Reactivity and molecular structure of silicon carbide fibres derived from polycarbosilanes

1992 ◽  
Vol 27 (15) ◽  
pp. 4243-4246 ◽  
Author(s):  
Ph. Schreck ◽  
C. Vix-Guterl ◽  
P. Ehrburger ◽  
J. Lahaye
Keyword(s):  
Molecular Structure ◽  
Silicon Carbide

scholarly journals Influence of Molecular Structure of Anionic Polymer Dispersants on Dense Silicon Carbide Suspension Behavior and Microstructures of Green Bodies Prepared by Slip Casting

2003 ◽  
Vol 111 (1293) ◽  
pp. 327-332 ◽  
Author(s):  
Masahiro NOJIRI ◽  
Hajime HASEGAWA ◽  
Takuro ONO ◽  
Toshio KAKUI ◽  
Mayumi TSUKADA ◽  
...  
Keyword(s):  
Molecular Structure ◽  
Silicon Carbide ◽  
Slip Casting ◽  
Anionic Polymer

Reactivity and molecular structure of silicon carbide fibres derived from polycarbosilanes

1992 ◽  
Vol 27 (15) ◽  
pp. 4237-4242 ◽  
Author(s):  
Ph. Schreck ◽  
C. Vix-Guterl ◽  
P. Ehrburger ◽  
J. Lahaye
Keyword(s):  
Molecular Structure ◽  
Silicon Carbide

Covalently Attached Organic Monolayers onto Silicon Carbide from 1-Alkynes: Molecular Structure and Tribological Properties

Langmuir ◽  
2013 ◽  
Vol 29 (12) ◽  
pp. 4019-4031 ◽  
Author(s):  
Sidharam P. Pujari ◽  
Luc Scheres ◽  
Tobias Weidner ◽  
Joe E. Baio ◽  
Martien A. Cohen Stuart ◽  
...  
Keyword(s):  
Molecular Structure ◽  
Silicon Carbide ◽  
Tribological Properties ◽  
Organic Monolayers

Irradiation behavior of pyrolytic silicon carbide

1983 ◽  
Vol 41 ◽  
pp. 72-73
Author(s):  
R. J. Lauf
Keyword(s):  
Silicon Carbide ◽  
Fission Products ◽  
Thermodynamics And Kinetics ◽  
Neutron Fluences ◽  
Fuel Particles ◽  
Sic Coatings ◽  
Irradiation Behavior ◽  
Kinetics Of ◽  
Htgr Fuel

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.

Molecular Structure of the Outermost Cell Wall Component of Spirillum Serpens

1977 ◽  
Vol 35 ◽  
pp. 342-343
Author(s):  
Wah Chiu ◽  
David Grano
Keyword(s):  
Molecular Structure ◽  
Cell Wall ◽  
Outer Membrane ◽  
Gel Electrophoresis ◽  
Electron Microscopic Examination ◽  
Electron Microscopic ◽  
Cell Wall Component ◽  
Protein Components ◽  
Exposure Technique ◽  
Structural Aspects

The periodic structure external to the outer membrane of Spirillum serpens VHA has been isolated by similar procedures to those used by Buckmire and Murray (1). From SDS gel electrophoresis, we have found that the isolated fragments contain several protein components, and that the crystalline structure is composed of a glycoprotein component with a molecular weight of ∽ 140,000 daltons (2). Under an electron microscopic examination, we have visualized the hexagonally-packed glycoprotein subunits, as well as the bilayer profile of the outer membrane. In this paper, we will discuss some structural aspects of the crystalline glycoproteins, based on computer-reconstructed images of the external cell wall fragments.The specimens were prepared for electron microscopy in two ways: negatively stained with 1% PTA, and maintained in a frozen-hydrated state (3). The micrographs were taken with a JEM-100B electron microscope with a field emission gun. The minimum exposure technique was essential for imaging the frozen- hydrated specimens.

Microstructural Evaluation of Silicon Carbide Whisker Reinforced Alumina Fabricated with Carbon-Coated Whiskers

1991 ◽  
Vol 49 ◽  
pp. 920-921
Author(s):  
K. B. Alexander ◽  
P. F. Becher
Keyword(s):  
Silicon Carbide ◽  
High Resolution Electron Microscopy ◽  
Ceramic Composites ◽  
Interface Debonding ◽  
Resolution Electron ◽  
Microstructural Evaluation ◽  
Carbon Coated ◽  
Electron Energy Loss ◽  
Interfacial Films ◽  
Debonding Process

The presence of interfacial films at the whisker-matrix interface can significantly influence the fracture toughness of ceramic composites. The film may alter the interface debonding process though changes in either the interfacial fracture energy or the residual stress at the interface. In addition, the films may affect the whisker pullout process through the frictional sliding coefficients or the extent of mechanical interlocking of the interface due to the whisker surface topography.Composites containing ACMC silicon carbide whiskers (SiCw) which had been coated with 5-10 nm of carbon and Tokai whiskers coated with 2 nm of carbon have been examined. High resolution electron microscopy (HREM) images of the interface were obtained with a JEOL 4000EX electron microscope. The whisker geometry used for HREM imaging is described in Reference 2. High spatial resolution (< 2-nm-diameter probe) parallel-collection electron energy loss spectroscopy (PEELS) measurements were obtained with a Philips EM400T/FEG microscope equipped with a Gatan Model 666 spectrometer.

TEM of grain growth and phase transformations during creep of SCS-6 silicon carbide fibers

1995 ◽  
Vol 53 ◽  
pp. 350-351
Author(s):  
L. A. Giannuzzi ◽  
C. A. Lewinsohn ◽  
C. E. Bakis ◽  
R. E. Tressler
Keyword(s):  
Silicon Carbide ◽  
Creep Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Primary Creep ◽  
Excess Carbon ◽  
Silicon Carbide Fibers ◽  
Sic Fiber ◽  
Carbon Core ◽  
Grain Width

The SCS-6 SiC fiber is a 142 μm diameter fiber consisting of four distinct regions of βSiC. These SiC regions vary in excess carbon content ranging from 10 a/o down to 5 a/o in the SiC1 through SiC3 region. The SiC4 region is stoichiometric. The SiC sub-grains in all regions grow radially outward from the carbon core of the fiber during the chemical vapor deposition processing of these fibers. In general, the sub-grain width changes from 50nm to 250nm while maintaining an aspect ratio of ~10:1 from the SiC1 through the SiC4 regions. In addition, the SiC shows a <110> texture, i.e., the {111} planes lie ±15° along the fiber axes. Previous has shown that the SCS-6 fiber (as well as the SCS-9 and the developmental SCS-50 μm fiber) undergoes primary creep (i.e., the creep rate constantly decreases as a function of time) throughout the lifetime of the creep test.

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