Optical feedback effect on bistable laser diodes

1987 ◽  
Vol 19 (S1) ◽  
pp. S75-S82 ◽  
Author(s):  
Akihisa Tomita ◽  
Akira Suzuki
Keyword(s):  
Optical Feedback ◽  
Laser Diodes ◽  
Feedback Effect

Synchronization of Chaotic Quantum Dot Light Emitting Diodes under Optical Feedback Effect

2020 ◽  
pp. 144-148
Keyword(s):  
Quantum Dot ◽  
Delay Time ◽  
Chaos Synchronization ◽  
Optical Feedback ◽  
Light Emitting Diode ◽  
Feedback Effect ◽  
Complete Synchronization ◽  
Light Emitting ◽  
Coupling Methods ◽  
Coupling Parameters

Chaos synchronization of delayed quantum dot light emitting diode has been studied theortetically which are coupled via the unidirectional and bidirectional. at synchronization of chaotic, The dynamics is identical with delayed optical feedback for those coupling methods. Depending on the coupling parameters and delay time the system exhibits complete synchronization, . Under proper conditions, the receiver quantum dot light emitting diode can be satisfactorily synchronized with the transmitter quantum dot light emitting diode due to the optical feedback effect.

Suppression of Optical Feedback in Laser Diodes Using Multilayered Broad-band Ultra-low Reflective Facets-coating

2020 ◽  
Vol 12 (2) ◽  
pp. 02030-1-02030-5
Author(s):  
Sanjay J. Patel ◽  
◽  
Akshay Jariwala ◽  
C. J. Panchal ◽  
Vipul Kheraj ◽  
...  
Keyword(s):  
Optical Feedback ◽  
Broad Band ◽  
Laser Diodes

Microwave modulation of laser diodes with optical feedback

1991 ◽  
Vol 9 (4) ◽  
pp. 468-476 ◽  
Author(s):  
J. Helms ◽  
K. Petermann
Keyword(s):  
Optical Feedback ◽  
Laser Diodes ◽  
Microwave Modulation

Multidimensional displacement sensor using the optical feedback of laser diodes

1992 ◽  
Author(s):  
Jun-ichi Kato ◽  
Ichirou Yamaguchi ◽  
Nobuhiko Kikuchi ◽  
Shigeo Ozono
Keyword(s):  
Optical Feedback ◽  
Laser Diodes ◽  
Displacement Sensor

Low‐frequency intensity fluctuation in laser diodes with external optical feedback

1981 ◽  
Vol 38 (4) ◽  
pp. 217-220 ◽  
Author(s):  
Masahiko Fujiwara ◽  
Keiichi Kubota ◽  
Roy Lang
Keyword(s):  
Intensity Fluctuation ◽  
Optical Feedback ◽  
Laser Diodes ◽  
Low Frequency ◽  
Frequency Intensity

InGaN/GaN/AiGaN-Based Laser Diodes with an Estimated Lifetime of Longer than 10,000 Hours

1997 ◽  
Vol 482 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
High Frequency ◽  
Continuous Wave ◽  
Optical Feedback ◽  
Laser Diodes ◽  
Continuous Wave Operation ◽  
Operating Current ◽  
Strained Layer Superlattice ◽  
Cladding Layers ◽  
Multi Quantum Well ◽  
Structure Laser

AbstractInGaN multi-quantum-well (MQW) structure laser diodes with A10.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN substrate were demonstrated to have an estimated lifetime of more than 10,000 hours under continuous-wave operation at 20°C. Under operation at a high temperature of 50°C, the lifetime was longer than 1,000 hours. The activation energy of the lifetime was estimated to be 0.5 eV. With the operating current increasing above the threshold, a self-pulsation with a high frequency of 3.5 GHz was observed. The relative intensity noise (RIN) less than -145 dB/Hz was obtained even at the 6% optical feedback using the high-frequency modulation of 600 MHz. The threshold carrier density of the InGaN MQW-structure LDs was estimated to be 3 × 1019/cm3 using a carrier lifetime of 1.8 ns.

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