Analysis of the lattice thermal resistivity due to the presence of electrons at low temperatures: Application to phosphorus-doped Ge

1981 ◽  
Vol 22 (1) ◽  
pp. 87-105
Author(s):  
K. S. Dubey
Keyword(s):  
Low Temperatures ◽  
Thermal Resistivity ◽  
Phosphorus Doped

The thermal conductivity of Ni 2 + doped KMgF 3 in a magnetic field at low temperatures: the effect of single ions and coupled pairs

1970 ◽  
Vol 315 (1523) ◽  
pp. 551-568 ◽  
Keyword(s):  
Magnetic Field ◽  
Thermal Conductivity ◽  
Elastic Constants ◽  
Low Temperatures ◽  
Coupling Constants ◽  
Thermal Resistivity ◽  
Paramagnetic Resonance ◽  
Spin Lattice ◽  
Average Spin ◽  
Lattice Coupling

The thermal conductivity between 0.4 and 4.2 K and in magnetic fields up to 50 kOe of KMgF 3 doped with Ni 2+ has been measured. The results are analysed to give values of the average spin-lattice coupling constants ( x Sl ) for the Ni 2+ ion. These are in agreement with values calculated using the magneto-elastic constants (GX1 and 6r44) derived from acoustic paramagnetic resonance (a.p.r.) experiments. Below IK the thermal resistivity as a function of magnetic field shows a number of anomalies, for which possible causes are discussed; it is concluded that they result from phonon interactions with exchange-coupled pairs of Ni 2+ ions. Such pairs are also observed in a.p.r. experiments.

Electrical and thermal resistivity of the transition elements at low temperatures

1959 ◽  
Vol 251 (995) ◽  
pp. 273-302 ◽  
Keyword(s):  
Electrical Resistivity ◽  
Transport Equation ◽  
Low Temperatures ◽  
Group Iv ◽  
Standard Theory ◽  
Thermal Resistivity ◽  
Transition Elements ◽  
Thermal Vibrations ◽  
The Ideal

The results of measurements on 20 transition elements are reported giving values for the thermal resistivity, W , from 2 to about 140 °K and for electrical resistivity, p , from 2 to about 300 °K. Values of the ‘ideal’ resistivities, W i and p i { (due to scattering of the electrons by thermal vibrations), are deduced from these and tabulated for various temperatures. Comparisons are made with values for Cu, Ag, Au and Na and with the predictions of the ‘standard’ theory, i.e. solutions of the transport equation developed by Bloch, Grüneisen, Wilson, etc. Excepting Mn, p i follows a Bloch—Grüneisen function tolerably down to op5, although slight anomalies are shown by V, Cr, Fe, Co and Ni; at low temperatures behaviour is varied but below 10 °K in Mn, Fe, Co, Ni, Pd, Pt and perhaps in W and Nb, p i appears to vary nearly as T<super>2</super>. The parameter, piM 6 & (at 273 °K) has rather similar values for different members of each group, e.g. for Ti, Zr and Hf of group IV A. The ideal thermal resistivity, Wif can generally be approximated by the relation, WiIW ao = 2(Tld)2J 5(dlT), although for many elements, W i falls more rapidly than T 2 below010. Measurements on the relatively poor conductors, e.g. Ti, Zr and Hf, suggest the presence of an appreciable lattice conductivity, which affects the confidence with which values can be deduced for W i in these elements.

Anharmonic thermal resistivity of dielectric crystals at low temperatures

1993 ◽  
Vol 48 (9) ◽  
pp. 6033-6042 ◽  
Author(s):  
Y.-J. Han ◽  
P. G. Klemens
Keyword(s):  
Low Temperatures ◽  
Thermal Resistivity

Photo-Hall measurements on phosphorus-doped n-type CVD diamond at low temperatures

2003 ◽  
Vol 199 (1) ◽  
pp. 82-86 ◽  
Author(s):  
Z. Remes ◽  
R. Kalish ◽  
C. Uzan-Saguy ◽  
E. Baskin ◽  
M. Nesládek ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Cvd Diamond ◽  
Hall Measurements ◽  
Phosphorus Doped

Annihilation Behavior of Planar Defects on Phosphorus-Doped Silicon at Low Temperatures

2017 ◽  
Vol 17 (5) ◽  
pp. 3370-3374
Author(s):  
Dong-Hyun Im ◽  
Yong In Kim ◽  
Myoungho Jeong ◽  
Kwang Wuk Park ◽  
Sung Kyu Kim ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Planar Defects ◽  
Doped Silicon ◽  
Phosphorus Doped
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