Calculation of the current density distribution in an amalgam electrolyser by the finite element method

1988 ◽  
Vol 18 (1) ◽  
pp. 96-103 ◽  
Author(s):  
Michal Šimek ◽  
Ivo Roušar
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Density Distribution ◽  
Current Density ◽  
Current Density Distribution ◽  
The Finite Element Method ◽  
Element Method

Bonding, Splitting and Thinning by Porous Si in ELTRAN®; SOI-Epi Wafer™

2001 ◽  
Vol 681 ◽  
Author(s):  
Kenji Yamagata ◽  
Takao Yonehara
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Film Thickness ◽  
Density Distribution ◽  
Layer Thickness ◽  
Porous Layer ◽  
Current Density ◽  
Current Density Distribution ◽  
Wafer Surface ◽  
Porous Si

ABSTRACTELTRAN is a unique technique to produce the SOI wafers using a porous Si material in semiconductor process. In ELTRAN process, it is required to form the porous Si layer on entire wafer surface uniformly, stably and mass productively without contaminations. In this investigation, we have carried out the simulation of current density distribution to unify the porous layer thickness by finite element method. Canon designed and completed an automatic anodization apparatus. As a result, we could produce the 8 and 6 inches porous Si wafers and ELTRAN SOI wafers stably. And we also developed successfully 300mm ELTRAN SOI wafers with excellent SOI film thickness uniformity.

Simulation of tuning graphene plasmonic behaviors by ferroelectric domains for self-driven infrared photodetector applications

Nanoscale ◽  
2019 ◽  
Vol 11 (43) ◽  
pp. 20868-20875 ◽  
Author(s):  
Junxiong Guo ◽  
Yu Liu ◽  
Yuan Lin ◽  
Yu Tian ◽  
Jinxing Zhang ◽  
...  
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Interfacial Effect ◽  
Infrared Photodetector ◽  
The Finite Element Method ◽  
Ferroelectric Domains ◽  
Element Method

We propose a graphene plasmonic infrared photodetector tuned by ferroelectric domains and investigate the interfacial effect using the finite element method.

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