The density of states in the mobility gap of amorphous-silicon films computed by a new analytical method

1988 ◽  
Vol 10 (3) ◽  
pp. 237-246
Author(s):  
V. Augelli ◽  
R. Murri ◽  
L. Schiavulli
Keyword(s):  
Amorphous Silicon ◽  
Density Of States ◽  
Analytical Method ◽  
Silicon Films ◽  
Mobility Gap

Determination of Hydrogen Density of States in Amorphous Silicon Using Fractional Evolution Experiments

1997 ◽  
Vol 467 ◽  
Author(s):  
A. J. Franz ◽  
W. B. Jackson ◽  
J. L. Gland
Keyword(s):  
Amorphous Silicon ◽  
Density Of States ◽  
Silicon Film ◽  
Mean Field ◽  
Frequency Factor ◽  
Silicon Films ◽  
Hydrogen Density ◽  
Heating And Cooling ◽  
Novel Method

ABSTRACTHydrogen plays an important role in the electronic behavior, structure and stability of amorphous silicon films. Therefore, determination of the hydrogen density of states (DOS) and correlation of the hydrogen DOS with the electronic film properties are important research goals. We have developed a novel method for determination of hydrogen DOS in silicon films, based on fractional evolution experiments. Fractional evolution experiments are performed by subjecting a silicon film to a series of linear, alternating heating and cooling ramps, while monitoring the hydrogen evolution rate. The fractional evolution data can be analyzed using two complementary memods, the fixed frequency factor approach and Arrhenius analysis. Using a rigorous, mean-field evolution model, we demonstrate the applicability of the two approaches to obtaining the hydrogen DOS in silicon films. We further validate both methods by analyzing experimental fractional evolution data foran amorphous silicon carbide film. Both types of analysis yield a similar double peaked density of states for the a-Si:C:H:D film.

Evaluation of density of states distribution in amorphous silicon films by photoconductivity measurements

1987 ◽  
Vol 90 (1-3) ◽  
pp. 123-126 ◽  
Author(s):  
V. Augelli ◽  
V. Berardi ◽  
R. Murri ◽  
L. Schiavulli
Keyword(s):  
Amorphous Silicon ◽  
Density Of States ◽  
Silicon Films

The density of states in the mobility gap of halogenated amorphous silicon

1989 ◽  
Vol 11 (6) ◽  
pp. 827-837
Author(s):  
V. Augelli ◽  
R. Murri ◽  
L. Schiavulli
Keyword(s):  
Amorphous Silicon ◽  
Density Of States ◽  
Mobility Gap

Observtion of an oxygen-related mobility-gap defect in ion-implanted hydrogenated amorphous silicon films

1987 ◽  
Vol 35 (8) ◽  
pp. 4141-4144 ◽  
Author(s):  
C. E. Michelson ◽  
A. V. Gelatos ◽  
J. D. Cohen ◽  
J. P. Harbison
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Hydrogenated Amorphous ◽  
Mobility Gap ◽  
Ion Implanted

On the measurement of the conductivity density of states of evaporated amorphous silicon films

1975 ◽  
Vol 72 (2) ◽  
pp. 761-770 ◽  
Author(s):  
M. H. Brodsky ◽  
G. H. Döhler ◽  
P. J. Steinhardt
Keyword(s):  
Amorphous Silicon ◽  
Density Of States ◽  
Silicon Films

HYDROGEN PROFILING IN GAS PHASE DOPED AND ION IMPLANTED AMORPHOUS SILICON FILMS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-779-C4-782 ◽  
Author(s):  
F. J. Demond ◽  
G. Müller ◽  
H. Damjantschitsch ◽  
H. Mannsperger ◽  
S. Kalbitzer ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Gas Phase ◽  
Silicon Films ◽  
Ion Implanted
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