Coulomb effects in an optically excited electron-hole plasma of a disordered semiconductor

1990 ◽  
Vol 81 (2) ◽  
pp. 199-208
Author(s):  
R. C�te ◽  
L. B�nyai ◽  
H. Haug
Keyword(s):  
Excited Electron ◽  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma ◽  
Coulomb Effects

Femtosecond Time Resolved Reflectivity of Optically Excited Silicon

1982 ◽  
Vol 13 ◽  
Author(s):  
R. Yen ◽  
C. V. Shank ◽  
C. Hirlimann
Keyword(s):  
Energy Transfer ◽  
Crystal Lattice ◽  
Optical Pulse ◽  
Excited Electron ◽  
Electron Hole ◽  
Time Resolved ◽  
Hole Plasma ◽  
Electron Hole Plasma

ABSTRACTWe report measurements of the time resolved reflectivity of Silicon following excitation with an intense 90 femtosecond optical pulse. These measurements clearly time resolve the process of energy transfer from the optically excited electron-hole plasma to the crystal lattice and subsequent melting within the first few picoseconds.

High field domain in electron–hole plasma of germanium

1973 ◽  
Vol 15 (2) ◽  
pp. 711-720 ◽  
Author(s):  
V. N. Dobrovolskii ◽  
M. N. Vinoslavskii ◽  
O. S. Zinets
Keyword(s):  
High Field ◽  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma

Instability of the electron-hole plasma in covalent semiconductors

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 1014-1016
Author(s):  
M. Combescot ◽  
J. Bok
Keyword(s):  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma

scholarly journals Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN

1997 ◽  
Vol 2 ◽  
Author(s):  
J.-Chr. Holst ◽  
L. Eckey ◽  
A. Hoffmann ◽  
I. Broser ◽  
H. Amano ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Blue Laser ◽  
Basic Material ◽  
Organic Chemical ◽  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma ◽  
Wide Range ◽  
Gain Spectra ◽  
Excitation Processes

High-excitation processes like biexciton decay and recombination of an electron-hole-plasma are discussed as efficient mechanisms for lasing in blue laser diodes [1]. Therefore, the investigation of these processes is of fundamental importance to the understanding of the properties of GaN as a basic material for optoelectronical applications. We report on comprehensive photoluminescence and gain measurements of highly excited GaN epilayers grown by metal-organic chemical vapor deposition (MOCVD) over a wide range of excitation densities and temperatures. For low temperatures the decay of biexcitons and the electron-hole-plasma dominate the spontaneous-emission and gain spectra. A spectral analysis of the lineshape of these emissions is performed and the properties of the biexciton and the electron-hole-plasma in GaN will be disscused in comparison to other wide-gap materials. At increased temperatures up to 300 K exciton-exciton-scattering and band-to-band recombination are the most efficient processes in the gain spectra beside the electron-hole-plasma.

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