scholarly journals Importance of long-range electron-phonon coupling in high-T c superconductors

1991 ◽  
Vol 85 (2) ◽  
pp. 315-315 ◽  
Author(s):  
R. Zeyher
1984 ◽  
Vol 52 (23) ◽  
pp. 2073-2076 ◽  
Author(s):  
S. Andersson ◽  
B. N. J. Persson ◽  
M. Persson ◽  
N. D. Lang

1997 ◽  
Vol 11 (30) ◽  
pp. 1303-1312 ◽  
Author(s):  
P. Quémerais ◽  
S. Fratini

Considering the long range Coulomb interactions between large polarons in dielectrics, we propose a model for their crystallization when no bipolarons are formed. As the density increases, the melting is examined at T=0 K. One possibility is the delocalization towards a liquid state of polarons. However, we show that this cannot happen if the electron-phonon coupling is larger than some critical value. The other competing mechanism is the dissociation of the polarons themselves, favored owing to their large mass at strong coupling. Finally, we propose a phase diagram for the insulator-to-metal transition as a function of the density and electron–phonon coupling.


2012 ◽  
Vol 11 (8) ◽  
pp. 675-681 ◽  
Author(s):  
N. Driza ◽  
S. Blanco-Canosa ◽  
M. Bakr ◽  
S. Soltan ◽  
M. Khalid ◽  
...  

1999 ◽  
Vol 13 (29n31) ◽  
pp. 3525-3527 ◽  
Author(s):  
T. Jarlborg

The electronic part of the electron-phonon coupling, λ, in pure and Nb-doped SrTiO 3 has been calculated using the LMTO method. Supercells and the virtual crystal approximation has been used to treat the cases with dilute Nb-doping. It is found that the long-range part of the coupling is only weakly screened for low doping, when the material is close to be insulating. This makes the low-q part of λ large and can explain the appearance of superconductivity for low Nb concentration.


2021 ◽  
Vol 12 (6) ◽  
pp. 1690-1695
Author(s):  
Zhongyu Liu ◽  
Yingwei Li ◽  
Wonyong Shin ◽  
Rongchao Jin

2021 ◽  
Vol 103 (2) ◽  
Author(s):  
I.Yu. Sklyadneva ◽  
R. Heid ◽  
P. M. Echenique ◽  
E. V. Chulkov

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Rui Su ◽  
Zhaojian Xu ◽  
Jiang Wu ◽  
Deying Luo ◽  
Qin Hu ◽  
...  

AbstractThe performance of perovskite photovoltaics is fundamentally impeded by the presence of undesirable defects that contribute to non-radiative losses within the devices. Although mitigating these losses has been extensively reported by numerous passivation strategies, a detailed understanding of loss origins within the devices remains elusive. Here, we demonstrate that the defect capturing probability estimated by the capture cross-section is decreased by varying the dielectric response, producing the dielectric screening effect in the perovskite. The resulting perovskites also show reduced surface recombination and a weaker electron-phonon coupling. All of these boost the power conversion efficiency to 22.3% for an inverted perovskite photovoltaic device with a high open-circuit voltage of 1.25 V and a low voltage deficit of 0.37 V (a bandgap ~1.62 eV). Our results provide not only an in-depth understanding of the carrier capture processes in perovskites, but also a promising pathway for realizing highly efficient devices via dielectric regulation.


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