Kinetics and growth mechanism of gallium arsenide crystals in gas-phase epitaxy

1980 ◽  
Vol 23 (1) ◽  
pp. 13-24 ◽  
Author(s):  
L. G. Lavrent'eva
Keyword(s):  
Gallium Arsenide ◽  
Gas Phase ◽  
Growth Mechanism

A polycentric growth model of gallium arsenide epitaxial layers from the gas phase with simultaneous diffusion, adsorption and chemical reaction

1988 ◽  
Vol 53 (12) ◽  
pp. 2995-3013
Author(s):  
Emerich Erdös ◽  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Growth Rate ◽  
Gallium Arsenide ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Surface Reaction ◽  
Quantitative Description ◽  
The Other ◽  
Rate Equations ◽  
Impact Interaction ◽  
Partial Pressures

For a quantitative description of the epitaxial growth rate of gallium arsenide, two models are proposed including two rate controlling steps, namely the diffusion of components in the gas phase and the surface reaction. In the models considered, the surface reaction involves a reaction triple - or quadruple centre. In both models three mechanisms are considered which differ one from the other by different adsorption - and impact interaction of reacting particles. In every of the six cases, the pertinent rate equations were derived, and the models have been confronted with the experimentally found dependences of the growth rate on partial pressures of components in the feed. The results are discussed with regard to the plausibility of individual mechanisms and of both models, and also with respect to their applicability and the direction of further investigations.

An homogeneous growth model of gallium arsenide epitaxial layers from the gas phase

1989 ◽  
Vol 54 (11) ◽  
pp. 2933-2950
Author(s):  
Emerich Erdös ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Experimental Data ◽  
Gallium Arsenide ◽  
Kinetic Study ◽  
Gas Phase ◽  
Growth Model ◽  
Epitaxial Layers ◽  
Inhomogeneous Model ◽  
Homogeneous Models ◽  
Active Centres

This paper represents a continuation and ending of the kinetic study of the gallium arsenide formation, where a so-called inhomogeneous model is proposed and quantitatively formulated in five variants, in which two kinds of active centres appear. This model is compared both with the experimental data and with the previous sequence of homogeneous models.

ChemInform Abstract: Growth Mechanism of MoS2 Fullerene-Like Nanoparticles by Gas-Phase Synthesis.

ChemInform ◽  
2001 ◽  
Vol 32 (8) ◽  
pp. no-no
Author(s):  
A. Zak ◽  
Y. Feldman ◽  
V. Alperovich ◽  
R. Rosentsveig ◽  
R. Tenne
Keyword(s):  
Gas Phase ◽  
Growth Mechanism ◽  
Phase Synthesis ◽  
Gas Phase Synthesis

ChemInform Abstract: Layers of Gallium Arsenide Doped with Manganese by Epitaxy from the Gas Phase.

ChemInform ◽  
1989 ◽  
Vol 20 (18) ◽  
Author(s):  
M. D. VILISOVA ◽  
E. V. MALISOVA ◽  
G. M. IKONNIKOVA ◽  
L. M. KRASIL'NIKOVA ◽  
V. B. YABZHANOV ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Gas Phase

Growth of gallium arsenide in a GaAs-AsCl3-H2 gas-transport system. 2. Growth mechanism

1977 ◽  
Vol 20 (12) ◽  
pp. 1551-1555
Author(s):  
L. G. Lavrent'eva ◽  
I. V. Ivonin ◽  
L. P. Porokhovnichenko
Keyword(s):  
Gallium Arsenide ◽  
Transport System ◽  
Growth Mechanism ◽  
Gas Transport ◽  
System 2

Role of gas‐phase adducts in the growth of gallium arsenide by metalorganic vapor‐phase epitaxy

1993 ◽  
Vol 63 (2) ◽  
pp. 214-215 ◽  
Author(s):  
Douglas F. Foster ◽  
Christopher Glidewell ◽  
David J. Cole‐Hamilton
Keyword(s):  
Gallium Arsenide ◽  
Gas Phase ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Complexing of tellurium-doped gallium arsenide in gas-phase epitaxy

1985 ◽  
Vol 28 (2) ◽  
pp. 172-176
Author(s):  
I. A. Bobrovnikova ◽  
L. G. Lavrent'eva ◽  
S. E. Toropov
Keyword(s):  
Gallium Arsenide ◽  
Gas Phase
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