Physical properties of group IV transition-metal silicides

1975 ◽  
Vol 18 (9) ◽  
pp. 1276-1280 ◽  
Author(s):  
G. V. Samsonov ◽  
N. F. Podgrushko ◽  
M. I. Lesnaya ◽  
L. A. Dvorina ◽  
N. F. Selivanova
Keyword(s):  
Transition Metal ◽  
Physical Properties ◽  
Group Iv ◽  
Metal Silicides

scholarly journals Colloquium : Physical properties of group-IV monochalcogenide monolayers

2021 ◽  
Vol 93 (1) ◽  
Author(s):  
Salvador Barraza-Lopez ◽  
Benjamin M. Fregoso ◽  
John W. Villanova ◽  
Stuart S. P. Parkin ◽  
Kai Chang
Keyword(s):  
Physical Properties ◽  
Group Iv

Tri-1-methallyl- and 1-methallyl-butadiene group IV transition metal complexes

1981 ◽  
Vol 218 (3) ◽  
pp. 383-393 ◽  
Author(s):  
J. Blenkers ◽  
H.J. de Liefde Meijer ◽  
J.H. Teuben
Keyword(s):  
Transition Metal ◽  
Metal Complexes ◽  
Transition Metal Complexes ◽  
Group Iv

Theoretical Study of Si-Rich Transition-Metal Silicides with Double-Graphene-Like Structures

2006 ◽  
Vol 958 ◽  
Author(s):  
Takehide Miyazaki ◽  
Toshihiko Kanayama
Keyword(s):  
Transition Metal ◽  
Theoretical Study ◽  
Layer Structure ◽  
Geometry Optimization ◽  
Energy Calculation ◽  
Total Energy Calculation ◽  
Metal Atoms ◽  
Transition Metal Atoms ◽  
Metal Silicides ◽  
Potential Impact

ABSTRACTWe propose a novel form of graphene-like Si nanostructure based on ab initio total-energy calculation and geometry optimization, (MSi12)n, with M being transition metal atom. It has a three-layer structure, where the two layers of Si atoms in graphene-like positions sandwich another layer of transition metal atoms. The electronic structure may become semiconducting or metallic, depending on the choice of M and arrangement of Si atoms. This hypothetical material can be regarded as a Si-rich phase of transition metal silicide. A potential impact of our finding in forthcoming ultra-scaled Si technology is also discussed.

Optical constants of transition-metal silicides

1983 ◽  
Vol 2 (1) ◽  
pp. 31-34 ◽  
Author(s):  
P.A. Heimann ◽  
S.P. Murarka ◽  
J. Rosario
Keyword(s):  
Transition Metal ◽  
Optical Constants ◽  
Metal Silicides

Defect Control and Defect Engineering of Transition-metal Silicides

2006 ◽  
Vol 980 ◽  
Author(s):  
Haruyuki Inui ◽  
Katsushi Tanaka ◽  
Kyosuke Kishida
Keyword(s):  
Transition Metal ◽  
Thermoelectric Properties ◽  
Valence Electron ◽  
Vacancy Concentration ◽  
Relative Magnitude ◽  
Defect Engineering ◽  
Counting Rule ◽  
Substitutional Element ◽  
Metal Silicides ◽  
Defect Control

AbstractThe microstructure, defect structure and thermoelectric properties of two different semiconducting transition-metal silicides, ReSi1.75 and Ru2Si3 upon alloying with a substitutional element with a valence electron number different from that of the constituent metal have been investigated in order to see if the crystal and defect structures of these silicides and thereby their physical properties can be controlled through defect engineering according to the valence electron counting rule. The Si vacancy concentration and its arrangement can be successfully controlled in ReSi1.75 while the relative magnitude of the metal and silicon subcell dimensions in the chimney-ladder structures can be successfully controlled in Ru2Si3. As a result, the improvement in the thermoelectric properties and the p- to n-type conduction transition are successfully achieved respectively for these semiconducting transition-metal silicides.

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