Analysis of anisotropic electrical resistivity and fluctuation conductivity of YBa2Cu3O7?? single crystals

1989 ◽  
Vol 77 (1) ◽  
pp. 11-16 ◽  
Author(s):  
G. Weigang ◽  
K. Winzer
Keyword(s):  
Electrical Resistivity ◽  
Single Crystals ◽  
Fluctuation Conductivity

Electrical resistivity of NpAs2 single crystals

Physica B+C ◽  
1985 ◽  
Vol 130 (1-3) ◽  
pp. 102-105 ◽  
Author(s):  
P.G. Thérond ◽  
A. Blaise ◽  
J.M. Fournier ◽  
J. Chiapusio ◽  
J.P. Charvillat ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Single Crystals

The effects of sulfuric acid on the creep, recrystallization, and electrical properties of ice

2003 ◽  
Vol 81 (1-2) ◽  
pp. 395-400 ◽  
Author(s):  
D Iliescu ◽  
I Baker ◽  
X Li
Keyword(s):  
Electrical Resistivity ◽  
Sulfuric Acid ◽  
Single Crystals ◽  
Equal Channel Angular Extrusion ◽  
Boundary Migration ◽  
Constant Load ◽  
Tensile Creep ◽  
Grain Boundary Migration ◽  
Resistivity Measurements ◽  
Lower Resistivity

Both constant load creep and recrystallization are investigated using single crystals of 70–170 ppb sulfuric-acid-doped and -undoped ice. Both sets of crystals exhibited strains in excess of 200% under tensile creep. The undoped specimens reached these strains roughly twice as fast as the doped specimens. After large local strains were imparted to cuboidal single crystals using equal channel angular extrusion at –2°C and subsequent annealing at the same temperature, recrystallization occurred. It was found that a higher concentration of H2SO4 retarded both recrystallization and the subsequent grain-boundary migration. Direct current electrical resistivity measurements performed on polycrystalline, sulfuric-acid-doped (3 ppm) ice at –10°C showed a much lower resistivity in the grain boundaries than in the lattice. PACS No.: 81.90

Out-of-plane electrical resistivity for underdoped Bi2Sr1.6La0.4CuO6+δ single crystals in magnetic field

2000 ◽  
Vol 281-282 ◽  
pp. 926-927 ◽  
Author(s):  
T Akazawa ◽  
H Ikeda ◽  
N Ozawa ◽  
H Kouno ◽  
R Yoshizaki
Keyword(s):  
Magnetic Field ◽  
Electrical Resistivity ◽  
Single Crystals ◽  
Out Of Plane

scholarly journals Possible causes of electrical resistivity distribution inhomogeneity in Czochralski grown single crystal silicon

2019 ◽  
Vol 5 (1) ◽  
pp. 27-32 ◽  
Author(s):  
Svetlana P. Kobeleva ◽  
Ilya M. Anfimov ◽  
Vladimir S. Berdnikov ◽  
Tatyana V. Kritskaya
Keyword(s):  
Electrical Resistivity ◽  
Single Crystal ◽  
Single Crystals ◽  
Crystallization Front ◽  
Single Crystal Silicon ◽  
Theoretical Interpretation ◽  
Azimuthal Direction ◽  
Crystal Silicon ◽  
Wide Range ◽  
Possible Cause

Electrical resistivity distribution maps have been constructed for single crystal silicon wafers cut out of different parts of Czochralski grown ingots. The general inhomogeneity of the wafers has proven to be relatively high, the resistivity scatter reaching 1–3 %. Two electrical resistivity distribution inhomogeneity types have been revealed: azimuthal and radial. Experiments have been carried out for crystal growth from transparent simulating fluids with hydrodynamic and thermophysical parameters close to those for Czochralski growth of silicon single crystals. We show that a possible cause of azimuthal electrical resistivity distribution inhomogeneity is the swirl-like structure of the melt under the crystallization front (CF), while a possible cause of radial electrical resistivity distribution inhomogeneity is the CF curvature. In a specific range of the Grashof, Marangoni and Reynolds numbers which depend on the ratio of melt height and growing crystal radius, a system of well-developed radially oriented swirls may emerge under the rotating CF. In the absence of such swirls the melt is displaced from under the crystallization front in a homogeneous manner to form thermal and concentration boundary layers which are homogeneous in azimuthal direction but have clear radial inhomogeneity. Once swirls emerge the melt is displaced from the center to the periphery, and simultaneous fluid motion in azimuthal direction occurs. The overall melt motion becomes helical as a result. The number of swirls (two to ten) agrees with the number of azimuthally directed electrical resistivity distribution inhomogeneities observed in the experiments. Comparison of numerical simulation results in a wide range of Prandtl numbers with the experimental data suggests that the phenomena observed in transparent fluids are universal and can be used for theoretical interpretation of imperfections in silicon single crystals.

scholarly journals Spindigtheidsgolfgedrag van Cr-Si- en Cr-Ga-allooi-enkelkristalle

2000 ◽  
Vol 19 (1) ◽  
pp. 21-22
Author(s):  
A. R. E. Prinsloo
Keyword(s):  
Electrical Resistivity ◽  
Thermal Expansion ◽  
Phase Diagrams ◽  
Single Crystals ◽  
Spin Density ◽  
Ultrasonic Wave ◽  
Magnetic Phase ◽  
Density Wave ◽  
Spin Density Wave ◽  
Velocity Measurements

The spin-density-wave (SDW) effects in Cr-Si and Cr-Ga alloy single crystals were investigated by means of thermal expansion, electrical resistivity and ultrasonic wave velocity measurements. The complete temperature-concentration and temperature-pressure magnetic phase diagrams of Cr-Ga were constructed.

Effect of high pressure on various diffusion mechanisms in oxygen-deficient ReBa2Cu3O7−x (Re = Y, Ho) single crystals

2019 ◽  
Vol 33 (04) ◽  
pp. 1950039
Author(s):  
G. Ya. Khadzhai ◽  
N. R. Vovk ◽  
R. V. Vovk ◽  
I. L. Goulatis ◽  
O. V. Dobrovolskiy
Keyword(s):  
High Pressure ◽  
Electrical Resistivity ◽  
Hydrostatic Pressure ◽  
Single Crystals ◽  
High Hydrostatic Pressure ◽  
Room Temperature ◽  
Diffusion Mechanisms ◽  
Diffusion Coalescence

The effect of high hydrostatic pressure on the relaxation of the electrical resistivity at room temperature of oxygen-nonstoichiometric [Formula: see text] (Re = Y, Ho) single crystals is investigated. The application of hydrostatic pressure has been revealed to significantly intensify the process of diffusion coalescence in the oxygen subsystem. At the same time, the intensity of the redistribution of labile oxygen is significantly changed when yttrium is replaced by holmium.

Fluctuation conductivity analysis for Bi2Sr2(Ca1−xYx)Cu2O8+δ single crystals in both overdoped and underdoped regimes

2007 ◽  
Vol 463-465 ◽  
pp. 126-130 ◽  
Author(s):  
Tatsunori Aoki ◽  
Yasushi Oikawa ◽  
Changman Kim ◽  
Takashi Tamura ◽  
Hajime Ozaki ◽  
...  
Keyword(s):  
Single Crystals ◽  
Fluctuation Conductivity
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