Automatic layout synthesis of analog ICs using circuit recognition and constraint analysis techniques

1991 ◽  
Vol 1 (1) ◽  
pp. 75-87 ◽  
Author(s):  
David J. Chen ◽  
Bing J. Sheu
Keyword(s):  
Analysis Techniques ◽  
Constraint Analysis ◽  
Layout Synthesis ◽  
Automatic Layout

Exploring a New Tool for Automatic Layout Synthesis for FDSOI 28 nm

2021 ◽  
Author(s):  
Vitor Hugo F. Maciel ◽  
Germano Girondi ◽  
Elias Ramos ◽  
Ricardo Reis
Keyword(s):  
Layout Synthesis ◽  
Automatic Layout ◽  
28 Nm

Automatic layout synthesis for FIR filters using a silicon compiler

2002 ◽  
Author(s):  
M. Ishikawa ◽  
M. Edahiro ◽  
T. Yoshimura ◽  
T. Miyazaki ◽  
S.-I. Aikoh ◽  
...  
Keyword(s):  
Fir Filters ◽  
Silicon Compiler ◽  
Layout Synthesis ◽  
Automatic Layout

Automatic layout synthesis with ASTRAN applied to asynchronous cells

2014 ◽  
Author(s):  
Adriel Ziesemer ◽  
Ricardo Reis ◽  
Matheus T. Moreira ◽  
Michel E. Arendt ◽  
Ney L. V. Calazans
Keyword(s):  
Layout Synthesis ◽  
Automatic Layout

Towards the automatic layout synthesis in resonant-type metamaterial transmission lines

2010 ◽  
Vol 4 (8) ◽  
pp. 1007 ◽  
Author(s):  
J. Selga ◽  
A. Rodrı́guez ◽  
M. Gil ◽  
J. Carbonell ◽  
V.E. Boria ◽  
...  
Keyword(s):  
Transmission Lines ◽  
Layout Synthesis ◽  
Automatic Layout

An example of spectrum imaging used for comparison of EELS quantitative analysis techniques on Al-Li

1991 ◽  
Vol 49 ◽  
pp. 726-727
Author(s):  
John A. Hunt
Keyword(s):  
Quantitative Analysis ◽  
Large Data ◽  
Difference Spectrum ◽  
Large Data Sets ◽  
Foil Thickness ◽  
Data Sets ◽  
Analysis Techniques ◽  
Spectrum Imaging ◽  
Normal Spectrum ◽  
Electron Energy Loss

Spectrum-imaging is a useful technique for comparing different processing methods on very large data sets which are identical for each method. This paper is concerned with comparing methods of electron energy-loss spectroscopy (EELS) quantitative analysis on the Al-Li system. The spectrum-image analyzed here was obtained from an Al-10at%Li foil aged to produce δ' precipitates that can span the foil thickness. Two 1024 channel EELS spectra offset in energy by 1 eV were recorded and stored at each pixel in the 80x80 spectrum-image (25 Mbytes). An energy range of 39-89eV (20 channels/eV) are represented. During processing the spectra are either subtracted to create an artifact corrected difference spectrum, or the energy offset is numerically removed and the spectra are added to create a normal spectrum. The spectrum-images are processed into 2D floating-point images using methods and software described in [1].

Dissociated Σ=27 boundaries in silicon

1988 ◽  
Vol 46 ◽  
pp. 624-625
Author(s):  
A. Garg ◽  
W.A.T. Clark ◽  
J.P. Hirth
Keyword(s):  
Electron Diffraction ◽  
Local Minimum ◽  
Boundary Energy ◽  
Coincidence Site Lattice ◽  
Boundary Plane ◽  
Low Energy ◽  
Theoretical Understanding ◽  
Site Lattice ◽  
Kikuchi Pattern ◽  
Analysis Techniques

In the last twenty years, a significant amount of work has been done in the theoretical understanding of grain boundaries. The various proposed grain boundary models suggest the existence of coincidence site lattice (CSL) boundaries at specific misorientations where a periodic structure representing a local minimum of energy exists between the two crystals. In general, the boundary energy depends not only upon the density of CSL sites but also upon the boundary plane, so that different facets of the same boundary have different energy. Here we describe TEM observations of the dissociation of a Σ=27 boundary in silicon in order to reduce its surface energy and attain a low energy configuration.The boundary was identified as near CSL Σ=27 {255} having a misorientation of (38.7±0.2)°/[011] by standard Kikuchi pattern, electron diffraction and trace analysis techniques. Although the boundary appeared planar, in the TEM it was found to be dissociated in some regions into a Σ=3 {111} and a Σ=9 {122} boundary, as shown in Fig. 1.

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