Electrical resistivity and Seebeck coefficient of La1?x M x MnO3 (M = Ca, Sr) single crystals

1988 ◽  
Vol 23 (3) ◽  
pp. 1102-1105 ◽  
Author(s):  
Tomotaka Hashimoto ◽  
Nobuo Ishizawa ◽  
Nobuyasu Mizutani ◽  
Masanori Kato
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Single Crystals

Electron Transport Phenomena in NiS2−xSex Single Crystals

1996 ◽  
Vol 453 ◽  
Author(s):  
X. Yao ◽  
S. Ehrlich ◽  
G. Liedlb ◽  
T. Hogan ◽  
C. Kannewurf ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Single Crystals ◽  
Electron Correlation ◽  
Large Scale ◽  
Structural Changes ◽  
Dominant Role ◽  
Magnetic Ordering ◽  
Structural Studies ◽  
Complex Temperature

AbstractStructural studies, electrical resistivity, and Seebeck coefficient measurements are reported in the range 4.2 − 300 K for single crystals of NiS2−xSex (0 ≤ x ≤ 0.71) grown from a Te melt. Over the entire temperature and composition ranges there are no large scale structural changes concomitant to a variety of magnetic ordering phenomena, and to a changeover from insulating to metallic characteristics as x increases. Thus, the evolution in transport characteristics with x can be studied without interference from the lattice; moreover, the electron count is unaffected by substitution of Se for S. The existence of anomalous peaks in resistivity as a function of temperature is attributed to significant electron correlation phenomena which allow the entropy of charge carrier to play a dominant role. The complex temperature dependence of the Seebeck coefficient is attributed to the participation of both electrons and holes in charge transport.

PHONON-DRAG EFFECT OF ULTRA-THIN FeSi2 AND MnSi1.7/FeSi2 FILMS

2011 ◽  
Vol 25 (22) ◽  
pp. 1829-1838 ◽  
Author(s):  
Q. R. HOU ◽  
B. F. GU ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Single Crystals ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Low Temperatures ◽  
Room Temperature ◽  
Phonon Drag ◽  
Drag Effect ◽  
Thermoelectric Power Factor

Phonon-drag effect usually occurs in single crystals at very low temperatures (10–200 K). Strong phonon-drag effect is observed in ultra-thin β- FeSi 2 films at around room temperature. The Seebeck coefficient of a 23 nm-thick β- FeSi 2 film can reach -1.375 mV/K at 343 K. However, the thermoelectric power factor of the film is still small, only 0.42×10-3 W/m-K2, due to its large electrical resistivity. When a 27 nm-thick MnSi 1.7 film with low electrical resistivity is grown on it, the thermoelectric power factor of the MnSi 1.7 film can reach 1.5×10-3 W/m-K2 at around room temperature. This value is larger than that of bulk MnSi 1.7 material in the same temperature range.

Cerium Doped Bismuth Antimony

2012 ◽  
Vol 1456 ◽  
Author(s):  
Kevin C. Lukas ◽  
Huaizhou Zhao ◽  
Ryan L. Stillwell ◽  
Zhifeng Ren ◽  
Cyril P. Opeil
Keyword(s):  
Magnetic Field ◽  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Single Crystals ◽  
Room Temperature ◽  
Zero Magnetic Field ◽  
Bismuth Antimony ◽  
Impurity Doping ◽  
Antimony Alloys

ABSTRACTBismuth-Antimony alloys have been shown to have high ZT values below room temperature, especially for single crystals. For polycrystalline samples, impurity doping and magnetic field have proven to be powerful tools in the search for understanding and improving thermoelectric performance. Nanopolycrystalline Bi0.88Sb0.12 doped with 0.05, 0.5 and 3 % Ce were prepared by ball milling and dc hot pressing techniques. Electrical resistivity, Seebeck coefficient, thermal conductivity, carrier concentration, mobility, and magnetization are measured in a temperature range of 5-350 K and in magnetic fields up to 9 Tesla. The effects of Ce doping on the thermoelectric properties of Bi0.88Sb0.12 in zero magnetic field are discussed.

Thermoelectric Properties of Semiconducting Intermetallic Compounds: FeGa3and RuGa3

2003 ◽  
Vol 793 ◽  
Author(s):  
Y. Amagai ◽  
A. Yamamoto ◽  
C. H. Lee ◽  
H. Takazawa ◽  
T. Noguchi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
High Seebeck Coefficient

ABSTRACTWe report transport properties of polycrystalline TMGa3(TM = Fe and Ru) compounds in the temperature range 313K<T<973K. These compounds exhibit semiconductorlike behavior with relatively high Seebeck coefficient, electrical resistivity, and Hall carrier concentrations at room temperature in the range of 1017- 1018cm−3. Seebeck coefficient measurements reveal that FeGa3isn-type material, while the Seebeck coefficient of RuGa3changes signs rapidly from large positive values to large negative values around 450K. The thermal conductivity of these compounds is estimated to be 3.5Wm−1K−1at room temperature and decreased to 2.5Wm−1K−1for FeGa3and 2.0Wm−1K−1for RuGa3at high temperature. The resulting thermoelectric figure of merit,ZT, at 945K for RuGa3reaches 0.18.

Cu Doping Effect on Electrical Resistivity and Seebeck Coefficient of Perovskite-Type LaFeO 3 Ceramics

2009 ◽  
Vol 26 (10) ◽  
pp. 107301 ◽  
Author(s):  
Wang Hong-Chao ◽  
Wang Chun-Lei ◽  
Zhang Jia-Liang ◽  
Zhao Ming-Lei ◽  
Liu Jian ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Doping Effect ◽  
Cu Doping ◽  
Perovskite Type

Microstructure and Thermoelectric Properties of Na0.5CoO2

2013 ◽  
Vol 802 ◽  
pp. 218-222 ◽  
Author(s):  
Wanatchaporn Namhongsa ◽  
Tosawat Seetawan ◽  
Pennapa Muthitamongkol ◽  
Chanchana Thanachayanont
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Single Phase ◽  
Solid State Reaction Method ◽  
Powder Size ◽  
Sodium Ions ◽  
Small Particle Size ◽  
Orthorhombic Structure ◽  
Sodium Cobalt Oxide ◽  
Sintering Method

The polycrystalline of sodium cobalt oxide (Na0.5CoO2) was synthesized by solid state reaction method and sintering method. The microstructure was composed of powder size and crystal structure. The Seebeck coefficient and electrical resistivity are measured. We found that the concentration of sodium ions sandwiched between two neighboring CoO2layers played a crucial role in transport properties. The results showed small particle size, single phase and orthorhombic structure. The Seebeck coefficient of Na0.5CoO2increased as the temperature increased. The electrical resistivity was decreased as temperature decreased from the range 300-500 K.

Electrical resistivity of NpAs2 single crystals

Physica B+C ◽  
1985 ◽  
Vol 130 (1-3) ◽  
pp. 102-105 ◽  
Author(s):  
P.G. Thérond ◽  
A. Blaise ◽  
J.M. Fournier ◽  
J. Chiapusio ◽  
J.P. Charvillat ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Single Crystals

The effects of sulfuric acid on the creep, recrystallization, and electrical properties of ice

2003 ◽  
Vol 81 (1-2) ◽  
pp. 395-400 ◽  
Author(s):  
D Iliescu ◽  
I Baker ◽  
X Li
Keyword(s):  
Electrical Resistivity ◽  
Sulfuric Acid ◽  
Single Crystals ◽  
Equal Channel Angular Extrusion ◽  
Boundary Migration ◽  
Constant Load ◽  
Tensile Creep ◽  
Grain Boundary Migration ◽  
Resistivity Measurements ◽  
Lower Resistivity

Both constant load creep and recrystallization are investigated using single crystals of 70–170 ppb sulfuric-acid-doped and -undoped ice. Both sets of crystals exhibited strains in excess of 200% under tensile creep. The undoped specimens reached these strains roughly twice as fast as the doped specimens. After large local strains were imparted to cuboidal single crystals using equal channel angular extrusion at –2°C and subsequent annealing at the same temperature, recrystallization occurred. It was found that a higher concentration of H2SO4 retarded both recrystallization and the subsequent grain-boundary migration. Direct current electrical resistivity measurements performed on polycrystalline, sulfuric-acid-doped (3 ppm) ice at –10°C showed a much lower resistivity in the grain boundaries than in the lattice. PACS No.: 81.90

Out-of-plane electrical resistivity for underdoped Bi2Sr1.6La0.4CuO6+δ single crystals in magnetic field

2000 ◽  
Vol 281-282 ◽  
pp. 926-927 ◽  
Author(s):  
T Akazawa ◽  
H Ikeda ◽  
N Ozawa ◽  
H Kouno ◽  
R Yoshizaki
Keyword(s):  
Magnetic Field ◽  
Electrical Resistivity ◽  
Single Crystals ◽  
Out Of Plane
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