Growth kinetics of epitaxial layers of gallium phosphide by temperature-gradient zone recrystallization

1974 ◽  
Vol 17 (7) ◽  
pp. 1002-1005
Author(s):  
V. N. Lozovskii ◽  
V. B. Mar'ev
Keyword(s):  
Temperature Gradient ◽  
Growth Kinetics ◽  
Gallium Phosphide ◽  
Epitaxial Layers ◽  
Gradient Zone ◽  
Zone Recrystallization ◽  
Kinetics Of

Study of Properties of Multicomponent Heterostructures Based on AIIIBV Compounds

2017 ◽  
Vol 265 ◽  
pp. 728-733 ◽  
Author(s):  
M.L. Lunina ◽  
A.E. Kazakova ◽  
D.A. Arustamyan
Keyword(s):  
Temperature Gradient ◽  
Complex Analysis ◽  
Lattice Parameters ◽  
Epitaxial Layers ◽  
Structural Perfection ◽  
Gradient Zone ◽  
Substrate Orientation ◽  
Zone Recrystallization

Complex analysis of the quality of the surface of the multicomponent epitaxial layers AIIIBV compounds grown at the different conditions of temperature gradient zone recrystallization was performed. Main parameters that determine the quality of the surface and structural perfection of multicomponent heterostructures AlInGaPAs / GaAs have been found: the temperature gradient, the composition of the solution-melt, subcooling, matching the lattice parameters and the CTE of the layer and the substrate, the substrate orientation.

The kinetics of liquid-phase epitaxy of moving-temperature-gradient zone refining

1977 ◽  
Vol 20 (3) ◽  
pp. 354-358
Author(s):  
V. N. Lozovskii ◽  
V. P. Popov ◽  
I. P. Papkov
Keyword(s):  
Liquid Phase ◽  
Temperature Gradient ◽  
Liquid Phase Epitaxy ◽  
Zone Refining ◽  
Gradient Zone ◽  
Kinetics Of

scholarly journals Варизонные гетероструктуры Al-=SUB=-x-=/SUB=-In-=SUB=-y-=/SUB=-Ga-=SUB=-1-x-y-=/SUB=-P-=SUB=-z-=/SUB=-As-=SUB=-1-z-=/SUB=-/GaAs для фотоэлектрических преобразователей

2021 ◽  
Vol 47 (20) ◽  
pp. 27
Author(s):  
Л.С. Лунин ◽  
М.Л. Лунина ◽  
Д.Л. Алфимова ◽  
А.С. Пащенко ◽  
Н.А. Яковенко ◽  
...  
Keyword(s):  
Temperature Gradient ◽  
Band Gap ◽  
Solid Solutions ◽  
Energy Band ◽  
Maximum Energy ◽  
Energy Band Gap ◽  
Technological Parameters ◽  
Gradient Zone ◽  
Liquid Zone ◽  
Zone Recrystallization

The AlxInyGa1-x-yPzAs1-z/GaAs graded-gap heterostructures were grown by the temperature gradient zone recrystallization with a liquid zone reciprocating, where energy band gap varied from 1.43 to 2.2 eV. The influence of technological parameters on the varying in the energy band gap of the grown AlxInyGa1-x-yPzAs1-z/GaAs solid solutions is investigated. In the p-AlxInyGa1-x-yPzAs1-z/n-GaAs heterostructure, the maximum energy band gap gradient of 10490 eV/cm is reached, and an increase in the external quantum efficiency is shown in the wavelength range of 500-900 nm.

The growth kinetics of (SmY)3(FeGa)5O12 epitaxial layers in the 920–980°C range

1977 ◽  
Vol 40 (2) ◽  
pp. 271-278 ◽  
Author(s):  
L. De Brouckere ◽  
W. Nuyts ◽  
R. Vlaeminck ◽  
J. Vennik
Keyword(s):  
Growth Kinetics ◽  
Epitaxial Layers ◽  
Kinetics Of
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