Rate constants of the reaction of fluorine atoms with carbon monoxide

1975 ◽  
Vol 3 (2) ◽  
pp. 205-207 ◽  
Author(s):  
V. S. Arutyunov ◽  
S. N. Buben ◽  
A. M. Chaikin
Keyword(s):  
Carbon Monoxide ◽  
Rate Constants

Rate constants for energy transfer in carbon monoxide

2000 ◽  
Vol 113 (12) ◽  
pp. 4869 ◽  
Author(s):  
Cecilia Coletti ◽  
Gert D. Billing
Keyword(s):  
Carbon Monoxide ◽  
Energy Transfer ◽  
Rate Constants

scholarly journals Analysis of the contribution of the globin and reductase domains to the ligand-binding properties of bacterial haemoglobins

2007 ◽  
Vol 407 (1) ◽  
pp. 15-22 ◽  
Author(s):  
Judith Farrés ◽  
Susanna Burckhardt-Herold ◽  
Jan Scherrer ◽  
Alexander D. Frey ◽  
Pauli T. Kallio
Keyword(s):  
Nitric Oxide ◽  
Carbon Monoxide ◽  
Fusion Protein ◽  
Ligand Binding ◽  
Rate Constants ◽  
Ralstonia Eutropha ◽  
Solvent Accessibility ◽  
Truncated Form ◽  
Binding Properties ◽  
Reductase Domain

Bacterial Hbs (haemoglobins), like VHb (Vitreoscilla sp. Hb), and flavoHbs (flavohaemoglobins), such as FHP (Ralstonia eutropha flavoHb), have different autoxidation and ligand-binding rates. To determine the influence of each domain of flavoHbs on ligand binding, we have studied the kinetic ligand-binding properties of oxygen, carbon monoxide and nitric oxide to the chimaeric proteins, FHPg (truncated form of FHP comprising the globin domain alone) and VHb-Red (fusion protein between VHb and the C-terminal reductase domain of FHP) and compared them with those of their natural counterparts, FHP and VHb. Moreover, we also analysed polarity and solvent accessibility to the haem pocket of these proteins. The rate constants for the engineered proteins, VHb-Red and FHPg, do not differ significantly from those of their natural counterparts, VHb and FHP respectively. Our results suggest that the globin domain structure controls the reactivity towards oxygen, carbon monoxide and nitric oxide. The presence or absence of a reductase domain does not affect the affinity to these ligands.

ChemInform Abstract: Rate Constants for Addition of a Primary Alkyl Radical to Carbon Monoxide.

ChemInform ◽  
2010 ◽  
Vol 27 (14) ◽  
pp. no-no
Author(s):  
K. NAGAHARA ◽  
I. RYU ◽  
N. KAMBE ◽  
M. KOMATSU ◽  
N. SONODA
Keyword(s):  
Carbon Monoxide ◽  
Rate Constants ◽  
Alkyl Radical ◽  
Rate Constants For Addition

scholarly journals Siloxane treatment of metal oxide semiconductor gas sensors in temperature-cycled operation – sensitivity and selectivity

2020 ◽  
Vol 9 (2) ◽  
pp. 283-292
Author(s):  
Caroline Schultealbert ◽  
Iklim Uzun ◽  
Tobias Baur ◽  
Tilman Sauerwald ◽  
Andreas Schütze
Keyword(s):  
Carbon Monoxide ◽  
Rate Constants ◽  
Oxide Semiconductor ◽  
Temperature Cycle ◽  
Temperature Changes ◽  
Sensitivity And Selectivity ◽  
Semiconductor Gas Sensors ◽  
Reduced Rate ◽  
Reducing Gases ◽  
The Impact

Abstract. The impact of a hexamethyldisiloxane (HMDSO) treatment on the response of doped SnO2 sensors is investigated for acetone, carbon monoxide and hydrogen. The sensor was operated in temperature cycles based on the DSR concept (differential surface reduction). According to this concept, the rate constants for the reduction and oxidation of the surface after fast temperature changes can be evaluated and used for quantification of reducing gases as well as quantification and compensation of sensor poisoning by siloxanes, which is shown in this work. Increasing HMDSO exposure reduces the rate constants and therefore the sensitivity of the sensor more and more for all processes. On the other hand, while the rate constants for acetone and carbon monoxide are reduced nearly to zero already for short treatments, the hydrogen sensitivity remains fairly stable, which greatly increases the selectivity. During repeated HMDSO treatment the quasistatic sensitivity, i.e. equilibrium sensitivity at one point during the temperature cycle, rises at first for all gases but then drops rapidly for acetone and carbon monoxide, which can also be explained by reduced rate constants for oxygen chemisorption on the sensor surface when considering the generation of surface charge.

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