Slip lines and displacement paths of particles in a cohesionless medium

1971 ◽  
Vol 8 (6) ◽  
pp. 379-386 ◽  
Author(s):  
M. V. Malyshev
Keyword(s):  
1994 ◽  
Vol 19 (1) ◽  
pp. 29-38 ◽  
Author(s):  
H.-Y. Jeong ◽  
X.-W. Li ◽  
A.F. Yee ◽  
J. Pan

1993 ◽  
Vol 213 (1-2) ◽  
pp. 193-199 ◽  
Author(s):  
A. Andronov ◽  
I. Gordion ◽  
V. Kurin ◽  
I. Nefedov ◽  
I. Shereshevsky

1968 ◽  
Vol 11 (12) ◽  
pp. 103-104
Author(s):  
A. A. Vorob'ev ◽  
G. A. Doshchinskii
Keyword(s):  

Author(s):  
Zheng-Yan Yang ◽  
Xiao-Ming Zhang ◽  
Guang-Chao Nie ◽  
Dong Zhang ◽  
Han Ding

Abstract This study proposes a comprehensive experiment-based method to determine stress field and slip lines in metal cutting process. The chip geometry and workpiece's strain and strain rate fields are determined using an in-situ imaging technique. The two-dimensional (2D) heat transfer problem for the steady-state cutting process is solved to derive the cutting temperature, and the flow stresses of work material in the main deformation zone are calculated based on the plasticity theory. Furthermore, the stress field is comprehensively determined to satisfy the stress equilibrium, friction law along the tool-chip interface, and traction-free boundary condition along the uncut chip surface. In addition, slip lines in the main deformation zone are derived according to the direction of maximum shear stress without the assumption of perfect rigid-plastic material. The proposed method is validated by comparing the cutting forces calculated based on the obtained stress field with the experimentally measurements.


2009 ◽  
pp. 853-853-6
Author(s):  
Fricke WG
Keyword(s):  

1991 ◽  
Vol 224 ◽  
Author(s):  
A. Usami ◽  
H. Shiraki ◽  
H. Fujiwara ◽  
R. Abe ◽  
N. Osamura ◽  
...  

AbstractThe slip lines introduced in Si wafers during rapid thermal processing (RTP) were revealed with focused reflectance microwave probe (RMP) method. The signal intensity of RMP which is related to optically injected excess carrier concentration decreases at slip lines. The region in which the signal intensity decreased is in good agreement with results of X-ray topography and theoretical analysis considering thermal stress caused by temperature drop at the wafer periphery during RTP. According these results, it is considered that carrier lifetime is decreased by slip dislocations which are effective recombination centers.


1985 ◽  
Vol 35 (8) ◽  
pp. 897-900 ◽  
Author(s):  
B. Sprušil ◽  
F. Hnilica

1995 ◽  
Vol 10 (9) ◽  
pp. 2159-2161 ◽  
Author(s):  
J.H. Schneibel ◽  
L. Martínez

Fe–40 at. % Al–0.1 at. % B specimens were polished flat, strained at room temperature, and examined in an atomic force microscope. The angles of height contours perpendicular to the slip lines were interpreted as shear strains and were statistically evaluated. The frequency distributions of these shear strains correlated well with the macroscopic strains. The maximum shear strains found were not much larger than the macroscopic strains. In particular, no steep slip steps corresponding to large local shears were found.


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