Parametric sensitivity of complex temperature-programmed desorption, reaction and reduction

1989 ◽  
Vol 35 (3) ◽  
pp. 837-847 ◽  
Author(s):  
V. Stuchlý
Keyword(s):  
Temperature Programmed Desorption ◽  
Parametric Sensitivity ◽  
Temperature Programmed ◽  
Complex Temperature ◽  
Desorption Reaction

Optimized Reactants Mixture and Products Hydrolysis in the Manganese Oxide Thermochemical Cycle

2009 ◽  
Author(s):  
Francesca Varsano ◽  
Mariangela Bellusci ◽  
Carlo Alvani ◽  
Aurelio La Barbera ◽  
Franco Padella ◽  
...  
Keyword(s):  
Hydrogen Production ◽  
Manganese Oxide ◽  
Hydrogen Evolution ◽  
Temperature Programmed Desorption ◽  
Inert Gas ◽  
Thermochemical Cycle ◽  
Temperature Programmed ◽  
Lower Temperature ◽  
Desorption Reaction ◽  
Aqueous Slurry

A novel system composed by an aqueous slurry prepared by MnO and NaOH mixture was tested for the hydrogen production in the sodium manganese oxide thermochemical cycle. The hydrogen evolution occurs at lower temperature than conventional mixtures utilized in the cycle. Experiments performed in a Temperature Programmed Desorption/Reaction apparatus (TPD/TPR) have evidenced hydrogen production around 500°C. The hydrolysis step of α-NaMnO2 has been studied and the importance to conduct hydrolysis reaction under inert gas is discussed. A manganese disproportion mechanism is hypothesized to explain the appearance of manganese (II) and manganese (IV) containing phases.

Interactions of Ge Atoms with High- ê Oxide Dielectric Surfaces

2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Temperature Programmed Desorption ◽  
Tungsten Filament ◽  
X Ray ◽  
Dielectric Surfaces ◽  
Temperature Programmed ◽  
The Stability ◽  
Ge Nanocrystals

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.

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