scholarly journals Desorption kinetic parameters as deduced from temperature programmed desorption curves

1985 ◽  
Vol 30 (1) ◽  
pp. 293-293
Author(s):  
R. Spinicci
Keyword(s):  
Kinetic Parameters ◽  
Temperature Programmed Desorption ◽  
Desorption Kinetic ◽  
Temperature Programmed

Temperature-programmed desorption studies of NH3 and H2O on the RuO2(110) surface: effects of adsorbate diffusion

2018 ◽  
Vol 20 (37) ◽  
pp. 24201-24209 ◽  
Author(s):  
Kai-Ting Wang ◽  
Santhanamoorthi Nachimuthu ◽  
Jyh-Chiang Jiang
Keyword(s):  
Kinetic Parameters ◽  
Surface Science ◽  
Surface Effects ◽  
Temperature Programmed Desorption ◽  
Thermodynamic And Kinetic Parameters ◽  
Temperature Programmed

Temperature-programmed desorption (TPD) is one of the most straightforward surface science experiments for the determination of the thermodynamic and kinetic parameters of a reaction.

Extraction of kinetic parameters in temperature programmed desorption: A comparison of methods

1987 ◽  
Vol 87 (11) ◽  
pp. 6725-6732 ◽  
Author(s):  
J. B. Miller ◽  
H. R. Siddiqui ◽  
S. M. Gates ◽  
J. N. Russell ◽  
J. T. Yates ◽  
...  
Keyword(s):  
Kinetic Parameters ◽  
Temperature Programmed Desorption ◽  
Comparison Of Methods ◽  
Temperature Programmed

Interactions of Ge Atoms with High- ê Oxide Dielectric Surfaces

2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Temperature Programmed Desorption ◽  
Tungsten Filament ◽  
X Ray ◽  
Dielectric Surfaces ◽  
Temperature Programmed ◽  
The Stability ◽  
Ge Nanocrystals

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.

Kinetics of temperature-programmed reactivation of a hydrodesulphurization catalyst

1983 ◽  
Vol 48 (12) ◽  
pp. 3340-3355 ◽  
Author(s):  
Pavel Fott ◽  
Pavel Šebesta
Keyword(s):  
Carbon Dioxide ◽  
Thermal Analysis ◽  
Differential Thermal Analysis ◽  
Thin Layer ◽  
Kinetic Parameters ◽  
Diffusion Region ◽  
Reaction Heat ◽  
Gaseous Products ◽  
Temperature Programmed ◽  
Kinetics Of

The kinetic parameters of reactivation of a carbonized hydrodesulphurization (HDS) catalyst by air were evaluated from combined thermogravimetric (TG) and differential thermal analysis (DTA) data. In addition, the gaseous products leaving a temperature-programmed reactor with a thin layer of catalyst were analyzed chromatographically. Two exothermic processes were found to take part in the reactivation, and their kinetics were described by 1st order equations. In the first process (180-400 °C), sulphur in Co and Mo sulphides is oxidized to sulphur dioxide; in the second process (300-540 °C), in which the essential portion of heat is produced, the deposited carbon is oxidized to give predominantly carbon dioxide. If the reaction heat is not removed efficiently enough, ignition of the catalyst takes place, which is associated with a transition to the diffusion region. The application of the obtained kinetic parameters to modelling a temperature-programmed reactivation is illustrated on the case of a single particle.

Sign in / Sign up

Export Citation Format

Share Document