Change in the work function of a semiconductor in adsorption associated with the dipole moment of an adsorbate molecule

Author(s):  
Sh. M. Kogan ◽  
V. B. Sandomirskii
1984 ◽  
Vol 30 (12) ◽  
pp. 7317-7319 ◽  
Author(s):  
Yen C. Chen ◽  
J. E. Cunningham ◽  
C. P. Flynn
Keyword(s):  

1991 ◽  
Vol 80 (4) ◽  
pp. 591-600
Author(s):  
A.E. Mohammed ◽  
A.Y. Ghaly ◽  
O.M. Frege

1991 ◽  
Vol 13 (12) ◽  
pp. 1439-1447
Author(s):  
A. E. Mohammed ◽  
A. Y. Ghaly ◽  
O. M. Frege

2008 ◽  
Vol 19 (10) ◽  
pp. 1563-1579 ◽  
Author(s):  
N. ZARE DEHNAVI ◽  
M. PAYAMI

In this paper, we have studied theoretically the effects of gold adsorption on the Al (001) surface, using ab initio pseudo-potential method in the framework of the density functional theory. Having found the hollow sites at the Al (001) surface as the most preferred adsorption sites, we have investigated the effects of the Au adsorption with different coverages (Θ =0.11, 0.25, 0.50, 0.75, 1.00 ML) on the geometry, adsorption energy, surface dipole moment, and the work function of the Al (001) surface. The results show that even though the work function of the Au substrate increases with the Au coverage, the surface dipole moment decreases with the changes in coverage from Θ =0.11 to 0.25 ML. We have explained this behavior by analyzing the electronic and ionic charge distributions. Furthermore, by studying the diffusion of Au atoms into the substrate, we have shown that at room temperature the diffusion rate of Au atoms into the substrate is negligible but increasing the temperature to about 200°C the Au atoms significantly diffuse into the substrate, in agreement with the experiment.


2016 ◽  
Vol 18 (7) ◽  
pp. 5486-5490 ◽  
Author(s):  
Zhiyao Duan ◽  
Graeme Henkelman

Density functional theory calculations reveal that the work function of Au supported on MgO(001) is substantially reduced because of an interfacial dipole moment formed at the Au/MgO interface.


Author(s):  
H.H. Rotermund

Chemical reactions at a surface will in most cases show a measurable influence on the work function of the clean surface. This change of the work function δφ can be used to image the local distributions of the investigated reaction,.if one of the reacting partners is adsorbed at the surface in form of islands of sufficient size (Δ>0.2μm). These can than be visualized via a photoemission electron microscope (PEEM). Changes of φ as low as 2 meV give already a change in the total intensity of a PEEM picture. To achieve reasonable contrast for an image several 10 meV of δφ are needed. Dynamic processes as surface diffusion of CO or O on single crystal surfaces as well as reaction / diffusion fronts have been observed in real time and space.


Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.


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