Effect of shortwave illumination on the properties of a metal-anode oxide film-indium antimonide structure

An anodic oxide film is formed on aluminum in an acidic elecrolyte during anodizing. The structure of the oxide film was observed directly by carbon replica method(l) and ultra-thin sectioning method(2). The oxide film consists of barrier layer and porous layer constructed with fine hexagonal cellular structure. The diameter of micro pores and the thickness of barrier layer depend on the applying voltage and electrolyte. Because the dimension of the pore corresponds to that of colloidal particles, many metals deposit in the pores. When the oxide film is treated as anode in emulsion of polyelectrolyte, the emulsion particles migrate onto the film and deposit on it. We investigated the behavior of the emulsion particles during electrodeposition.Aluminum foils (99.3%) were anodized in either 0.25M oxalic acid solution at 30°C or 3M sulfuric acid solution at 20°C. After washing with distilled water, the oxide films used as anode were coated with emulsion particles by applying voltage of 200V and then they were cured at 190°C for 30 minutes.

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The nature of the oxide film formed on stainless steel immersed in concentrated hydrogen peroxide (H.T.P.)

Journal of Biochemical Toxicology ◽

10.1002/jbt.2570101205 ◽

1960 ◽

Vol 10 (12) ◽

pp. 497-505

Author(s):

J. Diederichsen

Keyword(s):

Hydrogen Peroxide ◽

Stainless Steel ◽

Oxide Film

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Matrices of indium antimonide nanowires and their applications

Infocommunications and Radio Technologies ◽

10.15826/icrt.2018.01.1.06 ◽

2018 ◽

Vol 1 (1) ◽

pp. 78-94

Author(s):

I. A. Obukhov ◽

◽

G. G. Gorokh ◽

A. A. Lozovenko ◽

E. A. Smirnova ◽

...

Keyword(s):

Indium Antimonide

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Surface Microstructure Evolution Upon Silicidation of Ni(Pt) and the Different Responses to Metal Etch

ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2013p0138 ◽

2013 ◽

Author(s):

Wentao Qin ◽

Dorai Iyer ◽

Jim Morgan ◽

Carroll Casteel ◽

Robert Watkins ◽

...

Keyword(s):

Thin Film ◽

Oxide Film ◽

Microstructure Evolution ◽

Depth Profiling ◽

Surface Microstructure ◽

The Difference ◽

Surface Microstructures ◽

Pt Films

Abstract Ni(5 at.%Pt ) films were silicided at a temperature below 400 °C and at 550 °C. The two silicidation temperatures had produced different responses to the subsequent metal etch. Catastrophic removal of the silicide was seen with the low silicidation temperature, while the desired etch selectivity was achieved with the high silicidation temperature. The surface microstructures developed were characterized with TEM and Auger depth profiling. The data correlate with both silicidation temperatures and ultimately the difference in the response to the metal etch. With the high silicidation temperature, there existed a thin Si-oxide film that was close to the surface and embedded with particles which contain metals. This thin film is expected to contribute significantly to the desired etch selectivity. The formation of this layer is interpreted thermodynamically.

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