Indirect measurement of light beam energy

1978 ◽  
Vol 21 (5) ◽  
pp. 487-492
Author(s):  
A. S. Krest'yaninov ◽  
V. V. Mityugov
Keyword(s):  
Light Beam ◽  
Beam Energy ◽  
Indirect Measurement

Enhancement of diffraction efficiency for optical gratings

2000 ◽  
Vol 78 (5-6) ◽  
pp. 537-542
Author(s):  
G Z Zhang
Keyword(s):  
Light Beam ◽  
Diffraction Efficiency ◽  
Beam Energy ◽  
Incident Light ◽  
Glass Plate ◽  
Air Gap ◽  
Multiple Reflection ◽  
Input Beam ◽  
Incident Light Beam ◽  
Optical Gratings

A method to increase the diffraction efficiency for optical gratings is proposed. Using a simple glass plate sitting parallel to the top of a grating surface, one can form an air gap between the surfaces of the grating and the glass plate to reflect a grazing-incident light beam and make diffraction through multiple reflection of the beam between the grating and glass plate surfaces. As a result, this device can efficiently enhance the grating efficiency by diffracting the input beam energy into various diffraction orders. PACS Nos.: 07.60-j, 42.25Fx, 42.40Lx, 42.79Dj, 42.40Fg

Edge Penetration Effects in the Low-Loss Electron Image in the SEM

1988 ◽  
Vol 46 ◽  
pp. 202-203
Author(s):  
Oliver C. Wells
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Beam Energy ◽  
Secondary Electron ◽  
Sharp Edge ◽  
Beam Diameter ◽  
Low Loss ◽  
Additional Information ◽  
Electron Image ◽  
Scanning Electron

The low-loss electron (LLE) image in the scanning electron microscope (SEM) is useful for the study of uncoated photoresist and some other poorly conducting specimens because it is less sensitive to specimen charging than is the secondary electron (SE) image. A second advantage can arise from a significant reduction in the width of the “penetration fringe” close to a sharp edge. Although both of these problems can also be solved by operating with a beam energy of about 1 keV, the LLE image has the advantage that it permits the use of a higher beam energy and therefore (for a given SEM) a smaller beam diameter. It is an additional attraction of the LLE image that it can be obtained simultaneously with the SE image, and this gives additional information in many cases. This paper shows the reduction in penetration effects given by the use of the LLE image.

Electron beam induced current study of thin silicon layers on insulator substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 618-619
Author(s):  
A. Buczkowski ◽  
Z. J. Radzimski ◽  
J. C. Russ ◽  
G. A. Rozgonyi
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Beam Energy ◽  
Collection Efficiency ◽  
Silicon Layer ◽  
Depletion Layer ◽  
Incident Electron Energy ◽  
Induced Current ◽  
Electron Hole ◽  
Electron Beam Induced Current

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.

Surface recombination effects on minority carrier diffusion length measurements using electron beam-induced current

1990 ◽  
Vol 48 (4) ◽  
pp. 744-745
Author(s):  
D.P. Malta ◽  
M.L. Timmons
Keyword(s):  
Electron Beam ◽  
Beam Energy ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Effective Diffusion ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Logarithmic Scale ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion

Measurement of the minority carrier diffusion length (L) can be performed by measurement of the rate of decay of excess minority carriers with the distance (x) of an electron beam excitation source from a p-n junction or Schottky barrier junction perpendicular to the surface in an SEM. In an ideal case, the decay is exponential according to the equation, I = Ioexp(−x/L), where I is the current measured at x and Io is the maximum current measured at x=0. L can be obtained from the slope of the straight line when plotted on a semi-logarithmic scale. In reality, carriers recombine not only in the bulk but at the surface as well. The result is a non-exponential decay or a sublinear semi-logarithmic plot. The effective diffusion length (Leff) measured is shorter than the actual value. Some improvement in accuracy can be obtained by increasing the beam-energy, thereby increasing the penetration depth and reducing the percentage of carriers reaching the surface. For materials known to have a high surface recombination velocity s (cm/sec) such as GaAs and its alloys, increasing the beam energy is insufficient. Furthermore, one may find an upper limit on beam energy as the diameter of the signal generation volume approaches the device dimensions.

DUAL LIGHT BEAM MODULATION OF PHOTOCARRIER LIFETIME IN INTRINSIC a-Si:H

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-597-C4-600 ◽  
Author(s):  
P. D. Persans ◽  
H. Fritzsche
Keyword(s):  
Light Beam ◽  
Beam Modulation

ELECTRON BEAM ENERGY BRANCHING IN OXYGEN

1979 ◽  
Vol 40 (C7) ◽  
pp. C7-777-C7-778
Author(s):  
G. Fournier ◽  
J. Bonnet ◽  
J. Bridet ◽  
J. Fort ◽  
D. Pigache
Keyword(s):  
Electron Beam ◽  
Beam Energy ◽  
Electron Beam Energy

Use of vent stack temperature as a feedforward variable for dissolver total titratable alkali (TTA) control

TAPPI Journal ◽  
2018 ◽  
Vol 17 (05) ◽  
pp. 261-269
Author(s):  
Wei Ren ◽  
Brennan Dubord ◽  
Jason Johnson ◽  
Bruce Allison
Keyword(s):  
Feedback Control ◽  
Current Practice ◽  
Feedforward Control ◽  
Control Variable ◽  
Indirect Measurement ◽  
Tight Control ◽  
Transfer Lines ◽  
Green Liquor ◽  
Process Dynamics ◽  
Downstream Processes

Tight control of raw green liquor total titratable alkali (TTA) may be considered an important first step towards improving the overall economic performance of the causticizing process. Dissolving tank control is made difficult by the fact that the unknown smelt flow is highly variable and subject to runoff. High TTA variability negatively impacts operational costs through increased scaling in the dissolver and transfer lines, increased deadload in the liquor cycle, under- and over-liming, increased energy consumption, and increased maintenance. Current practice is to use feedback control to regulate the TTA to a target value through manipulation of weak wash flow while simultaneously keeping dissolver density within acceptable limits. Unfortunately, the amount of variability reduction that can be achieved by feedback control alone is fundamentally limited by the process dynamics. One way to improve upon the situation would be to measure the smelt flow and use it as a feedforward control variable. Direct measurement of smelt flow is not yet possible. The use of an indirect measurement, the dissolver vent stack temperature, is investigated in this paper as a surrogate feedforward variable for dissolving tank TTA control. Mill trials indicate that significant variability reduction in the raw green liquor TTA is possible and that the control improvements carry through to the downstream processes.

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