Liquid epitaxy growth of InP layers

1985 ◽  
Vol 28 (7) ◽  
pp. 539-542
Author(s):  
L. F. Zakharenkov ◽  
I. A. Kuz'min ◽  
B. E. Samorukov ◽  
M. A. Sokolova
Keyword(s):  
Liquid Epitaxy

Growth of a solid AlxGa1as solution on gallium phosphide substrates by the liquid epitaxy method

1974 ◽  
Vol 17 (3) ◽  
pp. 421-422
Author(s):  
Yu. B. Bolkhovityanov ◽  
Kh. B. Zembatov
Keyword(s):  
Gallium Phosphide ◽  
Liquid Epitaxy

Nonequilibrium deep-center trapping in liquid epitaxy on gallium arsenide

1983 ◽  
Vol 26 (10) ◽  
pp. 889-898
Author(s):  
Yu. B. Bolkhovityanov ◽  
A. F. Kravchenko ◽  
S. I. Chikichev
Keyword(s):  
Gallium Arsenide ◽  
Deep Center ◽  
Liquid Epitaxy

Electroreflectance Spectra of AlxGa1−xAs Alloys

1971 ◽  
Vol 49 (10) ◽  
pp. 1335-1339 ◽  
Author(s):  
Orazio Berolo ◽  
John C. Woolley
Keyword(s):  
Room Temperature ◽  
Transition Energy ◽  
Transition Energies ◽  
Bowing Parameter ◽  
Band Transition ◽  
Liquid Epitaxy ◽  
Predicted Values ◽  
Experimental Values

Room temperature electroreflectance measurements have been made on samples of AlxGa1−xAs alloys, grown by liquid epitaxy. The variation of the different band transition energies, E0, E1, E2, etc. has been determined as a function of composition x. For each transition energy, the data have been fitted to the relation E = a + bx + cx2 and hence the bowing parameter c determined. These experimental values of c are compared with the predicted values of Van Vechten.

Occurrence of non-ohmic contacts to Gunn diodes by liquid epitaxy

1967 ◽  
Vol 10 (12) ◽  
pp. 1223-1224 ◽  
Author(s):  
Y. Nannichi ◽  
T. Mitsuhata ◽  
M. Takeuchi
Keyword(s):  
Ohmic Contacts ◽  
Gunn Diodes ◽  
Liquid Epitaxy
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