Effect of a charge layer on the plasmon-polariton dispersion curve in doped semiconductor superlattices

1990 ◽  
Vol 80 (2) ◽  
pp. 207-211 ◽  
Author(s):  
G. A. Farias ◽  
M. M. Auto ◽  
E. L. Albuquerque ◽  
P. Fulco
Keyword(s):  
Dispersion Curve ◽  
Semiconductor Superlattices ◽  
Charge Layer ◽  
Plasmon Polariton ◽  
A Charge

Effect of a charge layer on the surface-plasmon-polariton dispersion curve

1974 ◽  
Vol 10 (8) ◽  
pp. 3342-3355 ◽  
Author(s):  
S. L. Cunningham ◽  
A. A. Maradudin ◽  
R. F. Wallis
Keyword(s):  
Dispersion Curve ◽  
Surface Plasmon ◽  
Surface Plasmon Polariton ◽  
Charge Layer ◽  
Plasmon Polariton ◽  
A Charge

Modeling of Physical and Chemical Processes of Anodic Bonding Technology

2014 ◽  
Vol 1040 ◽  
pp. 513-518 ◽  
Author(s):  
N.S. Pshchelko ◽  
M.P. Sevryugina
Keyword(s):  
Electric Fields ◽  
Chemical Processes ◽  
Anodic Bonding ◽  
Charge Accumulation ◽  
Charge Layer ◽  
Bonding Technology ◽  
Time Required ◽  
A Charge ◽  
Physical And Chemical ◽  
Kinetics Of

Modeling ideas of physical and chemical processes when using an anodic bonding for materials connection are developed. The kinetics of a charge accumulation in an electrode region in a dielectric is considered. The thickness of a charge layer, electric fields strength and value of the ponderomotive pressure providing connection of materials are calculated. It is shown that the necessary ponderomotive pressure resulting in a dielectric-to-conductor seal is normally about ten MPa and the time required is about ten minutes.

Plasma oscillation of a charge layer at an insulator surface

1976 ◽  
Vol 13 (7) ◽  
pp. 2859-2864 ◽  
Author(s):  
D. E. Beck ◽  
P. Kumar
Keyword(s):  
Plasma Oscillation ◽  
Insulator Surface ◽  
Charge Layer ◽  
A Charge

Metastable Electronic Effects in Amorphous Semiconductor Superlattices

1989 ◽  
Vol 160 ◽  
Author(s):  
J. Kakalios
Keyword(s):  
Scattering Length ◽  
Lattice Relaxation ◽  
Amorphous Semiconductor ◽  
Amorphous Semiconductors ◽  
Electronic Effects ◽  
Semiconductor Superlattices ◽  
Quantum Size ◽  
In Doping ◽  
Dx Center ◽  
A Charge

AbstractThis paper reviews some of the novel electronic effects observed in amorphous semiconductor superlattices. Quantum size effects have been reported in compositionally modulated amorphous semiconductors based upon optical absorption and tunneling studies. However, the quantum well effects are in direct conflict with transport data estimates of the inelastic scattering length. In doping modulated amorphous semiconductors, a large persistent photoconductivity PPC is observed, which cannot be explained by the field separation model alone, but rather requires the presence of a defect which undergoes a large lattice relaxation upon trapping a charge (similar to the DX center). Studies of npnp amorphous silicon multilayers have enabled a microscopic determination of the process responsible for PPC.

The formation of a charge layer at the interface of GaMnAs and an organic material

2009 ◽  
Vol 88 (4) ◽  
pp. 46002 ◽  
Author(s):  
Wenjin Chen ◽  
Baikui Li ◽  
Hongtao He ◽  
Jiannong Wang ◽  
Hoi Lam Tam ◽  
...  
Keyword(s):  
Organic Material ◽  
Charge Layer ◽  
A Charge

Electromelting fluorine glass under a charge layer

1979 ◽  
Vol 36 (3) ◽  
pp. 124-127
Author(s):  
A. T. Dymov ◽  
V. M. Budov ◽  
N. A. Spirina
Keyword(s):  
Charge Layer ◽  
A Charge ◽  
Fluorine Glass

Cortical Mapping of EEG Alpha Power Using a Charge Layer Model

2004 ◽  
Vol 17 (2) ◽  
pp. 65-71 ◽  
Author(s):  
Dezhong Yao ◽  
Li Wang ◽  
Kim Dremstrup Nielsen ◽  
Lars Arendt-Nielsen ◽  
Andrew C.N. Chen
Keyword(s):  
Cortical Mapping ◽  
Alpha Power ◽  
Layer Model ◽  
Charge Layer ◽  
Eeg Alpha ◽  
A Charge
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