forchel
Keyword(s):  
Emission Spectra ◽  
Laser Pulses ◽  
Intense Laser ◽  
Luminescence Spectroscopy ◽  
Electron Hole ◽  
Plasma Drift ◽  
Intense Laser Pulses ◽  
Electron Hole Plasma ◽  
Energetic Position

ABSTRACTThe emission spectra of the electron-hole plasma created at the surface of a Si sample by intense laser pulses (65 ns or 400 ps) are investigated. It is shown that the plasma drift is necessary for a consistent interpretation of the luminescence line shape and the energetic position of the line. We determine average densities up to 2.1019 cm−3 for 300K and typical drift velocities up to 4.106 cm/s.

Photoconductivity Study of CrB and CrI in Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
A. Schlette ◽  
R. Klenle ◽  
A. Dörnen ◽  
W. Kürner ◽  
K. Thonke
Keyword(s):  
Fourier Transform ◽  
High Resolution ◽  
Excited States ◽  
Ground State ◽  
Second Step ◽  
Free Electrons ◽  
Free Silicon ◽  
Short Lifetime ◽  
Energetic Position

AbstractWe observe in photoconductivity (PC) measurements EMT-like excited states of the pseudodonor CrB, which are responsible for the capture of free electrons due to their short lifetime. The energetic position of the ground state can be located at Ev + (292 ± 5) meV. A finestructure of the (CrB)° transition consisting of at least 15 components is observed in PC and high-resolution Fourier transform photoluminescence. In acceptor-free silicon a step in photoconductivity at 205 ± 10 meV is ascribed to interstitial Cr, whereas a second step at ~ 425 meV could be due to substitutional Cr.

The Effects of Impurity Codoping on the Electrical Properties of Erbium Ions in Crystalline Silicon

1996 ◽  
Vol 422 ◽  
Author(s):  
S. Libertino ◽  
S. Coffa ◽  
R. Mosca ◽  
E. Gombia
Keyword(s):  
Electrical Properties ◽  
Band Gap ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Deep Level ◽  
Minority Carrier Lifetime ◽  
Erbium Ions ◽  
Donor Behaviour ◽  
Energetic Position

AbstractWe have investigated the effects of oxygen codoping and thermal annealing on the deep level spectrum and carrier lifetime of Er implanted crystalline Si. It is found that oxygen codoping produces a dramatic modification in the concentration and energetic position of Er-related deep levels in the Si band gap. In particular the formation of Er-O complexes is shown to produce a promotion from deep to shallow levels. This effect is the major responsible of the enhancement of Er donor behaviour in presence of oxygen and also produces a large increase in the minority carrier lifetime

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