Rapid determination of fatigue limit for wrought heat-resistant alloys

1987 ◽  
Vol 19 (11) ◽  
pp. 1531-1534
Author(s):  
A. V. Zheldubovskii
Metals ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 677 ◽  
Author(s):  
Mauro Ricotta ◽  
Giovanni Meneghetti ◽  
Bruno Atzori ◽  
Giacomo Risitano ◽  
Antonino Risitano

This paper regards the rapid determination of fatigue limit by using thermal data analysis. Different approaches available in the literature to estimate the fatigue limit of cold-drawn AISI 304L bars are analyzed and compared, namely, temperature- and energy-based methods. Among the temperature-based approaches, the Risitano Method (RM) and the method based on material temperature evolution recorded during a static tensile test were analyzed. Regarding the energy-based approaches, the input mechanical energy density stored in the material per cycle (i.e., the area of the hysteresis loop), the heat energy dissipated by the material to the surroundings per cycle, and the “2nd-harmonic-based” methods were considered. It was found that for the material analyzed, all the considered energy-based approaches provided a very good engineering estimation of the material fatigue limit compared to a staircase test.


1962 ◽  
Vol 11 (3) ◽  
pp. 312-317 ◽  
Author(s):  
Masao KAWAHATA ◽  
Heiichi MOCHIZUKI ◽  
Rokuro KAJIYAMA ◽  
Kazuma IRIKURA

2017 ◽  
Vol 58 (2) ◽  
pp. 259-267 ◽  
Author(s):  
S. Chhith ◽  
W. De Waele ◽  
P. De Baets

1962 ◽  
Vol 11 (3) ◽  
pp. 317-321 ◽  
Author(s):  
Masao KAWAHATA ◽  
Heiichi MOCHIZUKI ◽  
Rokuro KAJIYAMA ◽  
Kazuma TRIKURA

Author(s):  
T. Y. Tan ◽  
W. K. Tice

In studying ion implanted semiconductors and fast neutron irradiated metals, the need for characterizing small dislocation loops having diameters of a few hundred angstrom units usually arises. The weak beam imaging method is a powerful technique for analyzing these loops. Because of the large reduction in stacking fault (SF) fringe spacing at large sg, this method allows for a rapid determination of whether the loop is faulted, and, hence, whether it is a perfect or a Frank partial loop. This method was first used by Bicknell to image small faulted loops in boron implanted silicon. He explained the fringe spacing by kinematical theory, i.e., ≃l/(Sg) in the fault fringe in depth oscillation. The fault image contrast formation mechanism is, however, really more complicated.


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