Quenching of solid samples for high temperature equilibrium measurement

1985 ◽  
Vol 20 (6) ◽  
pp. 2193-2198 ◽  
Author(s):  
D. P. Birnie ◽  
W. D. Kingery
Keyword(s):  
High Temperature ◽  
Solid Samples ◽  
Temperature Equilibrium

High-Temperature Equilibrium between High-Tc Oxide and Gas Phase

1991 ◽  
Vol 163 (1) ◽  
pp. 231-240 ◽  
Author(s):  
V. I. Tsidilkovskii ◽  
I. A. Leonidov ◽  
A. A. Lakhtin ◽  
V. A. Mezrin
Keyword(s):  
High Temperature ◽  
Gas Phase ◽  
High Tc ◽  
Temperature Equilibrium

Misbehavior in High Temperature Equilibrium of Water-Gas Reaction

2012 ◽  
Vol 245 ◽  
pp. 346-351
Author(s):  
Radu Dan Rugescu ◽  
Florin Radu Bacaran
Keyword(s):  
Numerical Simulation ◽  
High Temperature ◽  
Chemical Equilibrium ◽  
Solid Propellant ◽  
Combustion Products ◽  
Linearization Method ◽  
Gaseous Products ◽  
Direct Linearization ◽  
Temperature Equilibrium ◽  
Water Gas

The observation that the chemical equilibrium between the combustion products of solid propellant samples within static calorimeters is unexpectedly freezing at high temperatures is proved through a general numerical simulation of the isochoric cooling with chemical reactions between the gaseous products. A proprietary, direct linearization method of thermochemical computation is used that enables following any chemical reaction in equilibrium with high convergence. The observed chemical freezing within calorimeters is proved.

From the Mystery to the Understanding of the Self-Interstitials in Silicon

1980 ◽  
Vol 2 ◽  
Author(s):  
W. Frank ◽  
A. Seeger ◽  
U. Gösele
Keyword(s):  
High Temperature ◽  
The Self ◽  
Experimental Conditions ◽  
Group V ◽  
Group Iii ◽  
Enhanced Diffusion ◽  
Self Diffusion ◽  
Thermally Activated ◽  
Temperature Equilibrium ◽  
K Concentration

ABSTRACTOur present knowledge on self-interstitials in silicon and the rôle these defects play under widely different experimental conditions are surveyed. In particular, the following phenomena involving self-interstitials either in supersaturations or under high-temperature thermal-equilibrium conditions are considered: mobility-enhanced diffusion of self-interstitials below liquid-helium temperature, thermally activated diffusion of self-interstitials at inter-mediate temperatures (14O K to 600 K), concentration-enhanced diffusion of Group-III or Group-V elements in silicon at higher temperatures, and— as examples for high-temperature equilibrium phenomena — self-diffusion and diffusion of gold in silicon. This leads to the picture that the self-interstitials in silicon may occur in different electrical charge states and possess dumbbell configurations or are extended over several atomic volumes at intermediate or high temperatures, respectively.

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