A positron annihilation study on phase transitions in trans-stilbene single crystal

1995 ◽  
Vol 200 (3) ◽  
pp. 265-275 ◽  
Author(s):  
M. Bokor ◽  
T. Marek ◽  
K. Süvegh ◽  
I. Konkoly Theqe ◽  
A. Vértes
Keyword(s):  
Phase Transitions ◽  
Single Crystal ◽  
Positron Annihilation ◽  
Trans Stilbene ◽  
In Trans ◽  
Positron Annihilation Study

scholarly journals Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

2011 ◽  
Vol 262 ◽  
pp. 012059 ◽  
Author(s):  
C K To ◽  
B Yang ◽  
C D Beling ◽  
S Fung ◽  
C C Ling ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Single Crystal ◽  
Positron Annihilation ◽  
Positron Annihilation Study

Positron annihilation study of voids in a neutron irradiated aluminum single crystal

1976 ◽  
Vol 10 (1) ◽  
pp. 85-90 ◽  
Author(s):  
K. Petersen ◽  
N. Thrane ◽  
G. Trumpy ◽  
R. W. Hendricks
Keyword(s):  
Single Crystal ◽  
Positron Annihilation ◽  
Aluminum Single Crystal ◽  
Positron Annihilation Study

Positron-annihilation study of phase transitions in ethane physisorbed on grafoil

1994 ◽  
Vol 49 (4) ◽  
pp. 2821-2824 ◽  
Author(s):  
P. C. Jain ◽  
S. K. Lee ◽  
N. Hozhabri ◽  
S. C. Sharma
Keyword(s):  
Phase Transitions ◽  
Positron Annihilation ◽  
Positron Annihilation Study

Electron momentum distribution mapping of trans-stilbene single crystal by positron annihilation

2005 ◽  
Vol 412 (4-6) ◽  
pp. 327-330 ◽  
Author(s):  
Krishnan Sivaji ◽  
Arjunan Arulchakkaravarthi ◽  
Sellaiyan Selvakumar ◽  
Perumalsamy Ramasamy ◽  
Sambasivam Sankar ◽  
...  
Keyword(s):  
Single Crystal ◽  
Positron Annihilation ◽  
Momentum Distribution ◽  
Electron Momentum ◽  
Electron Momentum Distribution ◽  
Trans Stilbene ◽  
Distribution Mapping

Positron annihilation study of vacancy-type defects in Al single crystal foils with the tweed structures across the surface

2015 ◽  
Author(s):  
Pavel Kuznetsov ◽  
Jacub Cizek ◽  
Petr Hruska ◽  
Wolfgang Anwad ◽  
Yuri Bordulev ◽  
...  
Keyword(s):  
Single Crystal ◽  
Positron Annihilation ◽  
Positron Annihilation Study

Positron annihilation study of lattice defects and phase transitions in tin

1985 ◽  
Vol 52 (4) ◽  
pp. 431-439 ◽  
Author(s):  
P. C. Rice-evans ◽  
M. Moussavi-madani ◽  
F. A. R. El Khangi ◽  
K. U. Rao
Keyword(s):  
Phase Transitions ◽  
Positron Annihilation ◽  
Lattice Defects ◽  
Positron Annihilation Study

Dependence of the Ferromagnetism on Vacancy Defect in Annealed In 2 O 3 Nanocrystals: A Positron Annihilation Study

2021 ◽  
pp. 2000631
Author(s):  
Zihao Wang ◽  
Xiumei Dong ◽  
Zhiyuan Chen ◽  
Houhua Xiong ◽  
Jie Gao ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Vacancy Defect ◽  
Positron Annihilation Study

Complex structure and Mössbauer effect observed in the course of phase transitions in PbZr0.72Sn0.28O3 single crystal

2020 ◽  
Vol 153 (22) ◽  
pp. 224202
Author(s):  
Irena Jankowska-Sumara ◽  
Mariola Kądziołka-Gaweł ◽  
Maria Podgórna ◽  
Andrzej Majchrowski ◽  
Krystian Roleder
Keyword(s):  
Phase Transitions ◽  
Single Crystal ◽  
Mössbauer Effect ◽  
Complex Structure ◽  
Mossbauer Effect

scholarly journals The Influence of Wire Speed on Phase Transitions and Residual Stress in Single Crystal Silicon Wafers Sawn by Resin Bonded Diamond Wire Saw

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 429
Author(s):  
Tengyun Liu ◽  
Peiqi Ge ◽  
Wenbo Bi
Keyword(s):  
Residual Stress ◽  
Surface Layer ◽  
Phase Transitions ◽  
Single Crystal ◽  
Amorphous Silicon ◽  
Silicon Wafer ◽  
Single Crystal Silicon ◽  
Silicon Wafers ◽  
Crystal Silicon ◽  
Diamond Wire

Lower warp is required for the single crystal silicon wafers sawn by a fixed diamond wire saw with the thinness of a silicon wafer. The residual stress in the surface layer of the silicon wafer is the primary reason for warp, which is generated by the phase transitions, elastic-plastic deformation, and non-uniform distribution of thermal energy during wire sawing. In this paper, an experiment of multi-wire sawing single crystal silicon is carried out, and the Raman spectra technique is used to detect the phase transitions and residual stress in the surface layer of the silicon wafers. Three different wire speeds are used to study the effect of wire speed on phase transition and residual stress of the silicon wafers. The experimental results indicate that amorphous silicon is generated during resin bonded diamond wire sawing, of which the Raman peaks are at 178.9 cm−1 and 468.5 cm−1. The ratio of the amorphous silicon surface area and the surface area of a single crystal silicon, and the depth of amorphous silicon layer increases with the increasing of wire speed. This indicates that more amorphous silicon is generated. There is both compressive stress and tensile stress on the surface layer of the silicon wafer. The residual tensile stress is between 0 and 200 MPa, and the compressive stress is between 0 and 300 MPa for the experimental results of this paper. Moreover, the residual stress increases with the increase of wire speed, indicating more amorphous silicon generated as well.

Sign in / Sign up

Export Citation Format

Share Document