Conductivity of an electrical ceramic during reactor irradiation

�. G. Ashirov; Kim Gen Chan; N. S. Kostyukov; M. I. Muninov; V. N. Sandalov; Yu. S. Skripnikov

doi:10.1007/bf01125362

Conductivity of an electrical ceramic during reactor irradiation

Soviet Atomic Energy ◽

10.1007/bf01125362 ◽

1985 ◽

Vol 58 (3) ◽

pp. 234-237

Author(s):

�. G. Ashirov ◽

Kim Gen Chan ◽

N. S. Kostyukov ◽

M. I. Muninov ◽

V. N. Sandalov ◽

...

Keyword(s):

Reactor Irradiation ◽

Electrical Ceramic

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Neutron-Energy Spectra for Fast Reactor Irradiation Effects

Nuclear Applications and Technology ◽

10.13182/nt70-a28760 ◽

1970 ◽

Vol 9 (4) ◽

pp. 454-507 ◽

Cited By ~ 4

Author(s):

D. Okrent ◽

W. B. Loewenstein ◽

A. D. Rossin ◽

A. B. Smith ◽

B. A. Zolotar ◽

...

Keyword(s):

Neutron Energy ◽

Fast Reactor ◽

Energy Spectra ◽

Reactor Irradiation ◽

Irradiation Effects

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Influence of reactor irradiation on the physico-mechanical properties of electro-ceramics of some commercial grades

Journal of Nuclear Materials ◽

10.1016/s0022-3115(96)00292-9 ◽

1996 ◽

Vol 233-237 ◽

pp. 1253-1256

Author(s):

V.S. Sandakov ◽

Yu.A. Stukert ◽

V.A. Kazakov ◽

V.A. Belyakov ◽

P.A. Fefelov

Keyword(s):

Mechanical Properties ◽

Reactor Irradiation

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Effect of reactor irradiation on the microstructure of pyrocarbon coatings

Soviet Atomic Energy ◽

10.1007/bf01123761 ◽

1984 ◽

Vol 57 (2) ◽

pp. 562-565 ◽

Cited By ~ 1

Author(s):

I. S. Alekseeva ◽

A. A. Babad-Zakhryapin ◽

Yu. G. Degal'tsev ◽

L. A. Elesin ◽

Yu. M. Utkin ◽

...

Keyword(s):

Reactor Irradiation

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Materials and Photosensor Devices with High Radiation Stability

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1117.107 ◽

2015 ◽

Vol 1117 ◽

pp. 107-113 ◽

Cited By ~ 1

Author(s):

Ilariy Rarenko ◽

Dmytro Korbutyak ◽

Volodymyr Koshkin ◽

Boris Danilchenko ◽

Leonid Kosyachenko ◽

...

Keyword(s):

Crystal Structure ◽

Metal Layer ◽

Chemical Properties ◽

Radiation Stability ◽

Reactor Irradiation ◽

High Concentration ◽

High Radiation ◽

Cubic Crystal ◽

Impurity Atoms ◽

Mixed Reactor

Semiconductor Hg3In2Te6 crystals and their analogous are solid solutions of In2Te3 and HgTe. Hg3In2Te6 crystals are congruently melted as chemical compound. Like In2Te3 the Hg3In2Te6 crystal has cubic crystal lattice with stoichiometric vacancies in their crystal structure. The electroconductivity, photoconductivity, mechanical, chemical properties of the crystals do not deteriorate after their irradiation by γ-photons with energies up to 1 MeV and doses up to 1018 cm-2 , by electrons with energies up to 300 MeV and doses up to 1019 cm-2 and by mixed reactor irradiation (filtered slow neutrons) with doses up to 1019 cm-2 [1,2]. This feature is determined by high concentration (~1021 cm-3) of stoihiometric vacancies (Vs) in crystal structure, where every third In-cation node is empty. These Vs are electroneutral, they capture all impurity atoms in these crystals and kept them in electroneutral state too. On the other hand this feature doesn't allow to form direct p-n junctions in these crystals by introducing the impurities. However, we have developed p-n junction analogues in form of Schottki diodes and corresponding photodiodes with semitransparent metal layer on single crystal Hg3In2Te6 substrate that allows irradiation to get into active region preserving this way all the advantages compared to p-n junction.

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