Conversion electron and X-ray Mössbauer studies of the corrosion products and surface modifications in stainless and weathering steels

1986 ◽  
Vol 28 (1-4) ◽  
pp. 891-894 ◽  
Author(s):  
D. C. Cook
1991 ◽  
Vol 223 ◽  
Author(s):  
Neeta Agrawal ◽  
R. D. Tarey ◽  
K. L. Chopra

ABSTRACTArgon plasma exposure has been used to induce surface chemical modification of aluminium thin films, causing a drastic change in etch rate in standard HNO3/CH3COOH/H3PO4 etchant. The inhibition period was found to increase with power and Ar plasma exposure time. Auger electron and x-ray photoelectron spectroscopies have indicated formation of an aluminium fluoride (AlF3) surface layer due to fluorine contamination originating from the residue left in the plasma chamber during CF4 processing. The high etch selectivity between unexposed and argon plasma exposed regions has been exploited as a new technique for resistless patterning of aluminium.


2019 ◽  
Vol 207 ◽  
pp. 304-315 ◽  
Author(s):  
Guohao Fang ◽  
Weijian Ding ◽  
Yuqing Liu ◽  
Jianchao Zhang ◽  
Feng Xing ◽  
...  

1992 ◽  
Vol 46 (11) ◽  
pp. 7144-7152 ◽  
Author(s):  
T. Girardeau ◽  
J. Mimault ◽  
M. Jaouen ◽  
P. Chartier ◽  
G. Tourillon

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