Volume photodeposition processes in amorphous selenium hydrosols

1984 ◽  
Vol 262 (10) ◽  
pp. 817-820 ◽  
Author(s):  
A. Peled
Keyword(s):  
Author(s):  
V. I. Mikla ◽  
I. P. Mikhalko ◽  
V. V. Mikla ◽  
Yu. Yu. Nagy

2015 ◽  
Vol 11 (1) ◽  
pp. 2914-2917
Author(s):  
Alekberov R.I ◽  
Mekhtiyeva S.I ◽  
Isayev A.I ◽  
Mammadova H.I.

In work investigated with method IR of spectroscopy of amorphous selenium andsystem Se95As5 containing impurity samarium. It is certain that, in IR a spectrum of amorphous selenium due to hypervalent defects maxima with different intensity are observed in 230 and 270 cm-1.Increase of the concentration of impurity samarium in spectrum Se95As5, the maximum arises with 400cm-1frequency which, are connected with SmSe3 structural elements.


1979 ◽  
Vol 53 (1) ◽  
pp. 339-350 ◽  
Author(s):  
G. Jones ◽  
R. A. Collins

2021 ◽  
Vol 154 (7) ◽  
pp. 074703
Author(s):  
Jaroslav Barták ◽  
Jirí Málek ◽  
Kushal Bagchi ◽  
M. D. Ediger ◽  
Yuhui Li ◽  
...  

2008 ◽  
Vol 1066 ◽  
Author(s):  
Kyung-Wook Shin ◽  
Mohammad R. Esmaeili-Rad ◽  
Andrei Sazonov ◽  
Arokia Nathan

ABSTRACTHydrogenated nanocrystalline silicon (nc-Si:H) has strong potential to replace the hydrogenated amorphous silicon (a-Si:H) in thin film transistors (TFTs) due to its compatibility with the current industrial a-Si:H processes, and its better threshold voltage stability [1]. In this paper, we present an experimental TFT array backplane for direct conversion X-ray detector, using inverted staggered bottom gate nc-Si:H TFT as switching element. The TFTs employed a nc-Si:H/a-Si:H bilayer as the channel layer and hydrogenated amorphous silicon nitride (a-SiNx) as the gate dielectric; both layers deposited by plasma enhanced chemical vapor deposition (PECVD) at 280°C. Each pixel consists of a switching TFT, a charge storage capacitor (Cpx), and a mushroom electrode which serves as the bottom contact for X-ray detector such as amorphous selenium photoconductor. The chemical composition of the a-SiNx was studied by Fourier transform infrared spectroscopy. Current-voltage measurements of the a-SiNx film demonstrate that a breakdown field of 4.3 MV/cm.. TFTs in the array exhibits a field effect mobility (μEF) of 0.15 cm2/V·s, a threshold voltage (VTh) of 5.71 V, and a subthreshold leakage current (Isub) of 10−10 A. The fabrication sequence and TFT characteristics will be discussed in details.


2016 ◽  
Vol 119 (2) ◽  
pp. 024508 ◽  
Author(s):  
James R. Scheuermann ◽  
Yesenia Miranda ◽  
Hongyu Liu ◽  
Wei Zhao

2001 ◽  
Vol 142 (1-3) ◽  
pp. 295-299 ◽  
Author(s):  
Kazuma Nakamura ◽  
Atushi Ikawa

1977 ◽  
Vol 41 (2) ◽  
pp. K189-K192 ◽  
Author(s):  
R. M. Mehra ◽  
P. C. Mathur ◽  
A. K. Kathuria ◽  
Radhey Shyam

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