Time and temperature dependence of the specific heat of non-crystalline solids within the tunneling model

1989 ◽  
Vol 76 (3) ◽  
pp. 283-288 ◽  
Author(s):  
Martin Deye ◽  
Pablo Esquinazi
Keyword(s):  
Specific Heat ◽  
Temperature Dependence ◽  
Crystalline Solids ◽  
Tunneling Model

scholarly journals Temperature dependence of the specific heat and thermodynamic functions AК1М2 alloy, doped strontium

2019 ◽  
Vol 21 (1) ◽  
pp. 35-42 ◽  
Author(s):  
I. N. Ganiev ◽  
S. E. Otajonov ◽  
N. F. Ibrohimov ◽  
M. Mahmudov
Keyword(s):  
Heat Capacity ◽  
Gibbs Energy ◽  
Specific Heat ◽  
Temperature Dependence ◽  
Specific Heat Capacity ◽  
Thermodynamic Functions ◽  
Inverse Relationship ◽  
Alloying Element ◽  
Enthalpy And Entropy ◽  
Increasing Temperature

In the heat «cooling» investigated the temperature dependence of the specific heat capacity and thermodynamic functions doped strontium alloy AK1М2 in the range 298,15—900 K. Mathematical models are obtained that describe the change in these properties of alloys in the temperature range 298.15—900 K, as well as on the concentration of the doping component. It was found that with increasing temperature, specific heat capacity, enthalpy and entropy alloys increase, and the concentration up to 0.5 wt.% of the alloying element decreases. Gibbs energy values have an inverse relationship, i.e., temperature — decreases the content of alloying component — is up to 0.5 wt.% growing.

Temperature Dependence of the Specific Heat and the Changes in the Thermodynamic Functions of a Bismuth-Bearing AZh4.5 Alloy

2020 ◽  
Vol 2020 (1) ◽  
pp. 17-24 ◽  
Author(s):  
I. N. Ganiev ◽  
A. G. Safarov ◽  
F. R. Odinaev ◽  
U. Sh. Yakubov ◽  
K. Kabutov
Keyword(s):  
Specific Heat ◽  
Temperature Dependence ◽  
Thermodynamic Functions

Size and temperature dependence of the specific heat capacity of carbon nanotubes

2006 ◽  
Vol 600 (18) ◽  
pp. 3633-3636 ◽  
Author(s):  
S.P. Hepplestone ◽  
A.M. Ciavarella ◽  
C. Janke ◽  
G.P. Srivastava
Keyword(s):  
Carbon Nanotubes ◽  
Heat Capacity ◽  
Specific Heat ◽  
Temperature Dependence ◽  
Specific Heat Capacity

Temperature dependence of the normal state specific heat of κ-(BEDT-TTF)2Cu(NCS)2

1999 ◽  
Vol 103 (1-3) ◽  
pp. 2080 ◽  
Author(s):  
Nathanael A. Fortune ◽  
Guruswamy Rajaram ◽  
Keizo Murata
Keyword(s):  
Specific Heat ◽  
Temperature Dependence ◽  
Normal State

scholarly journals Temperature dependence of optical linewidths and specific heat of rare-earth-doped silicate glasses

1993 ◽  
Vol 71 (18) ◽  
pp. 3031-3034 ◽  
Author(s):  
Th. Schmidt ◽  
J. Baak ◽  
D. A. van de Straat ◽  
H. B. Brom ◽  
S. Völker
Keyword(s):  
Rare Earth ◽  
Specific Heat ◽  
Temperature Dependence ◽  
Silicate Glasses ◽  
Rare Earth Doped

Temperature-Dependence Study of the Gate Current SiO2/4H-SiC MOS Capacitors

2018 ◽  
Vol 924 ◽  
pp. 473-476
Author(s):  
Patrick Fiorenza ◽  
Marilena Vivona ◽  
Ferdinando Iucolano ◽  
Andrea Severino ◽  
Simona Lorenti ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Barrier Height ◽  
Conduction Band ◽  
Oxide Semiconductor ◽  
Conduction Band Edge ◽  
Semiconductor Interface ◽  
Tunneling Model ◽  
Mos Capacitors ◽  
Gate Current

We present a temperature-dependence electrical characterization of the oxide/semiconductor interface in MOS capacitors with a SiO2layer deposited on 4H-SiC using dichlorosilane and nitrogen-based vapor precursors. The post deposition annealing process in N2O allowed to achieve an interface state density Dit 9.0×1011cm-2eV-1below the conduction band edge. At room temperature, an electron barrier height (conduction band offset) of 2.8 eV was measured using the standard Fowler-Nordheim tunneling model. The electron conduction through the SiO2insulating layer was evaluated by studying the experimental temperature dependence of the gate current. In particular, the Fowler-Nordheim electron barrier height showed a negative temperature coefficient (dφB/dT= - 0.98 meV/°C), which is very close to the expected value for an ideal SiO2/4H-SiC system. This result, obtained for deposited SiO2layers, is an improvement compared to the values of the temperature coefficient of the Fowler-Nordheim electron barrier height reported for thermally grown SiO2. In fact, the smaller dependence ofφBon the temperature observed in this work represents a clear advantage of our deposited SiO2for the operation of MOSFET devices at high temperatures.

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