Primary radical formation in the vapor-phase nitration of alkanes with nitrogen dioxide

Author(s):  
A. V. Topchiev ◽  
N. N. Kaptsov
Nature ◽  
1965 ◽  
Vol 206 (4991) ◽  
pp. 1314-1315 ◽  
Author(s):  
B. B. SINGH ◽  
M. G. ORMEROD

1991 ◽  
Vol 125 (2) ◽  
pp. 119 ◽  
Author(s):  
Eli O. Hole ◽  
Einar Sagstuen ◽  
William H. Nelson ◽  
David M. Close

1970 ◽  
Vol 48 (21) ◽  
pp. 3459-3461
Author(s):  
R. N. Pandey ◽  
Donald Barton

Nitric oxide was found to be an autocatalyst in the reaction of acetic acid and nitrogen dioxide at 470 and 527 °K in the vapor phase. The observed products, in addition to NO, were CO, CO2, and CH3NO2.


1952 ◽  
Vol 17 (7) ◽  
pp. 928-934 ◽  
Author(s):  
G. Bryant Bachman ◽  
H. B. Hass ◽  
J. V. Hewett

Author(s):  
J.C.S. Kim ◽  
M.G. Jourden ◽  
E.S. Carlisle

Chronic exposure to nitrogen dioxide in rodents has shown that injury reaches a maximum after 24 hours, and a reparative adaptive phase follows (1). Damage occurring in the terminal bronchioles and proximal portions of the alveolar ducts in rats has been extensively studied by both light and electron microscopy (1).The present study was undertaken to compare the response of lung tissue to intermittent exposure to 10 ppm of nitrogen dioxide gas for 4 hours per week, while the hamsters were on a vitamin A deficient diet. Ultrastructural observations made from lung tissues obtained from non-gas exposed, hypovitaminosis A animals and gas exposed animals fed a regular commercially prepared diet have been compared to elucidate the specific effect of vitamin A on nitrogen dioxide gas exposure. The interaction occurring between vitamin A and nitrogen dioxide gas has not previously been investigated.


Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.


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