Design of multifunctional transducers of charged-particle beam parameters based on electron-beam diagnostic methods

1991 ◽  
Vol 34 (6) ◽  
pp. 621-626
Author(s):  
V. N. Azarov
2007 ◽  
Vol 73 (5) ◽  
pp. 627-634 ◽  
Author(s):  
J. T. MENDONÇA ◽  
L. O. SILVA ◽  
R. BINGHAM

AbstractA new configuration for the laser accelerator is proposed, which is inspired by the relativistic photon mirror effect. The material mirror is replaced here by an intense laser pulse, acting as a photon mirror for the incoming charged particles. A sufficient condition for particle reflection at such a photon mirror is established and three types of particle trajectories are described. A snow-plow acceleration regime is identified and quantitatively defined. Production of intense radiation bursts by the charged particle beam during the reflection process is also demonstrated.


2001 ◽  
Vol 16 (supp01c) ◽  
pp. 1150-1152
Author(s):  
D. Nikas ◽  
V. Castillo ◽  
L. Kowalski ◽  
R. Larsen ◽  
D. M. Lazarus ◽  
...  

We have made an observation of 45 MeV electron beam bunches using the nondestructive electro-optical (EO) technique. The amplitude of the EO modulation was found to increase linearly with electron beam charge and decrease inversely with the optical beam path distance from the electron beam. The risetime of the signal was bandwidth limited by our detection system to ~ 70 ps. An EO signal due to ionization caused by the electrons traversing the EO crystal was also observed. The EO technique may be ideal for the measurement of bunch structure with femtosecond resolution of relativistic charged particle beam bunches.


2009 ◽  
Vol 75 (6) ◽  
pp. 829-839 ◽  
Author(s):  
R. P. NUNES ◽  
F. B. RIZZATO

AbstractThis work presents a fully analytic way of determining relevant equilibrium quantities of a high-intensity charged particle beam submitted to magnetic focusing while inside a linear channel. Through the current approach, some intermediate steps of our original hybrid model which had to be solved numerically can now be eliminated, leading to the obtainment of a fully analytic expression. This expression relates the initial beam parameters with those at equilibrium, allowing beam macroscopic quantities such as envelope and emittance to be naturally and analytically determined. For validation, full self-consistent N-particle beam numerical simulations have been carried out and the results compared with the predictions supplied by the full analytical model. The agreement is shown to be good with the simulations and also with the original hybrid numerical-analytical version of the model.


2018 ◽  
Vol 9 ◽  
pp. 2855-2882 ◽  
Author(s):  
Philip D Prewett ◽  
Cornelis W Hagen ◽  
Claudia Lenk ◽  
Steve Lenk ◽  
Marcus Kaestner ◽  
...  

Following a brief historical summary of the way in which electron beam lithography developed out of the scanning electron microscope, three state-of-the-art charged-particle beam nanopatterning technologies are considered. All three have been the subject of a recently completed European Union Project entitled “Single Nanometre Manufacturing: Beyond CMOS”. Scanning helium ion beam lithography has the advantages of virtually zero proximity effect, nanoscale patterning capability and high sensitivity in combination with a novel fullerene resist based on the sub-nanometre C60 molecule. The shot noise-limited minimum linewidth achieved to date is 6 nm. The second technology, focused electron induced processing (FEBIP), uses a nozzle-dispensed precursor gas either to etch or to deposit patterns on the nanometre scale without the need for resist. The process has potential for high throughput enhancement using multiple electron beams and a system employing up to 196 beams is under development based on a commercial SEM platform. Among its potential applications is the manufacture of templates for nanoimprint lithography, NIL. This is also a target application for the third and final charged particle technology, viz. field emission electron scanning probe lithography, FE-eSPL. This has been developed out of scanning tunneling microscopy using lower-energy electrons (tens of electronvolts rather than the tens of kiloelectronvolts of the other techniques). It has the considerable advantage of being employed without the need for a vacuum system, in ambient air and is capable of sub-10 nm patterning using either developable resists or a self-developing mode applicable for many polymeric resists, which is preferred. Like FEBIP it is potentially capable of massive parallelization for applications requiring high throughput.


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