Reaction of oxide components of molten core with hafnium dioxide and zirconium dioxide ceramic

Atomic Energy ◽  
1998 ◽  
Vol 84 (4) ◽  
pp. 256-259 ◽  
Author(s):  
F. A. Akopov ◽  
A. A. Akopyan ◽  
B. M. Barykin ◽  
G. E. Val'yano ◽  
V. N. Mineev ◽  
...  
Keyword(s):  
Zirconium Dioxide ◽  
Hafnium Dioxide ◽  
Zirconium Dioxide Ceramic

scholarly journals Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 136 ◽  
Author(s):  
Zhigang Xiao ◽  
Kim Kisslinger ◽  
Sam Chance ◽  
Samuel Banks
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Zirconium Dioxide ◽  
Atomic Layer ◽  
Gate Oxide ◽  
Hafnium Dioxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
X Ray ◽  
Layer Deposition

We report the growth of nanoscale hafnium dioxide (HfO2) and zirconium dioxide (ZrO2) thin films using remote plasma-enhanced atomic layer deposition (PE-ALD), and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using the HfO2 and ZrO2 thin films as the gate oxide. Tetrakis (dimethylamino) hafnium (Hf[N(CH3)2]4) and tetrakis (dimethylamino) zirconium (IV) (Zr[N(CH3)2]4) were used as the precursors, while O2 gas was used as the reactive gas. The PE-ALD-grown HfO2 and ZrO2 thin films were analyzed using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM). The XPS measurements show that the ZrO2 film has the atomic concentrations of 34% Zr, 2% C, and 64% O while the HfO2 film has the atomic concentrations of 29% Hf, 11% C, and 60% O. The HRTEM and XRD measurements show both HfO2 and ZrO2 films have polycrystalline structures. n-channel and p-channel metal-oxide semiconductor field-effect transistors (nFETs and pFETs), CMOS inverters, and CMOS ring oscillators were fabricated to test the quality of the HfO2 and ZrO2 thin films as the gate oxide. Current-voltage (IV) curves, transfer characteristics, and oscillation waveforms were measured from the fabricated transistors, inverters, and oscillators, respectively. The experimental results measured from the HfO2 and ZrO2 thin films were compared.

Interaction of the metallic components of melt in a reactor core with zirconium dioxide ceramic

Atomic Energy ◽  
1995 ◽  
Vol 79 (6) ◽  
pp. 857-862 ◽  
Author(s):  
F. A. Akopov ◽  
T. I. Borodina ◽  
G. E. Val'yano ◽  
L. P. Krishchenko ◽  
V. N. Mineev ◽  
...  
Keyword(s):  
Zirconium Dioxide ◽  
Reactor Core ◽  
Zirconium Dioxide Ceramic

scholarly journals Marginal and Internal Adaptation of Zirconium Dioxide Ceramic Copings and Crowns with Different Finish Line Designs

2007 ◽  
Vol 26 (5) ◽  
pp. 659-664 ◽  
Author(s):  
Futoshi KOMINE ◽  
Takayuki IWAI ◽  
Kazuhisa KOBAYASHI ◽  
Hideo MATSUMURA
Keyword(s):  
Zirconium Dioxide ◽  
Finish Line ◽  
Internal Adaptation ◽  
Zirconium Dioxide Ceramic

Behavior of zirconium-dioxide ceramic under the operating conditions of an external trap

Atomic Energy ◽  
1999 ◽  
Vol 87 (1) ◽  
pp. 505-509 ◽  
Author(s):  
F. A. Akopov ◽  
A. A. Akopyan ◽  
B. M. Barykin ◽  
T. I. Borodina ◽  
G. E. Val’yano ◽  
...  
Keyword(s):  
Zirconium Dioxide ◽  
Operating Conditions ◽  
Zirconium Dioxide Ceramic

Influence of convergence angle and cement space on adaptation of zirconium dioxide ceramic copings

2008 ◽  
Vol 66 (4) ◽  
pp. 214-218 ◽  
Author(s):  
Takayuki Iwai ◽  
Futoshi Komine ◽  
Kazuhisa Kobayashi ◽  
Ayako Saito ◽  
Hideo Matsumura
Keyword(s):  
Zirconium Dioxide ◽  
Convergence Angle ◽  
Zirconium Dioxide Ceramic
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