Determination of the far infrared optical constants of η-doped bulk CdxHg1−xTe (CMT) by dispersive fourier transform spectroscopy

1995 ◽  
Vol 16 (4) ◽  
pp. 763-773 ◽  
Author(s):  
S. Farjami Shayesteh ◽  
T. Dumelow ◽  
T. J. Parker ◽  
T. I. Benushis ◽  
S. N. Ershov ◽  
...  
Keyword(s):  
Fourier Transform ◽  
Optical Constants ◽  
Far Infrared ◽  
Fourier Transform Spectroscopy ◽  
Dispersive Fourier Transform Spectroscopy

Dispersive Fourier Transform Spectroscopy Of Free-Standing Porous Silicon Films

1997 ◽  
Vol 486 ◽  
Author(s):  
J. Salonen ◽  
K. Saarinen ◽  
J. Peura ◽  
J. Vilnikanoja ◽  
I. Salomaa ◽  
...  
Keyword(s):  
Refractive Index ◽  
Fourier Transform ◽  
Porous Silicon ◽  
Absorption Coefficient ◽  
Optical Constants ◽  
Fourier Transform Spectroscopy ◽  
Silicon Films ◽  
Spectral Variation ◽  
Free Standing ◽  
Dispersive Fourier Transform Spectroscopy

AbstractWe have investigated optical constants of free-standing porous silicon films by dispersive Fourier transform spectroscopy (DFTS) in the NIR-VIS range. This allows the spectral variation of both the absorption coefficient and the refractive index of a material to be determined from the measurements of the attenuation and phase shift imposed on an electromagnetic wave by its interaction with a specimen. Using these optical constants, we have studied the complex dielectric function and the complex conductivity. To avoid the additive error in the absorption spectra arising from the pseudocoherence, we measured the transmission spectra by conventional Fourier transform spectroscopy (FTS). Using the refraction spectrum derived from the DFTS measurements, we have corrected for reflection losses in calculation of the absorption spectrum from the FTS transmission spectrum. The changes in the absorption coefficient and the refractive index due to oxidation, which is the most common aging phenomenon in porous silicon, have been studied using samples with different types of oxidization.

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