The role of excited states in the photolysis of n-butyraldehyde, II. Intersystem crossing quantum yields

1977 ◽  
Vol 7 (1) ◽  
pp. 45-51 ◽  
Author(s):  
M. Tölgyesi ◽  
Á. Nacsa ◽  
T. Bérces
2020 ◽  
Vol 44 (40) ◽  
pp. 17252-17266
Author(s):  
Leo Mandić ◽  
Iva Džeba ◽  
Dijana Jadreško ◽  
Branka Mihaljević ◽  
László Biczók ◽  
...  

Substituents on phthalimide affect its photophysics and photochemical reactivity. Electron donors generally result in low quantum yields of intersystem crossing and reactivity from singlet excited states.


2021 ◽  
Author(s):  
Plinio Cantero-López ◽  
Yoan Hidalgo-Rosa ◽  
Zoraida Sandoval-Olivares ◽  
Julián Santoyo-Flores ◽  
Pablo Mella ◽  
...  

Rhenium tricarbonyl complexes are one of the most important classes of coordination compounds in inorganic chemistry. Exploring their luminescent excited states, lowest singlet (S1), and the lowest triplet (T1), is...


Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 640
Author(s):  
Artem I. Khrebtov ◽  
Vladimir V. Danilov ◽  
Anastasia S. Kulagina ◽  
Rodion R. Reznik ◽  
Ivan D. Skurlov ◽  
...  

The passivation influence by ligands coverage with trioctylphosphine oxide (TOPO) and TOPO including colloidal CdSe/ZnS quantum dots (QDs) on optical properties of the semiconductor heterostructure, namely an array of InP nanowires (NWs) with InAsP nanoinsertion grown by Au-assisted molecular beam epitaxy on Si (111) substrates, was investigated. A significant dependence of the photoluminescence (PL) dynamics of the InAsP insertions on the ligand type was shown, which was associated with the changes in the excitation translation channels in the heterostructure. This change was caused by a different interaction of the ligand shells with the surface of InP NWs, which led to the formation of different interfacial low-energy states at the NW-ligand boundary, such as surface-localized antibonding orbitals and hybridized states that were energetically close to the radiating state and participate in the transfer of excitation. It was shown that the quenching of excited states associated with the capture of excitation to interfacial low-energy traps was compensated by the increasing role of the “reverse transfer” mechanism. As a result, the effectiveness of TOPO-CdSe/ZnS QDs as a novel surface passivation coating was demonstrated.


1996 ◽  
Vol 100 (25) ◽  
pp. 10518-10522 ◽  
Author(s):  
Akira Watanabe ◽  
Osamu Ito ◽  
Motoyuki Watanabe ◽  
Haruhisa Saito ◽  
Musubu Koishi

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