Test measurements with a perfect crystal neutron interferometer

1974 ◽  
Vol 271 (2) ◽  
pp. 177-182 ◽  
Author(s):  
W. Bauspiess ◽  
U. Bonse ◽  
H. Rauch ◽  
W. Treimer
Keyword(s):  
Perfect Crystal ◽  
Neutron Interferometer

Perfect crystal neutron interferometer set up at BENSC and first experimental results

1995 ◽  
Vol 213-214 ◽  
pp. 839-841
Author(s):  
T. Baranova ◽  
G. Drabkin ◽  
A. Ioffe ◽  
S. Kirsanov ◽  
F. Mezei ◽  
...  
Keyword(s):  
Perfect Crystal ◽  
Experimental Results ◽  
Neutron Interferometer ◽  
Set Up

Bayesian removal of noise for increased sensitivity in vector pattern recognition lattice imaging of interfaces

1993 ◽  
Vol 51 ◽  
pp. 994-995
Author(s):  
L. Fei ◽  
P. Fraundorf
Keyword(s):  
Pattern Recognition ◽  
Perfect Crystal ◽  
Unit Cell ◽  
Ion Milling ◽  
Beam Radiation ◽  
Major Interest ◽  
Unit Cells ◽  
Mapping Process ◽  
Increased Sensitivity ◽  
Electron Microscopes

Interface structure is of major interest in microscopy. With high resolution transmission electron microscopes (TEMs) and scanning probe microscopes, it is possible to reveal structure of interfaces in unit cells, in some cases with atomic resolution. A. Ourmazd et al. proposed quantifying such observations by using vector pattern recognition to map chemical composition changes across the interface in TEM images with unit cell resolution. The sensitivity of the mapping process, however, is limited by the repeatability of unit cell images of perfect crystal, and hence by the amount of delocalized noise, e.g. due to ion milling or beam radiation damage. Bayesian removal of noise, based on statistical inference, can be used to reduce the amount of non-periodic noise in images after acquisition. The basic principle of Bayesian phase-model background subtraction, according to our previous study, is that the optimum (rms error minimizing strategy) Fourier phases of the noise can be obtained provided the amplitudes of the noise is given, while the noise amplitude can often be estimated from the image itself.

Calculation of many-beam dynamic electron diffraction without high-energy approximation

1996 ◽  
Vol 54 ◽  
pp. 128-129
Author(s):  
B. R. Ahn ◽  
N. J. Kim
Keyword(s):  
Electron Diffraction ◽  
Flat Surface ◽  
Dynamic Theory ◽  
High Energy ◽  
Perfect Crystal ◽  
Zone Axis ◽  
Beam Dynamic ◽  
Diffraction Angle ◽  
Energy Approximation ◽  
The Many

High energy approximation in dynamic theory of electron diffraction involves some intrinsic problems. First, the loss of theoretical strictness makes it difficult to comprehend the phenomena of electron diffraction. Secondly, it is difficult to believe that the approximation is reasonable especially in the following cases: 1) when accelerating voltage is not sufficiently high, 2) when the specimen is thick, 3) when the angle between the surface normal of the specimen and zone axis is large, and 4) when diffracted beam with large diffraction angle is included in the calculation. However, until now the method to calculate the many beam dynamic electron diffraction without the high energy approximation has not been proposed. For this reason, the authors propose a method to eliminate the high energy approximation in the calculation of many beam dynamic electron diffraction. In this method, a perfect crystal with flat surface was assumed. The method was applied to the calculation of [111] zone axis CBED patterns of Si.

Simulation and Contrast Analysis of tem Images of Cracks

1990 ◽  
Vol 48 (1) ◽  
pp. 578-579
Author(s):  
D. Goyal ◽  
A. H. King
Keyword(s):  
Displacement Vector ◽  
Crack Tip ◽  
Perfect Crystal ◽  
Operating Conditions ◽  
Displacement Fields ◽  
Fringe Contrast ◽  
Orthogonal Geometry ◽  
Moire Fringe ◽  
Moiré Fringe

TEM images of cracks have been found to give rise to a moiré fringe type of contrast. It is apparent that the moire fringe contrast is observed because of the presence of a fault in a perfect crystal, and is characteristic of the fault geometry and the diffracting conditions in the TEM. Various studies have reported that the moire fringe contrast observed due to the presence of a crack in an otherwise perfect crystal is distinctive of the mode of crack. This paper describes a technique to study the geometry and mode of the cracks by comparing the images they produce in the TEM because of the effect that their displacement fields have on the diffraction of electrons by the crystal (containing a crack) with the corresponding theoretical images. In order to formulate a means of matching experimental images with theoretical ones, displacement fields of dislocations present (if any) in the vicinity of the crack are not considered, only the effect of the displacement field of the crack is considered.The theoretical images are obtained using a computer program based on the two beam approximation of the dynamical theory of diffraction contrast for an imperfect crystal. The procedures for the determination of the various parameters involved in these computations have been well documented. There are three basic modes of crack. Preliminary studies were carried out considering the simplest form of crack geometries, i. e., mode I, II, III and the mixed modes, with orthogonal crack geometries. It was found that the contrast obtained from each mode is very distinct. The effect of variation of operating conditions such as diffracting vector (), the deviation parameter (ω), the electron beam direction () and the displacement vector were studied. It has been found that any small change in the above parameters can result in a drastic change in the contrast. The most important parameter for the matching of the theoretical and the experimental images was found to be the determination of the geometry of the crack under consideration. In order to be able to simulate the crack image shown in Figure 1, the crack geometry was modified from a orthogonal geometry to one with a crack tip inclined to the original crack front. The variation in the crack tip direction resulted in the variation of the displacement vector also. Figure 1 is a cross-sectional micrograph of a silicon wafer with a chromium film on top, showing a crack in the silicon.

Sign in / Sign up

Export Citation Format

Share Document