Ion beam induced enhancement of noble metal film adhesion on sapphire

1986 ◽  
Vol 5 (6) ◽  
pp. 659-661 ◽  
Author(s):  
K. R. Padmanabhan ◽  
J. Chevallier ◽  
G. Sørensen
Keyword(s):  
Noble Metal ◽  
Metal Film ◽  
Ion Beam ◽  
Film Adhesion

scholarly journals Micromachining of Free-Standing Metal Film Pipe Using a Focused Ion Beam.

1996 ◽  
Vol 62 (601) ◽  
pp. 3706-3711
Author(s):  
Yoshihiro MORI ◽  
Hitoshi TOKURA ◽  
Masanori YOSHIKAWA
Keyword(s):  
Metal Film ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Free Standing

Ion Beam Irradiation of Metal Films on SiO2

1983 ◽  
Vol 27 ◽  
Author(s):  
G. J. Clark ◽  
J. E. E. Baglin ◽  
F. M. d'Heurle ◽  
C. W. White ◽  
G. Farlow ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Processing ◽  
Metal Film ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Metal Films ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Lateral Transport ◽  
Metal Atoms

ABSTRACTIon beam irradiation of metal film/SiO2 interfaces causes reactions when the metals are those chemically capable of reducing SiO2. These reactions result in the formation of metal rich silicides in the region of the interface and an increase in the adhesion of the film to the substrate. For other nonreactive metals ion irradiation causes lateral transport of metal atoms resulting in the formation of an island structure. The results obtained by ion irradiation are compared with previous studies of high temperature thermal processing of metal films on SiO2.

Features of the effect of a high-power ion beam on metal film on carbon coating

2011 ◽  
Vol 5 (4) ◽  
pp. 647-649
Author(s):  
V. S. Kovivchak ◽  
T. V. Panova ◽  
R. B. Burlakov ◽  
N. A. Davletkildeev
Keyword(s):  
High Power ◽  
Metal Film ◽  
Carbon Coating ◽  
Ion Beam

Pulsed Ion Beam Induced Silicide Formation

1981 ◽  
Vol 39 ◽  
pp. 166-167
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Metal Film ◽  
Ion Beam ◽  
Radial Profile ◽  
Marx Generator ◽  
Silicide Formation ◽  
Thin Foils ◽  
Transmission Electron ◽  
Metal Silicides ◽  
Transmission Electron Microscope Study ◽  
Electron Microscopes

Metal silicides have found increasing use in microelectronic industry as contact material as well as interconnect between devices. Silicide formation is based on the reaction between metal film and substrate silicon. Thermal, laser, electron beam and ion-mixing induced silicide formation have been widely studied. Recently both scanning and pulsed ion beams have been used to anneal semiconductors. In this presentation, we report pulsed ion beam induced silicide formation.Ni films, 300 and 400 Å thick, were e-gun deposited on (001) oriented, 2 Ω-cm, n-type silicon with substrate temperature maintained at 150°C. A magnetically insulated diode driven by a Marx generator, constructed and run by J. Neri and D. Hammer of Laboratory for Plasma Studies at Cornell in conjunction with J. E. E. Baglin of IBM Research was used to produce pulsed proton and barium beams. Samples were irradiated with about 200 nsec, 200-300 keV, 10-100 A/cm2 ion pulses. A Gaussian-type radial profile was generally obtained. Thin foils for transmission electron microscope study were then chemically polished from silicon side. JEOL 100B and Siemens 102 electron microscopes were used to investigate microstructural changes.

Analysis of the extreme scattering effect for particles inside and above a noble metal film via the discrete sources method

2011 ◽  
Vol 14 (1) ◽  
pp. 015001 ◽  
Author(s):  
Elena Eremina ◽  
Yuri Eremin ◽  
Natalia Grishina ◽  
Thomas Wriedt
Keyword(s):  
Noble Metal ◽  
Metal Film ◽  
Discrete Sources Method ◽  
Scattering Effect

Analysis of light scattering in the evanescent waves area by a cylindrical nanohole in a noble-metal film

2008 ◽  
Vol 281 (13) ◽  
pp. 3581-3586 ◽  
Author(s):  
Elena Eremina ◽  
Yuri Eremin ◽  
Natalia Grishina ◽  
Thomas Wriedt
Keyword(s):  
Light Scattering ◽  
Noble Metal ◽  
Metal Film ◽  
Evanescent Waves
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