An experimental and theoretical study of surface segregation in a Fe-6at.%Si bicrystal

1997 ◽  
Vol 125 (1-4) ◽  
pp. 287-291
Author(s):  
Thomas Weis ◽  
Markus M. Eisl ◽  
Bernhard M. Reichl ◽  
Kurt W. Brandl ◽  
Herbert St�ri
Keyword(s):  
Surface Segregation ◽  
Theoretical Study

Theoretical study of fluorine-induced surface segregation of Cr in non-passivated Ni-based alloys

2018 ◽  
Vol 124 (13) ◽  
pp. 135302 ◽  
Author(s):  
Ya-Ru Yin ◽  
Cui-Lan Ren ◽  
Han Han ◽  
Kang Pyo So ◽  
Xiang-Xi Ye ◽  
...  
Keyword(s):  
Surface Segregation ◽  
Theoretical Study

scholarly journals Chemical ordering and surface segregation in Ni1-cPtc system: A theoretical study from the alloys to the nanoalloys

2019 ◽  
Vol 14 ◽  
pp. 102493
Author(s):  
Abir Hizi ◽  
Hedi Garbouj ◽  
Christine Mottet ◽  
Moncef Said
Keyword(s):  
Surface Segregation ◽  
Theoretical Study ◽  
Chemical Ordering ◽  
System A

scholarly journals Bidimensional phases in Co–Pt surface alloys: A theoretical study of ordering and surface segregation

2019 ◽  
Vol 679 ◽  
pp. 128-138 ◽  
Author(s):  
Alexis Front ◽  
Bernard Legrand ◽  
Guy Tréglia ◽  
Christine Mottet
Keyword(s):  
Surface Segregation ◽  
Theoretical Study ◽  
Surface Alloys

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

A New Numerical Model for Electron-Probe Analysis at High Depth Resolution

1996 ◽  
Vol 54 ◽  
pp. 490-491
Author(s):  
P.-F. Staub ◽  
C. Bonnelle ◽  
F. Vergand ◽  
P. Jonnard
Keyword(s):  
Electron Probe ◽  
Surface Segregation ◽  
Depth Distribution ◽  
Computing Time ◽  
Depth Resolution ◽  
Physical Parameters ◽  
Electron Probe Analysis ◽  
Interface Phases ◽  
Excitation Conditions ◽  
High Depth

Characterizing dimensionally and chemically nanometric structures such as surface segregation or interface phases can be performed efficiently using electron probe (EP) techniques at very low excitation conditions, i.e. using small incident energies (0.5<E0<5 keV) and low incident overvoltages (1<U0<1.7). In such extreme conditions, classical analytical EP models are generally pushed to their validity limits in terms of accuracy and physical consistency, and Monte-Carlo simulations are not convenient solutions as routine tools, because of their cost in computing time. In this context, we have developed an intermediate procedure, called IntriX, in which the ionization depth distributions Φ(ρz) are numerically reconstructed by integration of basic macroscopic physical parameters describing the electron beam/matter interaction, all of them being available under pre-established analytical forms. IntriX’s procedure consists in dividing the ionization depth distribution into three separate contributions:

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