On the theory of photoadsorption kinetics of a-Se colloids: The thermal activation energy and compensation effect

1988 ◽  
Vol 266 (10) ◽  
pp. 958-964 ◽  
Author(s):  
A. Peled ◽  
D. Naot ◽  
M. Perakh
Keyword(s):  
Activation Energy ◽  
Thermal Activation ◽  
Compensation Effect ◽  
Thermal Activation Energy ◽  
Kinetics Of

The photolysis of solid potassium azide

1952 ◽  
Vol 215 (1121) ◽  
pp. 254-265 ◽  
Keyword(s):  
Activation Energy ◽  
Potassium Salt ◽  
Thermal Activation ◽  
Thermal Activation Energy ◽  
Experimental Measurements ◽  
Ionic Conductance ◽  
Potassium Azide ◽  
Cation Sites ◽  
Kinetics Of

Experimental measurements of photoconductance in potassium and barium azides and of the kinetics of photolysis of the potassium salt are reported. The theory previously advanced to explain the photodecomposition of barium azide is confirmed and extended by a calculation of the probable lifetime of a trapped exciton. Ionic conductance measurements enable the exciton traps to be identified with vacant cation sites and it is pointed out that the thermal activation energy required for the decomposition of the double trapped excitons is governed by steric considerations.

About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

2018 ◽  
Vol 924 ◽  
pp. 333-338 ◽  
Author(s):  
Roberta Nipoti ◽  
Alberto Carnera ◽  
Giovanni Alfieri ◽  
Lukas Kranz
Keyword(s):  
Activation Energy ◽  
Sheet Resistance ◽  
Annealing Time ◽  
Thermal Activation ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Activation Energy ◽  
Electrical Activation ◽  
Temperature Range ◽  
Annealing Temperatures

The electrical activation of 1×1020cm-3implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching stationary electrical at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.

Temperature/Doping-Dependency of the Electrical Properties of the Nickel Doped Copper Oxide Thin Films

2021 ◽  
Vol 16 (2) ◽  
pp. 163-169
Author(s):  
Alaa Y. Mahmoud ◽  
Wafa A. Alghameeti ◽  
Fatmah S. Bahabri
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Thermal Activation ◽  
Doping Concentration ◽  
Energy Gap ◽  
Cupric Oxide ◽  
Electrical Energy ◽  
Thermal Activation Energy ◽  
Ni Doping

The electrical properties of the Nickel doped cupric oxide Ni-CuO thin films with various doping concentrations of Ni (0, 20, 30, 70, and 80%) are investigated at two different annealing temperatures; 200 and 400 °C. The electrical properties of the films; namely thermal activation energy and electrical energy gap are calculated and compared. We find that for the non-annealed Ni-CuO films, both thermal activation energy and electrical energy gap are decreased by increasing the doping concentration, while for the annealed films, the increase in the Ni doping results in the increase in thermal activation energy and electrical energy gap for most of the Ni-CuO films. We also observe that for a particular concentration, the annealing at 200 °C produces lower thermal activation energy and electrical energy gap than the annealing at 400 °C. We obtained two values of the activation energy varying from -5.52 to -0.51 eV and from 0.49 to 3.36 eV, respectively, for the annealing at 200 and 400 °C. We also obtained two values of the electrical bandgap varying from -11.05 to -1.03 eV and from 0.97 to 6.71 eV, respectively, for the annealing at 200 and 400 °C. It is also noticeable that the increase in the doping concentration reduces the activation energy, and hence the electrical bandgap energies.

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