Orbital correlation effects: The independent pair-potential approximation with application to the ground state and first ionized state of boron hydride

1974 ◽  
Vol 35 (1) ◽  
pp. 17-32 ◽  
Author(s):  
E. L. Mehler
1999 ◽  
Vol 40 (11) ◽  
pp. 1237-1243 ◽  
Author(s):  
Lei Zhou ◽  
Jian-Tao Wang ◽  
Dingsheng Wang ◽  
Yoshiyuki Kawazoe

1970 ◽  
Vol 48 (2) ◽  
pp. 167-181 ◽  
Author(s):  
D. J. W. Geldart ◽  
Roger Taylor

An interpolation formula is suggested for the wave-number and density dependence of the static screening function for an interacting electron gas in its ground state. The approximate screening function simulates a number of properties of the exact screening function which have been established by analysis of its many-body perturbation expansion. The accuracy of the interpolation formula is discussed and is considered to be adequate for practical calculations in the range of intermediate metallic densities.


1989 ◽  
Vol 28 (1) ◽  
pp. 109-111 ◽  
Author(s):  
John F. Stanton ◽  
William N. Lipscomb ◽  
Rodney J. Bartlett ◽  
Michael L. McKee

1990 ◽  
Vol 186 ◽  
Author(s):  
W. A. Shelton ◽  
F. J. Pinski ◽  
D. D. Johnson ◽  
D. M. Nicholson ◽  
G. M. Stocks

AbstractWe have performed calculations of the electronic structure of the random substitutional bcc Fe1-xCrx alloys, using the spin-polarized, self-consistent Korringa, Kohn and Rostoker coherent potential approximation (KKR-CPA) method. This is a first principles method based on a local spin density approximation for electron exchange and correlation energy. For the iron-rich alloys, we find that the average moment decreases linearly with Cr concentration, although the individual moments show a different concentration dependence and the Cr moment is anti-parallel to the Fe moment. This system is similar to Fe1-xVx system, although some details are different.


2006 ◽  
Vol 20 (17) ◽  
pp. 2359-2368 ◽  
Author(s):  
JIA LIU ◽  
JING-LIN XIAO

The binding energy of the ground state of a bound polaron near the interface of a polar-polar semiconductor heterojunction is investigated by using the Lee–Low–Pines intermediate coupling method. The influence of a triangular potential approximation of the interface, the electron-phonon and impurity-phonon interactions as well as the half-space bulk longitudinal and interface-optical phonon modes are all taken into account. We have performed numerical calculations on the GaAs / Al x Ga 1-x As (0.2 ≤ x ≤ 0.4) heterojunction system and studied the relations between the ground state binding energy of the polaron and the impurity position, electric field strength and electron area density, respectively. It is found that with the increase in the distance between the impurity and the interface, the binding energy and the contribution of phonons reach the maximum. It is also found that the binding energy of the bound polaron increases slowly with the increase in an electric field while the total polaronic correction decreases the binding energy. When the electron area density is increased, the contribution of the interface-optical (IO) modes is greater than that of the bulk longitudinal optical (LO) mode.


1994 ◽  
Vol 50 (3) ◽  
pp. 2150-2154 ◽  
Author(s):  
James H. Lupton ◽  
Daniel D. Dietrich ◽  
Charles J. Hailey ◽  
Richard E. Stewart ◽  
Klaus P. Ziock

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