Nuclear-radiation detectors based on high-purity germanium

1973 ◽  
Vol 34 (6) ◽  
pp. 591-593
Author(s):  
V. P. Aver'yanova ◽  
M. I. Ginzburg ◽  
N. B. Strokan ◽  
V. P. Subashieva ◽  
N. I. Tisnek
Keyword(s):  
High Purity ◽  
Radiation Detectors ◽  
Nuclear Radiation ◽  
High Purity Germanium ◽  
Nuclear Radiation Detectors

scholarly journals High-Purity Germanium Crystal Growing

1982 ◽  
Vol 16 ◽  
Author(s):  
W. L. Hansen ◽  
E.E. Haller
Keyword(s):  
High Purity ◽  
Charge Trapping ◽  
Solid Material ◽  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Active Centers ◽  
Defect Complexes ◽  
Regular Production ◽  
And Control ◽  
Nuclear Radiation Detectors

ABSTRACTThe germanium crystals used for the fabrication of nuclear radiation detectors are required to have a purity and crystalline perfection which is unsurpassed by any other solid material. These crystals should not have a net electrically active impurity concentration greater than 10l0 cm−3 and be essentially free of charge trapping defects.Such perfect crystals of germanium can be grown only because of the highly favorable chemical and physical properties of this element. However, ten years of laboratory scale and commercial experience has still not made the production of such crystals routine. The origin and control of many impurities and electrically active defect complexes is now fairly well understood but regular production is often interrupted for long periods due to the difficulty of achieving the required high purity or to charge trapping in detectors made from crystals seemingly grown under the required conditions.The compromises involved in the selection of zone refining and crystal grower parts and ambients is discussed and the difficulty in controlling the purity of key elements in the process is emphasized. The consequences of growing in a hydrogen ambient are discussed in detail and it is shown how complexes of neutral defects produce electrically active centers.

The Characterization of Germanium and Silicon for Nuclear Radiation Detectors.

1982 ◽  
Vol 16 ◽  
Author(s):  
L. S. Darken
Keyword(s):  
High Purity ◽  
Deep Level ◽  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Extended Defects ◽  
Pure Material ◽  
Photothermal Ionization Spectroscopy ◽  
Transient Spectroscopy ◽  
Nuclear Radiation Detectors

ABSTRACTSemiconductor nuclear radiation detectors require deep depletion depths (0.03–3.0 cm) and effective charge collection distances which are several times longer than these depletion depths. These requirements place stringent limitations on the net electrically active impurity concentration, and on the concentration of deep centers which can trap carriers generated by the incident nuclear radiation. This need for extremely pure material distinguishes the interests and efforts of the semiconductor detector community from the rest of the semiconductor community. This paper reviews the characterization of shallow-level, deep-level, neutral, and extended defects in germanium and silicon for nuclear radiation detectors. Photothermal ionization spectroscopy has been used extensively to identify the residual hydrogenic impurities in high-purity (∣NA–ND∣ ≈ 1010–1011 cm−3 ) germanium and silicon. Deep level transient spectroscopy has been effectively used to detect and identify deeper levels in high-purity germanium. Residual neutral defects are not necessarily passive: they may complex to form deep or shallow levels, they may precipitate, or they may act as nucleation sites for precipitation. The properties of extended defects (dislocations, lineage, inclusions, precipitates) and their effects on device performance are fundamentally less well understood, as the origin of the electrical activity of these defects is uncertain. It has been found in numerous instances that chemical interactions among defects are important even in these high-purity semiconductors.

Features of characteristics and stability of CdTe nuclear radiation detectors fabricated by laser doping technique

2008 ◽  
Author(s):  
Volodymyr A. Gnatyuk ◽  
Toru Aoki ◽  
Oleksandr I. Vlasenko ◽  
Sergiy N. Levytskyi ◽  
Yoshinori Hatanaka ◽  
...  
Keyword(s):  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Laser Doping ◽  
Doping Technique ◽  
Nuclear Radiation Detectors

Surface processing of CdTe crystals by an excimer laser and its application in fabricating nuclear radiation detectors

2004 ◽  
Vol 1 (4) ◽  
pp. 1071-1074 ◽  
Author(s):  
M. Niraula ◽  
Y. Agata ◽  
K. Yasuda ◽  
A. Nakamura ◽  
T. Aoki ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Surface Processing ◽  
Nuclear Radiation Detectors
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