Characteristics of growth of complex ferroelectric oxide films by plasma-ion sputtering

1981 ◽  
Vol 24 (2) ◽  
pp. 102-106 ◽  
Author(s):  
V. M. Mukhortov ◽  
Yu. I. Golovko ◽  
Vl. M. Mukhortov ◽  
V. P. Dudkevich
Keyword(s):  
Oxide Films ◽  
Ion Sputtering ◽  
Ferroelectric Oxide

Electrical and optical properties of a kind of ferroelectric oxide films comprising of PbZr0.4Ti0.6O3 stacks

2017 ◽  
Vol 122 (2) ◽  
pp. 024102
Author(s):  
Shimin Li ◽  
Guohong Ma ◽  
Chao Wang ◽  
Wenchao Zhao ◽  
Xiaoshuang Chen ◽  
...  
Keyword(s):  
Optical Properties ◽  
Oxide Films ◽  
Electrical And Optical Properties ◽  
Ferroelectric Oxide

Crystal Ion-Slicing of Magnetic and Ferroelectric Oxide Films

1998 ◽  
Vol 517 ◽  
Author(s):  
M. Levy ◽  
R.M. Osgood ◽  
A. Kumar ◽  
H. Bakhru ◽  
R. Liu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Single Crystal ◽  
Sacrificial Layer ◽  
Oxide Films ◽  
High Quality ◽  
Damage Layer ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Ferroelectric Oxide

AbstractThe epitaxial separation of single-crystal magnetic and ferroelectric oxide films is presented. Ion implantation is used to create a buried damage layer beneath the surface. The high etch-selectivity of this sacrificial layer makes it possible to detach high quality single-crystal films from bulk samples. Magnetic and electrical properties of the films are discussed.

scholarly journals Topological polar structures in ferroelectric oxide films

2021 ◽  
Vol 129 (20) ◽  
pp. 200904
Author(s):  
Y. L. Tang ◽  
Y. L. Zhu ◽  
X. L. Ma
Keyword(s):  
Oxide Films ◽  
Ferroelectric Oxide

Preparation of Ferroelectric Oxide Films by Sol-Gel Method

1999 ◽  
pp. 279-284 ◽  
Author(s):  
Vladimir N. Fuflyigin ◽  
Kewin K. Li ◽  
Feiling Wang ◽  
Hua Jiang ◽  
Shiwen Liu ◽  
...  
Keyword(s):  
Sol Gel ◽  
Oxide Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Ferroelectric Oxide

Growth of ferroelectric oxide films on n-GaN/c-sapphire structures

2000 ◽  
Vol 76 (12) ◽  
pp. 1612-1614 ◽  
Author(s):  
V. Fuflyigin ◽  
A. Osinsky ◽  
F. Wang ◽  
P. Vakhutinsky ◽  
P. Norris
Keyword(s):  
Oxide Films ◽  
Ferroelectric Oxide

Resolving Crystallites in Zirconium Oxide Films

1969 ◽  
Vol 27 ◽  
pp. 140-141
Author(s):  
R.A. Ploc
Keyword(s):  
Electron Microscope ◽  
Inelastic Scattering ◽  
Zirconium Oxide ◽  
Oxide Films ◽  
Optic Axis ◽  
Objective Lens ◽  
Microscope Objective ◽  
Linear Optic ◽  
A Current ◽  
Microscope Objective Lens

The optic axis of an electron microscope objective lens is usually assumed to be straight and co-linear with the mechanical center. No reason exists to assume such perfection and, indeed, simple reasoning suggests that it is a complicated curve. A current centered objective lens with a non-linear optic axis when used in conjunction with other lenses, leads to serious image errors if the nature of the specimen is such as to produce intense inelastic scattering.

Analysis of Sputtered Zinc Oxide Films

1980 ◽  
Vol 38 ◽  
pp. 416-417
Author(s):  
T. A. Emma ◽  
M. P. Singh
Keyword(s):  
Electron Microscopy ◽  
Zinc Oxide ◽  
Piezoelectric Materials ◽  
Oxide Films ◽  
Optical Quality ◽  
Zno Films ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Sputtered Films ◽  
Zinc Oxide Films

Optical quality zinc oxide films have been characterized using reflection electron diffraction (RED), replication electron microscopy (REM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). Significant microstructural differences were observed between rf sputtered films and planar magnetron rf sputtered films. Piezoelectric materials have been attractive for applications to integrated optics since they provide an active medium for signal processing. Among the desirable physical characteristics of sputtered ZnO films used for this and related applications are a highly preferred crystallographic texture and relatively smooth surfaces. It has been found that these characteristics are very sensitive to the type and condition of the substrate and to the several sputtering parameters: target, rf power, gas composition and substrate temperature.

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