High-frequency conductivity of a two-dimensional electron gas with impurity electron states

1997 ◽  
Vol 40 (7) ◽  
pp. 675-678
Author(s):  
N. V. Gleizer ◽  
A. M. Ermolaev ◽  
Babak Khakiki
Keyword(s):  
High Frequency ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Electron States ◽  
Dimensional Electron Gas

scholarly journals High frequency conductivity of the high-mobility two-dimensional electron gas

2000 ◽  
Vol 76 (6) ◽  
pp. 745-747 ◽  
Author(s):  
P. J. Burke ◽  
I. B. Spielman ◽  
J. P. Eisenstein ◽  
L. N. Pfeiffer ◽  
K. W. West
Keyword(s):  
High Frequency ◽  
Electron Gas ◽  
High Mobility ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

scholarly journals Optical Performance of Two Dimensional Electron Gas and GaN:С Buffer Layers in AlGaN/AlN/GaN Heterostructures on SiC Substrate

2021 ◽  
Vol 11 (13) ◽  
pp. 6053
Author(s):  
Roman B. Adamov ◽  
Daniil Pashnev ◽  
Vadim A. Shalygin ◽  
Maria D. Moldavskaya ◽  
Maxim Ya. Vinnichenko ◽  
...  
Keyword(s):  
High Frequency ◽  
Electron Gas ◽  
Buffer Layers ◽  
High Electron ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Terahertz Time Domain Spectroscopy ◽  
Two Dimensional Electron Gas ◽  
Electron Effective Mass ◽  
Dimensional Electron Gas

Terahertz time-domain spectroscopy and Fourier-transform infrared spectroscopy were developed as the method for the investigation of high-frequency characteristics of two-dimensional electron gas and GaN:С buffer layers in AlGaN/AlN/GaN heterostructures grown on a semi-insulating SiC substrate. The reflectance and transmittance spectra of the selected heterostructure layers were studied after the top layers were removed by a reactive ion etching. Results were numerically analyzed using the transfer matrix method taking into account the high-frequency electron conductivity via a Drude model and complex dielectric permittivity of each epitaxial layer via a one-phonon-resonance approximation. Good agreement between the experiment and theory was achieved revealing the temperature dependent electron effective mass in AlGaN/AlN/GaN high electron mobility transistor structures and the small damping factors of optical phonons due to high crystal quality of the epitaxial layers fabricated on the SiC substrate.

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