Intrinsic noise of a distributed third harmonic generator based on a semiconductor with negative differential conductivity

1986 ◽  
Vol 29 (12) ◽  
pp. 1104-1107
Author(s):  
V. V. Zaitsev ◽  
P. V. Tyapukhin
2014 ◽  
Vol 56 (3) ◽  
pp. 568-570 ◽  
Author(s):  
In Bok Kim ◽  
Kang Wook Kim ◽  
Hyoungsuk Yoo ◽  
Jonghoo Park ◽  
Hongjoon Kim

2007 ◽  
Vol 17 (01) ◽  
pp. 173-176 ◽  
Author(s):  
BARBAROS ASLAN ◽  
LESTER F. EASTMAN ◽  
WILLIAM J. SCHAFF ◽  
XIAODONG CHEN ◽  
MICHAEL G. SPENCER ◽  
...  

We present the experimental development and characterization of GaN ballistic diodes for THz operation. Fabricated devices have been described and gathered experimental data is discussed. The major problem addressed is the domination of the parasitic resistances which significantly reduce the accelerating electric field across the ballistic region (intrinsic layer).


Sign in / Sign up

Export Citation Format

Share Document