A low noise SIS receiver covering the frequency range 215?250 GHz

1988 ◽  
Vol 9 (4) ◽  
pp. 361-370 ◽  
Author(s):  
R. Blundell ◽  
M. Carter ◽  
K. H. Gundlach
Keyword(s):  
Low Noise ◽  
Frequency Range ◽  
Sis Receiver

scholarly journals Wide-Band Tunerless Mixer Mounts for 100 GHz and 150 GHz SIS receivers

1994 ◽  
Vol 140 ◽  
pp. 78-81
Author(s):  
K. Sunada ◽  
R. Kawabe ◽  
J. Inatani
Keyword(s):  
Noise Temperature ◽  
Wide Band ◽  
Wide Frequency Range ◽  
Low Noise ◽  
Frequency Range ◽  
Sis Receiver ◽  
Embedding Impedance

AbstractThe performance of the new SIS receiver systems at the Nobeyama Millimeter Array are described. These receivers operate at 100 GHz and 150 GHz bands and tunerless mixer mounts have been adopted. These receivers show very low noise temperature (< 50 K) over a very wide frequency range because of the large embedding impedance range.

60 GHz-Band Low-Noise Amplifier

2017 ◽  
Vol 26 (05) ◽  
pp. 1750075 ◽  
Author(s):  
Najam Muhammad Amin ◽  
Lianfeng Shen ◽  
Zhi-Gong Wang ◽  
Muhammad Ovais Akhter ◽  
Muhammad Tariq Afridi
Keyword(s):  
Transmission Line ◽  
Quality Factor ◽  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Constant Current ◽  
60 Ghz ◽  
Frequency Range ◽  
Constant Current Density ◽  
Chip Area

This paper presents the design of a 60[Formula: see text]GHz-band LNA intended for the 63.72–65.88[Formula: see text]GHz frequency range (channel-4 of the 60[Formula: see text]GHz band). The LNA is designed in a 65-nm CMOS technology and the design methodology is based on a constant-current-density biasing scheme. Prior to designing the LNA, a detailed investigation into the transistor and passives performances at millimeter-wave (MMW) frequencies is carried out. It is shown that biasing the transistors for an optimum noise figure performance does not degrade their power gain significantly. Furthermore, three potential inductive transmission line candidates, based on coplanar waveguide (CPW) and microstrip line (MSL) structures, have been considered to realize the MMW interconnects. Electromagnetic (EM) simulations have been performed to design and compare the performances of these inductive lines. It is shown that the inductive quality factor of a CPW-based inductive transmission line ([Formula: see text] is more than 3.4 times higher than its MSL counterpart @ 65[Formula: see text]GHz. A CPW structure, with an optimized ground-equalizing metal strip density to achieve the highest inductive quality factor, is therefore a preferred choice for the design of MMW interconnects, compared to an MSL. The LNA achieves a measured forward gain of [Formula: see text][Formula: see text]dB with good input and output impedance matching of better than [Formula: see text][Formula: see text]dB in the desired frequency range. Covering a chip area of 1256[Formula: see text][Formula: see text]m[Formula: see text]m including the pads, the LNA dissipates a power of only 16.2[Formula: see text]mW.

HIGH-PERFORMANCE SURFACE TRANSVERSE WAVE RESONATORS IN THE LOWER GHz FREQUENCY RANGE

2000 ◽  
Vol 10 (03) ◽  
pp. 735-792 ◽  
Author(s):  
IVAN D. AVRAMOV
Keyword(s):  
Phase Noise ◽  
Transverse Wave ◽  
High Power ◽  
Acoustic Waves ◽  
Power Efficiency ◽  
Surface Acoustic Waves ◽  
Low Noise ◽  
Propagation Loss ◽  
Range Data ◽  
Frequency Range

Since the first successful surface transverse wave (STW) resonator was demonstrated by Bagwell and Bray in 1987, STW resonant devices on temperature stable cut orientations of piezoelectric quartz have enjoyed a spectacular development. The tremendous interest in these devices is based on the fact that, compared to the widely used surface acoustic waves (SAW), the STW acoustic mode features some unique properties which makes it very attractive for low-noise microwave oscillator applications in the 1.0 to 3.0 GHz frequency range in which SAW based or dielectric resonator oscillators (DRO) fail to provide satisfactory performance. These STW properties include: high propagation velocity, material Q-values exceeding three times those of SAW and bulk acoustic waves (BAW) on quartz, low propagation loss, unprecedented 1/f device phase noise, extremely high power handling ability, as well as low aging and low vibration sensitivity. This paper reviews the fundamentals of STW propagation in resonant geometries on rotated Y-cuts of quartz and highlights important design aspects necessary for achieving desired STW resonator performance. Different designs of high- and low-Q, low-loss resonant devices and coupled resonator filters (CRF) in the 1.0 to 2.5 GHz range are characterized and discussed. Design details and data on state-of-the-art STW based fixed frequency and voltage controlled oscillators (VCO) with low phase noise and high power efficiency are presented. Finally, several applications of STW devices in GHz range data transmitters, receivers and sensors are described and discussed.

Design and modeling of an ultra-wideband low-noise distributed amplifier in InP DHBT technology

2019 ◽  
Vol 11 (7) ◽  
pp. 635-644 ◽  
Author(s):  
T. Shivan ◽  
E. Kaule ◽  
M. Hossain ◽  
R. Doerner ◽  
T. Johansen ◽  
...  
Keyword(s):  
Noise Figure ◽  
Impedance Matching ◽  
Low Noise ◽  
Ultra Wideband ◽  
Frequency Range ◽  
Collector Current ◽  
Noise Sources ◽  
Distributed Amplifier ◽  
Double Heterojunction ◽  
High Bandwidth

AbstractThis paper reports on an ultra-wideband low-noise distributed amplifier (LNDA) in a transferred-substrate InP double heterojunction bipolar transistor (DHBT) technology which exhibits a uniform low-noise characteristic over a large frequency range. To obtain very high bandwidth, a distributed architecture has been chosen with cascode unit gain cells. Each unit cell consists of two cascode-connected transistors with 500 nm emitter length and ft/fmax of ~360/492 GHz, respectively. Due to optimum line-impedance matching, low common-base transistor capacitance, and low collector-current operation, the circuit exhibits a low-noise figure (NF) over a broad frequency range. A 3-dB bandwidth from 40 to 185 GHz is measured, with an NF of 8 dB within the frequency range between 75 and 105 GHz. Moreover, this circuit demonstrates the widest 3-dB bandwidth operation among all reported single-stage amplifiers with a cascode configuration. Additionally, this work has proposed that the noise sources of the InP DHBTs are largely uncorrelated. As a result, a reliable prediction can be done for the NF of ultra-wideband circuits beyond the frequency range of the measurement equipment.

scholarly journals A wideband cryogenic microwave low-noise amplifier

2020 ◽  
Vol 11 ◽  
pp. 1484-1491
Author(s):  
Boris I Ivanov ◽  
Dmitri I Volkhin ◽  
Ilya L Novikov ◽  
Dmitri K Pitsun ◽  
Dmitri O Moskalev ◽  
...  
Keyword(s):  
Power Dissipation ◽  
Coplanar Waveguide ◽  
Noise Temperature ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
Frequency Range ◽  
Noise Amplifier ◽  
On Chip

A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.

A broadband low noise SIS receiver for submillimeter astronomy

2003 ◽  
Author(s):  
T.H. Buttgenbach ◽  
R.E. Miller ◽  
M.J. Wengler ◽  
D.M. Watson ◽  
T.G. Phillips
Keyword(s):  
Low Noise ◽  
Sis Receiver ◽  
Submillimeter Astronomy

scholarly journals GaN-based single-chip frontend for next-generation X-band AESA systems

2018 ◽  
Vol 10 (5-6) ◽  
pp. 660-665 ◽  
Author(s):  
Patrick Schuh ◽  
Hardy Sledzik ◽  
Rolf Reber
Keyword(s):  
Generation X ◽  
Noise Figure ◽  
Power Level ◽  
Input Power ◽  
Low Noise ◽  
Next Generation ◽  
Frequency Range ◽  
Single Chip ◽  
Large Signal ◽  
Integration Density

AbstractA next generation of active electronically scanned array (AESA) antennas will be challenged with the need for lower size, weight, power, and cost. This leads to enhanced demands especially with regard to the integration density of the radio frequency-part inside aT/Rmodule. The semiconductor material GaN has proven its capacity for high-power amplifiers (HPA), robust receive components as well as switch components for separation of transmit and receive mode. This paper will describe the design and measurement results of a GaN-based single-chipT/Rmodule frontend (HPA, low noise anplifier, and single-pole double-throw (SPDT)) using UMS GH25 technology and covering the frequency range from 8 GHz to 12 GHz. The key performance parameters of the frontend are 13 W minimum transmit (TX) output power over the whole frequency range with peak power up to 17 W. The frontend in receive (RX) mode has a noise figure below 3.2 dB over the whole frequency range, and can survive more than 5 W input power. The large signal insertion loss of the used SPDT is below 0.9 dB at 43 dBm input power level.

scholarly journals Atmospheric Propagation Of SubTHz Waves And Space, 6G & 7G Communications

2021 ◽  
Vol 2015 (1) ◽  
pp. 012084
Author(s):  
Lesnov Ilya ◽  
Vdovin Vyacheslav
Keyword(s):  
High Capacity ◽  
Signal Propagation ◽  
Low Noise ◽  
High Signal ◽  
Atmospheric Conditions ◽  
Frequency Range ◽  
Actual Problem ◽  
Atmospheric Propagation ◽  
Data Rates ◽  
Wireless Telecommunication

Abstract The work is devoted to the actual problem of data rate of wireless telecommunication channels. Presented analysis of the telecommunication channel subterahertz (subTHz) frequency range - as the most promising band for the implementation of wireless telecommunications for space links and terrestrial cellular communications of high capacity. A channel considered as a combination of high effective transponder / transmitter duplex together with an open high dissipative atmospheric line. The means to achieve a high signal / noise ratio is usage of low-noise cryogenic receivers. The theoretical analysis of data rates for various atmospheric conditions and technical implementations of communication channels demonstrated reasonable limits of cooling of receivers, providing a weighty increase channel capacity, while deeper cooling is impractical due to weather restrictions in certain ranges and conditions of signal propagation, including altitude and seasonal features.

scholarly journals CMOS Front-End of LNA for GPS and GSM wireless applications

2017 ◽  
Vol 7 (1.5) ◽  
pp. 1
Author(s):  
Mahesh Mudavath ◽  
K. Hari Kishore
Keyword(s):  
Power Dissipation ◽  
Simulation Analysis ◽  
Noise Figure ◽  
Low Cost ◽  
High Sensitivity ◽  
Low Noise ◽  
Frequency Range ◽  
Wireless Applications ◽  
Noise Amplifier ◽  
Intercept Point

This paper describes a layout of a CMOS Low Noise Amplifier for reconfigurable packages which include GPS, GSM Wi-Fi applications. The improvement of a notably linear Radio front-stop, able to function with Galileo and GPS satellite signals suitable for coexisting in a mobile opposed environment for area based offerings, pleasing the fundamental necessities for a mass market product which includes low cost, low footprint, good accuracy, low strength intake and high sensitivity. primarily based on a wideband enter matching, the LNA stages cowl all band of hobby even as reaching a great change-off between excessive gain, low noise parent and coffee electricity intake. The complete simulation analysis of the circuit results in the frequency range of 1.4 GHz to 2 GHz. The noise figure is 1.8 dB at 1.4GHz and rises to 3.4 dB at 2 GHz. The input return and output return losses (S11, S22) of the LNA at a frequency range between 1.4 GHz and 2 GHz are S11= -12 dB, S22 =-44.73 dB at 1.77 GHz and S22 =-26.47 dB at 2 GHz. The overall gain of the LNA (S21) is 13 dB at 1.4025 GHz, 3rd order input intercept point (IIP3) = -3.16 dBm and -1dB compression point is -12.56 dBm. Input Impedance of 50Ω, 3dB Power Bandwidth of 450MHz, and Power Dissipation of 2.7mW at 1.2V power supply.

Computational Model to Investigate the Sound Radiation from Rolling Tires5

2007 ◽  
Vol 35 (3) ◽  
pp. 209-225 ◽  
Author(s):  
Jan Biermann ◽  
Otto von Estorff ◽  
Steffen Petersen ◽  
Holger Schmidt
Keyword(s):  
Computational Model ◽  
Process Analysis ◽  
Traffic Noise ◽  
Measurement Data ◽  
Sound Radiation ◽  
Low Noise ◽  
Frequency Range ◽  
The Road ◽  
Simulation Process ◽  
Road Systems

Abstract Tire/road noise is one of the most urgent problems in traffic noise abatement. Therefore, to facilitate the design process of low noise tire/road systems, the development of appropriate computational tools, accounting for the most relevant effects of the noise generation and radiation, seems essential. However, until now no physically based and validated models exist that can be used to determine the sound radiation of rolling vehicle tires within the relevant frequency range and with reasonable accuracy. The numerical model presented here is based on a simulation process that may be split into several analysis steps: computation of the nonlinear stationary rolling process, analysis of the tire dynamics caused by the road roughness, and computation of the sound radiation. This contribution is concerned with the latter part of the analysis procedure. For the sound radiation analysis, the vibrations on the tire surface are extracted from a preceding structural analysis and used as boundary conditions in the acoustic model. The acoustic simulation process is based on the finite/infinite element approach, where an improved variant of the so-called Astley-Leis elements is used to model the sound radiation. The efficiency of the employed numerical methods is somewhat essential, because computational costs generally restrict the frequency range which can be simulated. By evaluating the sound pressure field, it is possible to compare the acoustic performance of specific tire/road systems, and the influence of certain parameters, such as the road texture or the impedance, on the noise radiation can be studied. The current work focuses on the validation of the computational model. Hence, characteristic results from the numerical simulations are compared with corresponding measurement data obtained from different test setups, including standing as well as rolling tires. This paper is dedicated to Em. O. Univ. Professor Dipl.-Ing. Dr. Techn. Dr. H. C. Franz Ziegler on the occasion of his 70th birthday.

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