Thermal oxidation characteristics of chemical vapour deposited diamond films

1992 ◽  
Vol 27 (21) ◽  
pp. 5857-5862 ◽  
Author(s):  
Q. Sun ◽  
M. Alam
Keyword(s):  
Thermal Oxidation ◽  
Diamond Films ◽  
Chemical Vapour ◽  
Oxidation Characteristics ◽  
Thermal Oxidation Characteristics

Thermal oxidation characteristics of Fe (CoCrMnNi) medium and high-entropy alloys

2020 ◽  
Vol 120 ◽  
pp. 106757 ◽  
Author(s):  
Maya Putri Agustianingrum ◽  
Fahamsyah Hamdan Latief ◽  
Nokeun Park ◽  
Unhae Lee
Keyword(s):  
Thermal Oxidation ◽  
High Entropy Alloys ◽  
High Entropy ◽  
Oxidation Characteristics ◽  
Thermal Oxidation Characteristics

Diamond/Carbide Nano-Composite Gradient Films: a Route to solve the Adhesion Issues of Diamond Films

2005 ◽  
Vol 890 ◽  
Author(s):  
Thorsten Staedler ◽  
Srikanth Vadali ◽  
Xin Jiang
Keyword(s):  
Diamond Film ◽  
Catalytic Effect ◽  
Soot Formation ◽  
Composite Films ◽  
Diamond Films ◽  
Chemical Vapour ◽  
Compositional Gradient ◽  
Process Step ◽  
Reactive Gases ◽  
Poor Adhesion

ABSTRACTDue to their outstanding mechanical properties diamond films are ideal candidates for many cutting and machining applications. However, industrial applications of these films are limited due to poor adhesion. Two main reasons causing this poor adhesion, which are based on the extrinsic physical and chemical properties of diamond, can be identified: High mechanical stresses induced by a difference of the thermal expansion coefficient between the diamond film and the substrate as well as a catalytic effect in case of metallic substrates containing iron-, cobalt- and nickel that, in combination with a methane atmosphere during deposition, leads to soot formation. One option to overcome these difficulties is to provide an interfacial layer that acts as adhesion layer as well as barrier layer to prevent the catalytic effect of the substrate elements. Even though some successful examples exist, this approach usually requires a time consuming and expensive multi-step process.In this paper, the synthesis of nanocrystalline diamond/carbide composite films with a compositional gradient will be reported. Focusing on the example of diamond/ß-SiC the possibility to create a gradient layer ranging from ß-SiC to diamond in a controlled manner will be shown. The films are prepared by a Microwave Assisted Plasma Chemical Vapour Deposition process (MWCVD) using H2, CH4 and Tetramethylsilane (TMS) as reactive gases. The structure, grain sizes, and volume fractions of the components of these composite films, which consist of a mixture of diamond and carbide phase, can be controlled by adjusting the concentrations of the reactive gases in the gas mixture. This strategy, which handles all depositions in one process step, should allow for an improved diamond film adhesion on tools. The preparation and characterization of the composite films with special emphasize on their mechanical and tribological properties will be discussed and a short outlook on other diamond/carbide systems will be given.

Evaluation of Wear Rate of Nanocrystalline Diamond Films Using Abbott Curve

2017 ◽  
Vol 267 ◽  
pp. 185-189
Author(s):  
Andrei Bogatov ◽  
Vitali Podgursky
Keyword(s):  
Wear Rate ◽  
Cross Sections ◽  
Vapour Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapour ◽  
Nanocrystalline Diamond ◽  
Wear Rates ◽  
Nanocrystalline Diamond Films ◽  
Worn Surface

The nanocrystalline diamond films were deposited by microwave plasma enhanced chemical vapour deposition (PE-CVD) on Si (100) substrate. Reciprocating sliding tests were conducted using Si3N4 balls as a counter body. A method based on the construction of the Abbott curve representing the areas of pristine and worn surface in the wear scars was applied for estimation of the wear rate. The calculated wear rates were compared with the results obtained by profilometric measurements and direct measurement of the wear scars cross sections by scanning electron microscopy (SEM).

Attempts to p-Dope Ultrananocrystalline Diamond Films in a Hot Filament Reactor

2006 ◽  
Vol 956 ◽  
Author(s):  
Paul William May ◽  
Matthew Hannaway
Keyword(s):  
Vapour Deposition ◽  
Film Growth ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapour ◽  
Grain Sizes ◽  
Ultrananocrystalline Diamond ◽  
The Individual ◽  
P Type ◽  
Hot Filament

ABSTRACTUltrananocrystalline diamond (UNCD) films have been deposited using hot filament chemical vapour deposition using Ar/CH4/H2 gas mixtures plus additions of B2H6 in an attempt to make p-type semiconducting films. With increasing additions of B2H6 from 0 to 40,000 ppm with respect to C, the film growth rate was found to decrease substantially, whilst the individual grain sizes increased from nm to μm. With 40,000 ppm of B2H6, crystals of boric oxide were found on the substrate surface, which slowly hydrolysed to boric acid on exposure to air. These results are rationalised using a model for UNCD growth based on competition for surface radical sites between CH3 and C atoms.

Influence of Diamond CVD Growth Conditions and Interlayer Material on Diamond/GaN Interface

2015 ◽  
Vol 821-823 ◽  
pp. 982-985 ◽  
Author(s):  
Tibor Izak ◽  
Oleg Babchenko ◽  
Vít Jirásek ◽  
Gabriel Vanko ◽  
Marián Vojs ◽  
...  
Keyword(s):  
Diamond Film ◽  
Film Formation ◽  
Diamond Films ◽  
Chemical Vapour ◽  
Growth Conditions ◽  
High Ratio ◽  
Cvd Growth ◽  
Chemical Character ◽  
Thin Interlayer

In this study we present the diamond deposition on AlGaN/GaN substrates focusing on the quality of the diamond/GaN interface. The growth of diamond films was performed using microwave chemical vapour deposition system in different gas mixtures: standard CH4/H2(at low and high ratio of CH4to H2) and addition of CO2to CH4/H2gas chemistry. The diamond films were grown directly on GaN films either without or with thin interlayer. As interlayer, 100 nm thick Si3N4was used. Surprisingly, in the case of standard CH4/H2gas mixture, no diamond film was observed on the GaN with SiN interlayer, while adding of CO2resulted in diamond film formation of both samples with and without SiN interlayer. Moreover, adding of CO2led to higher growth rate. The morphology of diamond films and the quality of the diamond/GaN interface was investigated from the cross-section images by scanning electron microscopy and the chemical character (i.e. sp3versus sp2carbon bonds) was measured by Raman spectroscopy.

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