Positron/positronium annihilation in nanocrystalline silicon thin films

1996 ◽  
Vol 211 (1) ◽  
pp. 31-38
Author(s):  
X. Zhao ◽  
Y. Itoh ◽  
Y. Aoyagi ◽  
T. Sugano ◽  
K. Hirata ◽  
...  
Keyword(s):  
Thin Films ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films ◽  
Positronium Annihilation

Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Percolation Theory ◽  
Nanocrystalline Silicon ◽  
Spatial Light Modulators ◽  
Light Emitting ◽  
Light Modulators ◽  
Silicon Thin Films ◽  
Longitudinal Conductivity ◽  
Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

Nanocrystalline silicon thin films prepared by radiofrequency magnetron sputtering

2002 ◽  
Vol 403-404 ◽  
pp. 91-96 ◽  
Author(s):  
C. Gonçalves ◽  
S. Charvet ◽  
A. Zeinert ◽  
M. Clin ◽  
K. Zellama
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films

scholarly journals INVESTIGATION OF GROWTH MECHANISM OF NANOCRYSTALLINE SILICON THIN FILMS PREPARED BY HOT-FILAMENT CHEMICAL VAPOR DEPOSITION

1997 ◽  
Vol 46 (10) ◽  
pp. 2015
Author(s):  
CHEN GUO ◽  
GUO XIAO-XU ◽  
ZHU MEI-FANG ◽  
SUN JING-LAN ◽  
XU HUAI-ZHE ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films ◽  
Hot Filament

Optimization of p-type Nanocrystalline Silicon Thin Films for Solar Cells and Photodiodes

2009 ◽  
Vol 1153 ◽  
Author(s):  
Yuri Vygranenko ◽  
Ehsanollah Fathi ◽  
Andrei Sazonov ◽  
Manuela Vieira ◽  
Gregory Heiler ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Chemical Vapor ◽  
Percolation Cluster ◽  
Nanocrystalline Silicon ◽  
Film Structure ◽  
Silicon Thin Films ◽  
Low Leakage ◽  
In Doping ◽  
P Type

AbstractWe report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150°C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The film thickness was varied in the range from 14 to 100 nm. The conductivity of 60 nm thick films reached a peak value of 0.07 S/cm at a doping ratio of 1%. As a result of amorphization of the film structure, which was indicated by Raman spectra measurements, any further increase in doping reduced conductivity. We also observed an abrupt increase in conductivity with increasing film thickness ascribed to a percolation cluster composed of silicon nanocrystallites. The absorption loss of 25% at a wavelength of 400 nm was measured for the films with optimized conductivity deposited on glass and glass/ZnO:Al substrates. A low-leakage, blue-enhanced p-i-n photodiode with an nc-Si p-layer was also fabricated and characterized.

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